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Memory Stock
| PART NO. | BRAND | D/C | QTY | DESCRIPTION |
|---|---|---|---|---|
| HLMP-EG17-QT002 | AGILENT | 33 | 6,50 | LEDS / HLMP-EG17 / Leaded |
| AS4C256K16E0-50TC | ALLIANCE-MEMORY | 44 | 4,27 | DRAM / 256KX16 EDO / TSOP2(40/44) / 50 NS / 0°C~+70°C / Leaded / 5.0 V / TRAY / 1350 PCS |
| AS4C256K16E0-50TC | ALLIANCE-MEMORY | 43 | 2,03 | DRAM / 256KX16 EDO / TSOP2(40/44) / 50 NS / 0°C~+70°C / Leaded / 5.0 V / TRAY / 1350 PCS |
| XA6SLX9-2FTG256Q0100 | AMD XILINX/赛灵思 | 21 | 4,00 | FPGA / 6SLX9 / Spartan-6 Family 9152 Cells 45nm (CMOS) Technology / FBGA-256 / 1080 MHz / -40°C~+125°C / RoHS / 1.14V~1.26 / TAPE ON REEL / 1000 PCS |
| AM186ES-40KC/W | AMD/超微 | 235 | 3,30 | MICROPROCESSOR / 80C186 / 16-bit Embedded Microcontrollers / PQFP-100 / 40 MHZ / 0°C~+100°C / Leaded / 3.0V~3.6V / TRAY / 330 PCS |
| AM186ES-40KC/W | AMD/超微 | 212 | 3,30 | MICROPROCESSOR / 80C186 / 16-bit Embedded Microcontrollers / PQFP-100 / 40 MHZ / 0°C~+100°C / Leaded / 3.0V~3.6V / TRAY / 330 PCS |
| AM186ES-40KC/W | AMD/超微 | 210 | 2,97 | MICROPROCESSOR / 80C186 / 16-bit Embedded Microcontrollers / PQFP-100 / 40 MHZ / 0°C~+100°C / Leaded / 3.0V~3.6V / TRAY / 330 PCS |
| AM28F010-150JC | AMD/超微 | 9.921 | 17,25 | FLASH-NOR / 28F010 / 30PCS/TUBE / PLCC-32 / 150 NS / 0°C~+85°C / Leaded / 12.0 V / TUBE / EOL / 240 PCS |
| A29040BL-55UF | AMIC/聯笙 | 1.325 | 3,24 | FLASH-NOR / 29F040 / PLCC-32 / 55 NS / -40°C~+85°C / RoHS / 5.0 V / TUBE / EOL / 3000 PCS 5.5 KG 10*10-59 CM |
| A428316V-35F | AMIC/聯笙 | 550 | 10,80 | DRAM / 256KX16 EDO / TSOP2(40/44) / 35 NS / 0°C~+70°C / RoHS / 5.0 V / TRAY / 1350 PCS 2.0 KG 37*16*9 CM |
| MAX811LEUS+T | ANALOG DEVICES/ADI/亞德諾 | 1.912 | 40,00 | VOLTAGE MONITORS / MAX811 / SOT-143-4 / 560 ms / -40°C~+85°C / RoHS / 4.63 V / TAPE ON REEL / 2500 PCS |
| 9861577-001 | AVX | 38 | 4,00 | OTHER / 9861577 / Leaded |
| 08055A100KAT2A | AVX | 33 | 4,00 | CAPACITOR / 08055A100 / Leaded / TAPE ON REEL / 4000 PCS |
| SR215E104MA5001 | AVX | 9.408 | 3,00 | CAPACITOR / 215E104 / Leaded |
| 12065E104ZAT2A | AVX | 9.940 | 12,00 | CAPACITOR / 12065E104 / Leaded / TAPE ON REEL / 4000 PCS |
| SR215C104MA0001 | AVX | 9.743 | 8,00 | CAPACITOR / 215C104 / Leaded / OTHER / 1000 PCS |
| SR215C104MA0001 | AVX | 9.744 | 5,00 | CAPACITOR / 215C104 / Leaded / OTHER / 1000 PCS |
| SR215C104MA0001 | AVX | 9.751 | 12,00 | CAPACITOR / 215C104 / Leaded / OTHER / 1000 PCS |
| SD12H0SK | C&K | 20 | 4,78 | SWITCH / 12H0 / DIP / -45°C~+85°C / Leaded / TUBE / EOL / 15 PCS |
| MLRD16ZU103M101RR | CAPATRONICS | 9.406 | 2,50 | CAPACITOR / 16ZU103 / Leaded |
| 2817387880 | DELTA/台達 | 448 | 2,75 | OTHER / LF8151 / Leaded / TAPE ON REEL / 250 PCS |
| 851-0008-001 | DELTA/台達 | 448 | 2,75 | OTHER / LF8151 / Leaded / TAPE ON REEL / 250 PCS |
| SM4004 | DIOTEC | 1.942 | 100,00 | DIODE / SM4004 / DO-213AB / 1 A / -55°C~+175°C / RoHS / 400 V / TAPE ON REEL / 5000 PCS |
| SM4004 | DIOTEC | 1.942 | 10,00 | DIODE / SM4004 / DO-213AB / 1 A / -55°C~+175°C / RoHS / 400 V / TAPE ON REEL / 5000 PCS |
| EC2SM-15.000MTR | ECLIPTEK | 32 | 12,00 | CRYSTAL / EC2SM / HC49-UP / Leaded / TAPE ON REEL / 1000 PCS |
| M12L16161A-7BG2F | ESMT/EMP/晶豪 | 929 | 5,72 | SDRAM / 1MX16 SD / FBGA-60 / 143 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY / 2860 PCS |
| M11B416256A-25JP | ESMT/EMP/晶豪 | 901 | 13,00 | DRAM / 256KX16 EDO / SOJ-40 / 25 NS / 0°C~+85°C / RoHS / 5.0 V / TAPE ON REEL / EOL / 1000 PCS 2.86 KG 37*35*8 CM |
| M13S128168A-5TG | ESMT/EMP/晶豪 | 803 | 36,72 | DDR1 SDRAM / 8MX16 DDR1 / TSOP2(66) / 200 MHZ / 0°C~+85°C / RoHS / 2.5 V / TRAY / 1080 PCS 2.1 KG 36*16*9 CM |
| M13S128168A-5TG | ESMT/EMP/晶豪 | 802 | 6,48 | DDR1 SDRAM / 8MX16 DDR1 / TSOP2(66) / 200 MHZ / 0°C~+85°C / RoHS / 2.5 V / TRAY / 1080 PCS 2.1 KG 36*16*9 CM |
| M13S128168A-5TG | ESMT/EMP/晶豪 | 751 | 9,72 | DDR1 SDRAM / 8MX16 DDR1 / TSOP2(66) / 200 MHZ / 0°C~+85°C / RoHS / 2.5 V / TRAY / 1080 PCS 2.1 KG 36*16*9 CM |
| M13S128168A-5TG | ESMT/EMP/晶豪 | 750 | 3,24 | DDR1 SDRAM / 8MX16 DDR1 / TSOP2(66) / 200 MHZ / 0°C~+85°C / RoHS / 2.5 V / TRAY / 1080 PCS 2.1 KG 36*16*9 CM |
| M13S128168A-5TG | ESMT/EMP/晶豪 | 740 | 9,72 | DDR1 SDRAM / 8MX16 DDR1 / TSOP2(66) / 200 MHZ / 0°C~+85°C / RoHS / 2.5 V / TRAY / 1080 PCS 2.1 KG 36*16*9 CM |
| M13S128168A-5TG | ESMT/EMP/晶豪 | 739 | 16,20 | DDR1 SDRAM / 8MX16 DDR1 / TSOP2(66) / 200 MHZ / 0°C~+85°C / RoHS / 2.5 V / TRAY / 1080 PCS 2.1 KG 36*16*9 CM |
| RF1S740SM9AS | HARRIS | 9.827 | 4,80 | OTHER / 1S740 / Leaded |
| RF1S740SM9AS | HARRIS | 9.819 | 5,60 | OTHER / 1S740 / Leaded |
| RF1S740SM9AS | HARRIS | 9.823 | 12,80 | OTHER / 1S740 / Leaded |
| RF1S740SM9AS | HARRIS | 9.819 | 9,60 | OTHER / 1S740 / Leaded |
| BFP420H6327 | INFINEON+CYPRESS/英飞凌 | 2.124 | 9,00 | TRANSISTOR / BFP420 / SOT-343-4 / 25 GHz / -65°C~+150°C / RoHS / 5.0 V / TAPE ON REEL / 3000 PCS |
| BC807-16W | INFINEON+CYPRESS/英飞凌 | 1.124 | 3,00 | TRANSISTOR / BC807 / SC-70 3PIN / RoHS / TAPE ON REEL / 3000 PCS |
| AM29LV400BB-70ED | INFINEON+CYPRESS/英飞凌 | 623 | 6,72 | FLASH-NOR / 29LV400 BOTTOM / TSOP-48 / 70 NS / 0°C~+70°C / RoHS / 3.3 V / TRAY / 960 PCS 2.31 KG 40*19*12 CM |
| AM29LV400BB-90ED | INFINEON+CYPRESS/英飞凌 | 617 | 9,12 | FLASH-NOR / 29LV400 BOTTOM / TSOP-48 / 90 NS / 0°C~+70°C / RoHS / 3.3 V / TRAY / 960 PCS 2.31 KG 40*19*12 CM |
| AM29LV800DB-70WBF | INFINEON+CYPRESS/英飞凌 | 604 | 2,80 | FLASH-NOR / 29LV800 BOTTOM / 6*9mm,0.8mm pitch / FBGA-48 / 70 NS / -40°C~+85°C / RoHS / 3.3 V / TRAY |
| PEF22822FV2.2 | INFINEON+CYPRESS/英飞凌 | 514 | 2,16 | TELECOM CHIP / PEF22822 / TQFP-144 / RoHS / TRAY / 60 PCS 0.0 KG 38*15,5*3,5 CM |
| PEB22811HV1.3 | INFINEON+CYPRESS/英飞凌 | 514 | 12,10 | TELECOM CHIP / PEB22811 / MQFP-64 / Leaded / TRAY / 504 PCS 1.0 KG 38*18*10 CM |
| PEF22822FV2.2 | INFINEON+CYPRESS/英飞凌 | 512 | 3,72 | TELECOM CHIP / PEF22822 / TQFP-144 / RoHS / TRAY / 60 PCS 0.0 KG 38*15,5*3,5 CM |
| PEF22810TV2.1 | INFINEON+CYPRESS/英飞凌 | 501 | 3,20 | TELECOM CHIP / PEB22810 / SOIC-8 / Leaded / TUBE / 1000 PCS 0.7 KG 58*14*7 CM |
| PEF22810TV2.1 | INFINEON+CYPRESS/英飞凌 | 450 | 16,40 | TELECOM CHIP / PEB22810 / SOIC-8 / Leaded / TUBE / 1000 PCS 0.7 KG 58*14*7 CM |
| MBM29QM96DF-65PBT | INFINEON+CYPRESS/英飞凌 | 401 | 6,13 | FLASH-NOR / 29QM96 / BGA / Leaded / TRAY / 2100 PCS 0.9 KG 16X8X36 CM |
| MBM29DL163BD-90PBT | INFINEON+CYPRESS/英飞凌 | 46 | 13,91 | FLASH-NOR / 29DL163 BOTTOM / BGA / Leaded / TRAY |
| AM29LV800BB-70EI | INFINEON+CYPRESS/英飞凌 | 44 | 9,12 | FLASH-NOR / 29LV800 BOTTOM / TSOP-48 / 70 NS / -40°C~+85°C / Leaded / 3.3 V / TRAY / 480 PCS |
| AM29LV800BB-70EI | INFINEON+CYPRESS/英飞凌 | 44 | 2,40 | FLASH-NOR / 29LV800 BOTTOM / TSOP-48 / 70 NS / -40°C~+85°C / Leaded / 3.3 V / TRAY / 480 PCS |
| CY2081SL-638T | INFINEON+CYPRESS/英飞凌 | 27 | 5,00 | CLOCK CIRCUITS / CY2081 / Leaded |
| AM29F002BT-90EC | INFINEON+CYPRESS/英飞凌 | 0 | 35,88 | FLASH-NOR / 29F002 TOP / TSOP-32 / 90 NS / 0°C~+70°C / Leaded / 5.0 V / TRAY / 780 PCS |
| CY2292F | INFINEON+CYPRESS/英飞凌 | 0 | 2,50 | CLOCK CIRCUITS / CY2292 / SOIC / Leaded / TAPE ON REEL / 2500 PCS |
| HYB314400BJ-60 | INFINEON+CYPRESS/英飞凌 | 9.842 | 17,48 | DRAM / 1MX4 FP / SOJ-20/26 / 60 NS / 0°C~+70°C / Leaded / TAPE ON REEL / 1500 PCS 1.99 KG 35*35*4 CM |
| HYB314400BJ-60 | INFINEON+CYPRESS/英飞凌 | 9.840 | 3,00 | DRAM / 1MX4 FP / SOJ-20/26 / 60 NS / 0°C~+70°C / Leaded / TAPE ON REEL / 1500 PCS 1.99 KG 35*35*4 CM |
| HYB314400BJ-60 | INFINEON+CYPRESS/英飞凌 | 9.844 | 6,00 | DRAM / 1MX4 FP / SOJ-20/26 / 60 NS / 0°C~+70°C / Leaded / TAPE ON REEL / 1500 PCS 1.99 KG 35*35*4 CM |
| AM29DL163CT-90EI | INFINEON+CYPRESS/英飞凌 | 9.922 | 4,80 | FLASH-NOR / 29DL163 TOP / TSOP-48 / 90 NS / -40°C~+85°C / Leaded / 3.0v / TRAY / 480 PCS |
| IS62WV2568BLL-55TLI-TR | ISSI/矽成 | 2.412 | 18,00 | SRAM-ASYNC / 256KX8 SRAM / L : 超低功耗 (Low-Power) / TSOP-32 / 55 NS / -40°C~+85°C / RoHS / 1.65v-3.6v / TAPE ON REEL / 1500 PCS 1.5 KG 36*34*6 CM |
| IS62WV2568BLL-55TLI-TR | ISSI/矽成 | 2.340 | 2,22 | SRAM-ASYNC / 256KX8 SRAM / L : 超低功耗 (Low-Power) / TSOP-32 / 55 NS / -40°C~+85°C / RoHS / 1.65v-3.6v / TAPE ON REEL / 1500 PCS 1.5 KG 36*34*6 CM |
| IS62WV2568BLL-55TLI-TR | ISSI/矽成 | 2.332 | 11,27 | SRAM-ASYNC / 256KX8 SRAM / L : 超低功耗 (Low-Power) / TSOP-32 / 55 NS / -40°C~+85°C / RoHS / 1.65v-3.6v / TAPE ON REEL / 1500 PCS 1.5 KG 36*34*6 CM |
| IS62WV2568BLL-55TLI-TR | ISSI/矽成 | 2.329 | 4,51 | SRAM-ASYNC / 256KX8 SRAM / L : 超低功耗 (Low-Power) / TSOP-32 / 55 NS / -40°C~+85°C / RoHS / 1.65v-3.6v / TAPE ON REEL / 1500 PCS 1.5 KG 36*34*6 CM |
| IS42S32400F-7BLI | ISSI/矽成 | 2.218 | 2,40 | SDRAM / 4MX32 SD / FBGA-90 / 143 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY / 2400 PCS 2.0 KG 37*16*9 CM |
| IS25LP064D-JBLE-TR | ISSI/矽成 | 2.214 | 6,00 | FLASH-SPI / 64MB SPI / B = 8-PIN SOIC 208MIL / SOIC-8 / 133 MHZ / -40°C~+105°C / RoHS / 2.3v-3.6v / TAPE ON REEL / 2000 PCS |
| IS43LR16160H-5BLI | ISSI/矽成 | 2.135 | 3,00 | LPDDR1 MOBILE / 16MX16 LPDDR1 / FBGA-60 / 200 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS43LR16160H-5BLI | ISSI/矽成 | 2.135 | 3,00 | LPDDR1 MOBILE / 16MX16 LPDDR1 / FBGA-60 / 200 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS43LR16160H-5BLI | ISSI/矽成 | 2.135 | 3,00 | LPDDR1 MOBILE / 16MX16 LPDDR1 / FBGA-60 / 200 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS43LR16160H-5BLI | ISSI/矽成 | 2.135 | 3,00 | LPDDR1 MOBILE / 16MX16 LPDDR1 / FBGA-60 / 200 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS43LR16160H-5BLI | ISSI/矽成 | 2.135 | 3,00 | LPDDR1 MOBILE / 16MX16 LPDDR1 / FBGA-60 / 200 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS43LR16160H-5BLI | ISSI/矽成 | 2.135 | 3,00 | LPDDR1 MOBILE / 16MX16 LPDDR1 / FBGA-60 / 200 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS43LR16160H-5BLI | ISSI/矽成 | 2.135 | 3,00 | LPDDR1 MOBILE / 16MX16 LPDDR1 / FBGA-60 / 200 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS43LR16160H-5BLI | ISSI/矽成 | 2.135 | 2,18 | LPDDR1 MOBILE / 16MX16 LPDDR1 / FBGA-60 / 200 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IC43DR16320D-25DBL | ISSI/矽成 | 2.128 | 2,09 | DDR2 SDRAM / 32MX16 DDR2 / K087, 512MB DDR2 / FBGA-84 / 800 Mbps / 0°C~+85°C / RoHS / 1.8 V / TRAY / EOL |
| IC43DR16320D-25DBL | ISSI/矽成 | 2.128 | 2,09 | DDR2 SDRAM / 32MX16 DDR2 / K087, 512MB DDR2 / FBGA-84 / 800 Mbps / 0°C~+85°C / RoHS / 1.8 V / TRAY / EOL |
| IC43DR16320D-25DBL | ISSI/矽成 | 2.128 | 2,09 | DDR2 SDRAM / 32MX16 DDR2 / K087, 512MB DDR2 / FBGA-84 / 800 Mbps / 0°C~+85°C / RoHS / 1.8 V / TRAY / EOL |
| IC43DR16320D-25DBL | ISSI/矽成 | 2.128 | 2,09 | DDR2 SDRAM / 32MX16 DDR2 / K087, 512MB DDR2 / FBGA-84 / 800 Mbps / 0°C~+85°C / RoHS / 1.8 V / TRAY / EOL |
| IC43DR16320D-25DBL | ISSI/矽成 | 2.128 | 2,09 | DDR2 SDRAM / 32MX16 DDR2 / K087, 512MB DDR2 / FBGA-84 / 800 Mbps / 0°C~+85°C / RoHS / 1.8 V / TRAY / EOL |
| IC43DR16320D-25DBL | ISSI/矽成 | 2.128 | 2,09 | DDR2 SDRAM / 32MX16 DDR2 / K087, 512MB DDR2 / FBGA-84 / 800 Mbps / 0°C~+85°C / RoHS / 1.8 V / TRAY / EOL |
| IC43DR16320D-25DBL | ISSI/矽成 | 2.128 | 2,09 | DDR2 SDRAM / 32MX16 DDR2 / K087, 512MB DDR2 / FBGA-84 / 800 Mbps / 0°C~+85°C / RoHS / 1.8 V / TRAY / EOL |
| IC43DR16320D-25DBL | ISSI/矽成 | 2.128 | 2,09 | DDR2 SDRAM / 32MX16 DDR2 / K087, 512MB DDR2 / FBGA-84 / 800 Mbps / 0°C~+85°C / RoHS / 1.8 V / TRAY / EOL |
| IC43DR16320D-25DBL | ISSI/矽成 | 2.128 | 2,05 | DDR2 SDRAM / 32MX16 DDR2 / K087, 512MB DDR2 / FBGA-84 / 800 Mbps / 0°C~+85°C / RoHS / 1.8 V / TRAY / EOL |
| IS43LR32320B-5BLI | ISSI/矽成 | 2.123 | 2,40 | LPDDR1 MOBILE / 32MX32 LPDDR1 / FBGA-90 / 200 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS43LR32320B-5BLI | ISSI/矽成 | 2.123 | 2,40 | LPDDR1 MOBILE / 32MX32 LPDDR1 / FBGA-90 / 200 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS43LR32320B-5BLI | ISSI/矽成 | 2.123 | 2,40 | LPDDR1 MOBILE / 32MX32 LPDDR1 / FBGA-90 / 200 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS43LR32320B-5BLI | ISSI/矽成 | 2.123 | 2,40 | LPDDR1 MOBILE / 32MX32 LPDDR1 / FBGA-90 / 200 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS43LR16400C-6BL | ISSI/矽成 | 2.039 | 2,02 | LPDDR1 MOBILE / 4MX16 LPDDR1 / FBGA-60 / 166 MHZ / 0°C~+85°C / RoHS / 1.8 V / TRAY |
| IS43TR16640A-15GBL | ISSI/矽成 | 2.038 | 5,47 | DDR3 SDRAM / 64MX16 DDR3 / 96-ball FBGA (9mm x 13mm) / FBGA-96 / 1333 Mbps / 0°C~+85°C / RoHS / 1.5 V / TRAY / EOL / 1900 PCS |
| IS42SM32100D-6BLI | ISSI/矽成 | 2.028 | 2,40 | SDRAM MOBILE / 1MX32 SD / FBGA-90 / 166 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY |
| IS42SM32100D-6BLI | ISSI/矽成 | 2.028 | 2,40 | SDRAM MOBILE / 1MX32 SD / FBGA-90 / 166 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY |
| IS42SM32100D-6BLI | ISSI/矽成 | 2.028 | 2,40 | SDRAM MOBILE / 1MX32 SD / FBGA-90 / 166 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY |
| IS42SM32100D-6BLI | ISSI/矽成 | 2.028 | 2,40 | SDRAM MOBILE / 1MX32 SD / FBGA-90 / 166 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY |
| IS42SM32100D-6BLI | ISSI/矽成 | 2.028 | 2,40 | SDRAM MOBILE / 1MX32 SD / FBGA-90 / 166 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY |
| IS42SM32100D-6BLI | ISSI/矽成 | 2.028 | 2,40 | SDRAM MOBILE / 1MX32 SD / FBGA-90 / 166 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY |
| IS42SM32100D-6BLI | ISSI/矽成 | 2.028 | 2,40 | SDRAM MOBILE / 1MX32 SD / FBGA-90 / 166 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY |
| IS42SM32100D-6BLI | ISSI/矽成 | 2.028 | 2,40 | SDRAM MOBILE / 1MX32 SD / FBGA-90 / 166 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY |
| IS42SM32100D-6BLI | ISSI/矽成 | 2.028 | 2,40 | SDRAM MOBILE / 1MX32 SD / FBGA-90 / 166 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY |
| IS43LR32800H-5BLI | ISSI/矽成 | 2.009 | 2,40 | LPDDR1 MOBILE / 8MX32 LPDDR1 / FBGA-90 / 200 MHZ / -40°C~+85°C / RoHS / 1.8 V |
| IS43LR32800H-5BLI | ISSI/矽成 | 2.009 | 2,40 | LPDDR1 MOBILE / 8MX32 LPDDR1 / FBGA-90 / 200 MHZ / -40°C~+85°C / RoHS / 1.8 V |
| IS43LR32800H-5BLI | ISSI/矽成 | 2.009 | 3,13 | LPDDR1 MOBILE / 8MX32 LPDDR1 / FBGA-90 / 200 MHZ / -40°C~+85°C / RoHS / 1.8 V |
| IS43LR32800H-5BLI | ISSI/矽成 | 1.949 | 2,40 | LPDDR1 MOBILE / 8MX32 LPDDR1 / FBGA-90 / 200 MHZ / -40°C~+85°C / RoHS / 1.8 V |
| IS42S16100E-7TL | ISSI/矽成 | 1.942 | 3,13 | SDRAM / 1MX16 SD / TSOP2(50) / 143 MHZ / 0°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 1170 PCS |
| IS46LR32800H-6BLA1 | ISSI/矽成 | 1.942 | 2,40 | LPDDR1 MOBILE / 8MX32 LPDDR1 / FBGA-90 / 166 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 240 PCS |
| IS46LR32800H-6BLA1 | ISSI/矽成 | 1.942 | 2,40 | LPDDR1 MOBILE / 8MX32 LPDDR1 / FBGA-90 / 166 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 240 PCS |
| IS46LR32800H-6BLA1 | ISSI/矽成 | 1.932 | 2,40 | LPDDR1 MOBILE / 8MX32 LPDDR1 / FBGA-90 / 166 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 240 PCS |
| IS49NLC36160A-18WBL | ISSI/矽成 | 1.927 | 2,08 | RLDRAM2 / 16MX36 RLD2 / reduced latency DRAM / FBGA-144 / 533 MHZ / 0°C~+85°C / RoHS / 1.5V/1.8V / TRAY / 1040 PCS |
| IS41C16105C-50KLI | ISSI/矽成 | 1.927 | 40,16 | DRAM / 1MX16 FP / SOJ-42 / 50 NS / -40°C~+85°C / RoHS / 5.0 V / TUBE / EOL / 1600 PCS |
| IS46LR16400C-XBLA2-AS | ISSI/矽成 | 1.922 | 3,00 | DDR1L MOBILE / 4MX16 MDDR1L / FBGA-60 / -40°C~+105°C / RoHS / 1.8 V |
| IS46LR16400C-XBLA2-AS | ISSI/矽成 | 1.922 | 3,00 | DDR1L MOBILE / 4MX16 MDDR1L / FBGA-60 / -40°C~+105°C / RoHS / 1.8 V |
| IS46LR16400C-XBLA2-AS | ISSI/矽成 | 1.922 | 3,00 | DDR1L MOBILE / 4MX16 MDDR1L / FBGA-60 / -40°C~+105°C / RoHS / 1.8 V |
| IS46LR16400C-XBLA2-AS | ISSI/矽成 | 1.922 | 3,00 | DDR1L MOBILE / 4MX16 MDDR1L / FBGA-60 / -40°C~+105°C / RoHS / 1.8 V |
| IS46LR16400C-XBLA2-AS | ISSI/矽成 | 1.922 | 3,00 | DDR1L MOBILE / 4MX16 MDDR1L / FBGA-60 / -40°C~+105°C / RoHS / 1.8 V |
| IS46LR16400C-XBLA2-AS | ISSI/矽成 | 1.922 | 3,00 | DDR1L MOBILE / 4MX16 MDDR1L / FBGA-60 / -40°C~+105°C / RoHS / 1.8 V |
| IS46LR16400C-XBLA2-AS | ISSI/矽成 | 1.922 | 3,00 | DDR1L MOBILE / 4MX16 MDDR1L / FBGA-60 / -40°C~+105°C / RoHS / 1.8 V |
| IS46LR16400C-XBLA2-AS | ISSI/矽成 | 1.922 | 3,00 | DDR1L MOBILE / 4MX16 MDDR1L / FBGA-60 / -40°C~+105°C / RoHS / 1.8 V |
| IS46LR16400C-XBLA2-AS | ISSI/矽成 | 1.922 | 3,00 | DDR1L MOBILE / 4MX16 MDDR1L / FBGA-60 / -40°C~+105°C / RoHS / 1.8 V |
| IS46LR16400C-XBLA2-AS | ISSI/矽成 | 1.922 | 3,00 | DDR1L MOBILE / 4MX16 MDDR1L / FBGA-60 / -40°C~+105°C / RoHS / 1.8 V |
| IS46LR16400C-XBLA2-AS | ISSI/矽成 | 1.922 | 3,00 | DDR1L MOBILE / 4MX16 MDDR1L / FBGA-60 / -40°C~+105°C / RoHS / 1.8 V |
| IS46LR16400C-XBLA2-AS | ISSI/矽成 | 1.922 | 3,00 | DDR1L MOBILE / 4MX16 MDDR1L / FBGA-60 / -40°C~+105°C / RoHS / 1.8 V |
| IS46LR16400C-XBLA2-AS | ISSI/矽成 | 1.922 | 3,00 | DDR1L MOBILE / 4MX16 MDDR1L / FBGA-60 / -40°C~+105°C / RoHS / 1.8 V |
| IS46LR16400C-XBLA2-AS | ISSI/矽成 | 1.922 | 3,00 | DDR1L MOBILE / 4MX16 MDDR1L / FBGA-60 / -40°C~+105°C / RoHS / 1.8 V |
| IS46LR16400C-XBLA2-AS | ISSI/矽成 | 1.922 | 3,00 | DDR1L MOBILE / 4MX16 MDDR1L / FBGA-60 / -40°C~+105°C / RoHS / 1.8 V |
| IS46LR16400C-XBLA2-AS | ISSI/矽成 | 1.922 | 3,00 | DDR1L MOBILE / 4MX16 MDDR1L / FBGA-60 / -40°C~+105°C / RoHS / 1.8 V |
| IS46LR16400C-XBLA2-AS | ISSI/矽成 | 1.922 | 3,00 | DDR1L MOBILE / 4MX16 MDDR1L / FBGA-60 / -40°C~+105°C / RoHS / 1.8 V |
| IS46LR16400C-XBLA2-AS | ISSI/矽成 | 1.922 | 3,00 | DDR1L MOBILE / 4MX16 MDDR1L / FBGA-60 / -40°C~+105°C / RoHS / 1.8 V |
| IS46LR16400C-XBLA2-AS | ISSI/矽成 | 1.922 | 3,00 | DDR1L MOBILE / 4MX16 MDDR1L / FBGA-60 / -40°C~+105°C / RoHS / 1.8 V |
| IS46LR16400C-XBLA2-AS | ISSI/矽成 | 1.922 | 3,00 | DDR1L MOBILE / 4MX16 MDDR1L / FBGA-60 / -40°C~+105°C / RoHS / 1.8 V |
| IS46LR16400C-XBLA2-AS | ISSI/矽成 | 1.922 | 3,00 | DDR1L MOBILE / 4MX16 MDDR1L / FBGA-60 / -40°C~+105°C / RoHS / 1.8 V |
| IS46LR16400C-XBLA2-AS | ISSI/矽成 | 1.922 | 3,00 | DDR1L MOBILE / 4MX16 MDDR1L / FBGA-60 / -40°C~+105°C / RoHS / 1.8 V |
| IS46LR16400C-XBLA2-AS | ISSI/矽成 | 1.922 | 3,00 | DDR1L MOBILE / 4MX16 MDDR1L / FBGA-60 / -40°C~+105°C / RoHS / 1.8 V |
| IS46LR16400C-XBLA2-AS | ISSI/矽成 | 1.922 | 3,00 | DDR1L MOBILE / 4MX16 MDDR1L / FBGA-60 / -40°C~+105°C / RoHS / 1.8 V |
| IS46LR16400C-XBLA2-AS | ISSI/矽成 | 1.922 | 2,94 | DDR1L MOBILE / 4MX16 MDDR1L / FBGA-60 / -40°C~+105°C / RoHS / 1.8 V |
| IS43LR16160G-6BLI | ISSI/矽成 | 1.918 | 2,05 | LPDDR1 MOBILE / 16MX16 LPDDR1 / FBGA-60 / 166 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 3000 PCS |
| IS43LR16160G-6BLI | ISSI/矽成 | 1.918 | 3,00 | LPDDR1 MOBILE / 16MX16 LPDDR1 / FBGA-60 / 166 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 3000 PCS |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.917 | 2,15 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS46LR32800H-6BLA1 | ISSI/矽成 | 1.915 | 2,41 | LPDDR1 MOBILE / 8MX32 LPDDR1 / FBGA-90 / 166 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 240 PCS |
| IS46LR32800H-6BLA1 | ISSI/矽成 | 1.915 | 2,40 | LPDDR1 MOBILE / 8MX32 LPDDR1 / FBGA-90 / 166 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 240 PCS |
| IS46LR32800H-6BLA1 | ISSI/矽成 | 1.915 | 2,40 | LPDDR1 MOBILE / 8MX32 LPDDR1 / FBGA-90 / 166 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 240 PCS |
| IS46LR32800H-6BLA1 | ISSI/矽成 | 1.914 | 2,11 | LPDDR1 MOBILE / 8MX32 LPDDR1 / FBGA-90 / 166 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 240 PCS |
| IS46LR32800H-6BLA1 | ISSI/矽成 | 1.912 | 2,40 | LPDDR1 MOBILE / 8MX32 LPDDR1 / FBGA-90 / 166 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 240 PCS |
| IS45R16160D-75BLA2 | ISSI/矽成 | 1.909 | 3,54 | SDRAM MOBILE / 16MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 2.5 V / TRAY |
| IS45R16160D-75BLA2 | ISSI/矽成 | 1.909 | 4,80 | SDRAM MOBILE / 16MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 2.5 V / TRAY |
| IS45R16160D-75BLA2 | ISSI/矽成 | 1.909 | 4,22 | SDRAM MOBILE / 16MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 2.5 V / TRAY |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.909 | 2,55 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS45VM16320D-75BLA2 | ISSI/矽成 | 1.909 | 3,59 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS45R16160D-75BLA2 | ISSI/矽成 | 1.909 | 2,40 | SDRAM MOBILE / 16MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 2.5 V / TRAY |
| IS45R16160D-75BLA2 | ISSI/矽成 | 1.908 | 4,80 | SDRAM MOBILE / 16MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 2.5 V / TRAY |
| IS45R16160D-75BLA2 | ISSI/矽成 | 1.908 | 3,69 | SDRAM MOBILE / 16MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 2.5 V / TRAY |
| IS45R16160D-75BLA2 | ISSI/矽成 | 1.908 | 2,40 | SDRAM MOBILE / 16MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 2.5 V / TRAY |
| IS45R16160D-75BLA2 | ISSI/矽成 | 1.908 | 6,80 | SDRAM MOBILE / 16MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 2.5 V / TRAY |
| IS45VM16320D-75BLA2 | ISSI/矽成 | 1.905 | 2,29 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS49NLC36800-33BL | ISSI/矽成 | 1.902 | 2,31 | RLDRAM2 / 8MX36 RLD2 / reduced latency DRAM / WBGA-144 / 300 MHZ / 0°C~+85°C / RoHS / 1.5V/1.8V / TRAY / 1040 PCS |
| IS45VM16320D-75BLA2 | ISSI/矽成 | 1.901 | 3,83 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS43TR16640A-15GBL | ISSI/矽成 | 1.841 | 3,80 | DDR3 SDRAM / 64MX16 DDR3 / 96-ball FBGA (9mm x 13mm) / FBGA-96 / 1333 Mbps / 0°C~+85°C / RoHS / 1.5 V / TRAY / EOL / 1900 PCS |
| IS45S16400E-7TLA1 | ISSI/矽成 | 1.840 | 8,64 | SDRAM / 4MX16 SD / TSOP2(54) / 143 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 1080 PCS |
| IS45S16800F-6BA2 | ISSI/矽成 | 1.837 | 2,57 | SDRAM / 8MX16 SD / FBGA-54 / 166 MHZ / -40°C~+105°C / Leaded / 3.3 V / TRAY |
| IS43R16320E-6TL | ISSI/矽成 | 1.837 | 4,38 | DDR1 SDRAM / 32MX16 DDR1 / TSOP2(66) / 166 MHZ / 0°C~+85°C / RoHS / 2.5 V / TRAY / 1080 PCS |
| IS43LD16320A-3BL | ISSI/矽成 | 1.836 | 2,54 | LPDDR2 MOBILE / 32MX16 LPDDR2 / 134 ball FBGA / FBGA-168 / 333 MHz / 0°C~+85°C / RoHS / 1.14V~1.95 / TRAY |
| IS45S16800F-7CTLA2 | ISSI/矽成 | 1.836 | 2,34 | SDRAM / 8MX16 SD / TSOP2(54) / 143 MHZ / -40°C~+105°C / RoHS / 3.3 V / TRAY |
| IS42S16400N-6TL | ISSI/矽成 | 1.836 | 6,56 | SDRAM / 4MX16 SD / TSOP2(54) / 166 MHZ / 0°C~+85°C / RoHS / 3.3 V / TRAY |
| IS42S16800J-6BL | ISSI/矽成 | 1.836 | 4,85 | SDRAM / 8MX16 SD / BGA-54 / 166 MHZ / 0°C~+85°C / RoHS / 3.3 V / TRAY / 3480 PCS |
| IS42S16800J-7TL | ISSI/矽成 | 1.836 | 4,47 | SDRAM / 8MX16 SD / TSOP2(54) / 143 MHZ / 0°C~+85°C / RoHS / 3.3 V / TRAY / 1080 PCS |
| IS42S32400J-6BL | ISSI/矽成 | 1.836 | 4,80 | SDRAM / 4MX32 SD / FBGA-90 / 166 MHZ / 0°C~+85°C / RoHS / 3.3 V |
| IS43R16160F-5BLI | ISSI/矽成 | 1.836 | 5,70 | DDR1 SDRAM / 16MX16 DDR1 / FBGA-60 / 200 MHZ / -40°C~+85°C / RoHS / 2.5 V / TRAY |
| IS43R16800E-5BLI | ISSI/矽成 | 1.836 | 4,95 | DDR1 SDRAM / 8MX16 DDR1 / FBGA-60 / 200 MHZ / -40°C~+85°C / RoHS / 2.5 V / TRAY |
| IS42VS32200E-10BLI | ISSI/矽成 | 1.836 | 7,20 | SDRAM-LV / 2MX32 SD / power saver / FBGA-90 / 100 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS42VS32200E-10BLI | ISSI/矽成 | 1.836 | 2,02 | SDRAM-LV / 2MX32 SD / power saver / FBGA-90 / 100 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS43DR81280B-3DBI | ISSI/矽成 | 1.836 | 7,22 | DDR2 SDRAM / 128MX8 DDR2 / 3 = up to 333 Mhz / FBGA-60 / 667 Mbps / -40°C~+85°C / Leaded / 1.8 V |
| IS43TR81280A-15GBL | ISSI/矽成 | 1.836 | 7,26 | DDR3 SDRAM / 128MX8 DDR3 / FBGA-78(8*10,5mm) / FBGA-78 / 1333 Mbps / 0°C~+85°C / RoHS / 1.5 V / TRAY / 2420 PCS |
| IS45VM16320D-75BLA2 | ISSI/矽成 | 1.835 | 8,07 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS45VM16320D-75BLA2 | ISSI/矽成 | 1.831 | 2,72 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.831 | 2,80 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.823 | 4,76 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS45VM16320D-75BLA2 | ISSI/矽成 | 1.820 | 5,08 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS45VM16320D-75BLA2 | ISSI/矽成 | 1.817 | 2,33 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS46DR32160C-3DBLA25 | ISSI/矽成 | 1.815 | 4,86 | DDR2 SDRAM / 16MX32 DDR2 / 3 = up to 333 Mhz / FBGA-126 / 667 Mbps / -40°C~+105°C / RoHS / 1.8 V / TRAY / 1620 PCS |
| IS46DR32160C-3DBLA25 | ISSI/矽成 | 1.814 | 6,48 | DDR2 SDRAM / 16MX32 DDR2 / 3 = up to 333 Mhz / FBGA-126 / 667 Mbps / -40°C~+105°C / RoHS / 1.8 V / TRAY / 1620 PCS |
| IS46DR32160C-3DBLA25 | ISSI/矽成 | 1.814 | 10,91 | DDR2 SDRAM / 16MX32 DDR2 / 3 = up to 333 Mhz / FBGA-126 / 667 Mbps / -40°C~+105°C / RoHS / 1.8 V / TRAY / 1620 PCS |
| IS46DR32160C-3DBLA25 | ISSI/矽成 | 1.813 | 3,24 | DDR2 SDRAM / 16MX32 DDR2 / 3 = up to 333 Mhz / FBGA-126 / 667 Mbps / -40°C~+105°C / RoHS / 1.8 V / TRAY / 1620 PCS |
| IS46DR32160C-3DBLA25 | ISSI/矽成 | 1.813 | 10,18 | DDR2 SDRAM / 16MX32 DDR2 / 3 = up to 333 Mhz / FBGA-126 / 667 Mbps / -40°C~+105°C / RoHS / 1.8 V / TRAY / 1620 PCS |
| IS46DR32160C-3DBLA25 | ISSI/矽成 | 1.813 | 22,33 | DDR2 SDRAM / 16MX32 DDR2 / 3 = up to 333 Mhz / FBGA-126 / 667 Mbps / -40°C~+105°C / RoHS / 1.8 V / TRAY / 1620 PCS |
| IS46DR32160C-3DBLA25 | ISSI/矽成 | 1.813 | 3,01 | DDR2 SDRAM / 16MX32 DDR2 / 3 = up to 333 Mhz / FBGA-126 / 667 Mbps / -40°C~+105°C / RoHS / 1.8 V / TRAY / 1620 PCS |
| IS46DR32801B-3DBLA25 | ISSI/矽成 | 1.808 | 3,77 | DDR2 SDRAM / 8MX32 DDR2 / 8K refresh / WBGA-126 / 667 Mbps / -40°C~+105°C / RoHS / 1.8 V |
| IS45VM16320D-75BLA2 | ISSI/矽成 | 1.808 | 2,40 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS45VM16320D-75BLA2 | ISSI/矽成 | 1.808 | 6,20 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS46DR32160C-3DBLA25 | ISSI/矽成 | 1.807 | 3,02 | DDR2 SDRAM / 16MX32 DDR2 / 3 = up to 333 Mhz / FBGA-126 / 667 Mbps / -40°C~+105°C / RoHS / 1.8 V / TRAY / 1620 PCS |
| IS42S32800J-6RTLI | ISSI/矽成 | 1.806 | 2,27 | SDRAM / 8MX32 SD / TSOP2(86) / 166 MHZ / -40°C~+95°C / RoHS / 3.3 V |
| IS45VM16320D-75BLA2 | ISSI/矽成 | 1.806 | 3,18 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS46DR32160C-3DBLA25-TR | ISSI/矽成 | 1.802 | 7,50 | DDR2 SDRAM / 16MX32 DDR2 / FBGA-126 / 667 Mbps / -40°C~+105°C / RoHS / 1.8 V / TAPE ON REEL |
| IS45VM16320D-75BLA2 | ISSI/矽成 | 1.801 | 3,30 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS43TR81280A-15GBLI | ISSI/矽成 | 1.801 | 5,60 | DDR3 SDRAM / 128MX8 DDR3 / FBGA-78(8*10,5mm) / FBGA-78 / 1333 Mbps / -40°C~+85°C / RoHS / 1.5 V / TRAY / EOL |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.752 | 2,20 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.751 | 2,77 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS43LR32320B-5BLI | ISSI/矽成 | 1.750 | 2,40 | LPDDR1 MOBILE / 32MX32 LPDDR1 / FBGA-90 / 200 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.750 | 4,50 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS45VM16320D-75BLA2 | ISSI/矽成 | 1.750 | 6,20 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.747 | 2,89 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS45VM16320D-75BLA2 | ISSI/矽成 | 1.747 | 2,67 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.746 | 3,25 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS45VM16320D-75BLA2 | ISSI/矽成 | 1.746 | 5,73 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.744 | 3,58 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS45VM16320D-75BLA2 | ISSI/矽成 | 1.741 | 2,77 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.735 | 2,95 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS45VM16320D-75BLA2 | ISSI/矽成 | 1.735 | 3,72 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.734 | 3,19 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS42VM16160D-8TLI | ISSI/矽成 | 1.731 | 2,80 | SDRAM MOBILE / 16MX16 SD / TSOP2(54) / 125 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.730 | 2,77 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.727 | 2,90 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS45VM16320D-75BLA2 | ISSI/矽成 | 1.725 | 5,23 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS42VM16160D-8TLI | ISSI/矽成 | 1.725 | 2,10 | SDRAM MOBILE / 16MX16 SD / TSOP2(54) / 125 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS42VM16160D-8TLI | ISSI/矽成 | 1.725 | 2,16 | SDRAM MOBILE / 16MX16 SD / TSOP2(54) / 125 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS43R16320E-5TL-TR | ISSI/矽成 | 1.712 | 4,50 | DDR1 SDRAM / 32MX16 DDR1 / TSOP2(66) / 200 MHZ / 0°C~+85°C / RoHS / 2.5 V / TAPE ON REEL |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.709 | 4,37 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.705 | 7,06 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS45VM16320D-75BLA2 | ISSI/矽成 | 1.705 | 3,83 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS46DR32801B-37CBLA2 | ISSI/矽成 | 1.703 | 9,79 | DDR2 SDRAM / 8MX32 DDR2 / 8K refresh / WBGA-126 / 533 MBPS / -40°C~+105°C / RoHS / 1.8 V / TRAY |
| IS46DR32801B-37CBLA2-TR | ISSI/矽成 | 1.703 | 3,00 | DDR2 SDRAM / 8MX32 DDR2 / 8K refresh / WBGA-126 / 533 MBPS / -40°C~+105°C / RoHS / 1.8 V / TAPE ON REEL |
| IS45S16160D-75ETLA1 | ISSI/矽成 | 1.703 | 30,98 | SDRAM / 16MX16 SD / TSOP2(54) / 133 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 1080 PCS |
| IS45S16160D-75ETLA1 | ISSI/矽成 | 1.703 | 8,17 | SDRAM / 16MX16 SD / TSOP2(54) / 133 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 1080 PCS |
| IS45S16160D-75ETLA1-TR | ISSI/矽成 | 1.703 | 6,00 | SDRAM / 16MX16 SD / TSOP2(54) / 133 MHZ / -40°C~+85°C / RoHS / 3.3 V / TAPE ON REEL / EOL / 1500 PCS |
| IS45S16160D-75ETLA1-TR | ISSI/矽成 | 1.702 | 4,50 | SDRAM / 16MX16 SD / TSOP2(54) / 133 MHZ / -40°C~+85°C / RoHS / 3.3 V / TAPE ON REEL / EOL / 1500 PCS |
| IS45S16160D-75ETLA1-TR | ISSI/矽成 | 1.702 | 19,50 | SDRAM / 16MX16 SD / TSOP2(54) / 133 MHZ / -40°C~+85°C / RoHS / 3.3 V / TAPE ON REEL / EOL / 1500 PCS |
| IS42RM32200M-6BLI | ISSI/矽成 | 1.701 | 14,07 | SDRAM MOBILE / 2MX32 SD / FBGA-90 / 166 MHZ / -40°C~+85°C / RoHS / 2.5 V / TRAY / 2400 PCS |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.701 | 15,14 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS45VM16320D-75BLA2 | ISSI/矽成 | 1.701 | 3,67 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS42S16100F-7TLI | ISSI/矽成 | 1.652 | 5,32 | SDRAM / 1MX16 SD / TSOP2(50) / 143 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 1170 PCS |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.650 | 7,92 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.648 | 4,29 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS45VM16320D-75BLA2 | ISSI/矽成 | 1.648 | 6,75 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.646 | 2,37 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS42S16800E-7BLI | ISSI/矽成 | 1.645 | 2,94 | SDRAM / 8MX16 SD / BGA-54 / 143 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 3480 PCS |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.644 | 3,60 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS46DR32801B-37CBLA2 | ISSI/矽成 | 1.644 | 3,24 | DDR2 SDRAM / 8MX32 DDR2 / 8K refresh / WBGA-126 / 533 MBPS / -40°C~+105°C / RoHS / 1.8 V / TRAY |
| IS42SM16400M-75BLI | ISSI/矽成 | 1.644 | 10,44 | SDRAM MOBILE / 4MX16 SD / 133 MHZ / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY / 3480 PCS |
| IS42SM16400M-75BLI | ISSI/矽成 | 1.644 | 3,84 | SDRAM MOBILE / 4MX16 SD / 133 MHZ / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY / 3480 PCS |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.643 | 4,52 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS42S16320F-6TLI | ISSI/矽成 | 1.643 | 3,55 | SDRAM / 32MX16 SD / TSOP2(54) / 166 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY / 1080 PCS |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.641 | 2,13 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS42S16100E-7TLI | ISSI/矽成 | 1.641 | 2,34 | SDRAM / 1MX16 SD / TSOP2(50) / 143 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 1170 PCS 2.0 KG 6*34*36* CM |
| IS46DR32801B-37CBLA2-TR | ISSI/矽成 | 1.641 | 4,50 | DDR2 SDRAM / 8MX32 DDR2 / 8K refresh / WBGA-126 / 533 MBPS / -40°C~+105°C / RoHS / 1.8 V / TAPE ON REEL |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.639 | 3,33 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.637 | 12,72 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.632 | 4,11 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS45S32160B-6TLA1 | ISSI/矽成 | 1.631 | 4,37 | SDRAM / 16MX32 SD / TSOP2(86) / 166 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 1080 PCS |
| IS46LD16320A-25BLA25 | ISSI/矽成 | 1.631 | 2,76 | LPDDR2 MOBILE / 32MX16 LPDDR2 / FBGA-134 / 800 Mbps / -40°C~+105°C / RoHS / 1.14V~1.95 |
| IS46LD16320A-25BLA25 | ISSI/矽成 | 1.631 | 2,13 | LPDDR2 MOBILE / 32MX16 LPDDR2 / FBGA-134 / 800 Mbps / -40°C~+105°C / RoHS / 1.14V~1.95 |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.630 | 3,22 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS42S16160D-6TL | ISSI/矽成 | 1.630 | 2,16 | SDRAM / 16MX16 SD / PC-166MHZ / TSOP2(54) / 166 MHZ / 0°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 1080 PCS |
| IS46LD16320A-25BLA25 | ISSI/矽成 | 1.630 | 2,94 | LPDDR2 MOBILE / 32MX16 LPDDR2 / FBGA-134 / 800 Mbps / -40°C~+105°C / RoHS / 1.14V~1.95 |
| IS46LD16320A-25BLA25 | ISSI/矽成 | 1.629 | 8,00 | LPDDR2 MOBILE / 32MX16 LPDDR2 / FBGA-134 / 800 Mbps / -40°C~+105°C / RoHS / 1.14V~1.95 |
| IS42SM16800E-75EBLI | ISSI/矽成 | 1.627 | 2,96 | SDRAM MOBILE / 8MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.625 | 2,20 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.617 | 6,94 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS42S16160D-6BLI | ISSI/矽成 | 1.614 | 2,22 | SDRAM / 16MX16 SD / (8.00mm x 13.00mm Body,0.8 mm Ball Pitch) / FBGA-54 / 166 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 2400 PCS |
| IS42S16160D-6BLI | ISSI/矽成 | 1.614 | 4,80 | SDRAM / 16MX16 SD / (8.00mm x 13.00mm Body,0.8 mm Ball Pitch) / FBGA-54 / 166 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 2400 PCS |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.612 | 5,64 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.608 | 6,16 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS45R16160J-75BLA2 | ISSI/矽成 | 1.604 | 2,34 | SDRAM MOBILE / 16MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 2.5 V / TRAY |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.603 | 7,25 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS41C16105C-50TI | ISSI/矽成 | 1.552 | 5,05 | DRAM / 1MX16 FP / TSOP2(44/50) / 50 NS / -40°C~+85°C / Leaded / 5.0 V / TRAY / EOL |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.551 | 6,63 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IC42S16100F-7TL | ISSI/矽成 | 1.550 | 2,91 | SDRAM / 1MX16 SD / D050 / TSOP2(50) / 143 MHZ / 0°C~+85°C / RoHS / 3.3 V / TRAY / EOL |
| IS42SM16800H-6BI | ISSI/矽成 | 1.550 | 2,07 | SDRAM MOBILE / 8MX16 SD / FBGA-54 / 166 MHZ / -40°C~+85°C / Leaded / 3.3 V / TRAY |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.549 | 5,54 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.548 | 4,88 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.546 | 3,03 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.545 | 3,93 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS42S32160C-75BL | ISSI/矽成 | 1.539 | 6,34 | SDRAM / 16MX32 SD / FBGA-90 / 133 MHZ / 0°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 2400 PCS |
| IS42S16160D-6BL | ISSI/矽成 | 1.539 | 2,17 | SDRAM / 16MX16 SD / (8.00mm x 13.00mm Body,0.8 mm Ball Pitch) / FBGA-54 / 166 MHZ / 0°C~+85°C / RoHS / 3.3 V / TRAY / EOL |
| IS43DR16160A-25EBLI | ISSI/矽成 | 1.536 | 4,42 | DDR2 SDRAM / 16MX16 DDR2 / 25 = up to 400 Mhz / FBGA-84 / 800 Mbps / -40°C~+85°C / RoHS / 1.8 V / TRAY / EOL |
| IS43DR16160A-25EBLI | ISSI/矽成 | 1.536 | 10,45 | DDR2 SDRAM / 16MX16 DDR2 / 25 = up to 400 Mhz / FBGA-84 / 800 Mbps / -40°C~+85°C / RoHS / 1.8 V / TRAY / EOL |
| IS43DR16160A-25EBLI | ISSI/矽成 | 1.536 | 4,18 | DDR2 SDRAM / 16MX16 DDR2 / 25 = up to 400 Mhz / FBGA-84 / 800 Mbps / -40°C~+85°C / RoHS / 1.8 V / TRAY / EOL |
| IS46LR32400G-6BLA1 | ISSI/矽成 | 1.536 | 2,06 | LPDDR1 MOBILE / 4MX32 LPDDR1 / FBGA-90 / 166 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS42S83200G-7BL | ISSI/矽成 | 1.533 | 7,78 | SDRAM / 32MX8 SD / 8.00mm*8.0mm, 0.8mm Ball Pitch / BGA-54 / 143 MHZ / 0°C~+85°C / RoHS / 3.3 V / TRAY / 3480 PCS |
| IS45S83200G-7BLA1 | ISSI/矽成 | 1.531 | 17,40 | SDRAM / 32MX8 SD / 8.00mm*8.0mm, 0.8mm Ball Pitch / FBGA-54 / 143 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY |
| IS42VS32200E-10BLI | ISSI/矽成 | 1.531 | 11,67 | SDRAM-LV / 2MX32 SD / power saver / FBGA-90 / 100 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS43DR16160A-5BBLI | ISSI/矽成 | 1.531 | 3,50 | DDR2 SDRAM / 16MX16 DDR2 / DDR2-400 / FBGA-84 / 400 Mbps / -40°C~+85°C / RoHS / 1.8 V / TRAY / EOL / 2090 PCS |
| IS43DR16160A-5BBLI | ISSI/矽成 | 1.530 | 2,96 | DDR2 SDRAM / 16MX16 DDR2 / DDR2-400 / FBGA-84 / 400 Mbps / -40°C~+85°C / RoHS / 1.8 V / TRAY / EOL / 2090 PCS |
| IS43DR16160A-5BBLI | ISSI/矽成 | 1.530 | 6,27 | DDR2 SDRAM / 16MX16 DDR2 / DDR2-400 / FBGA-84 / 400 Mbps / -40°C~+85°C / RoHS / 1.8 V / TRAY / EOL / 2090 PCS |
| IS45S16800E-7TLA2 | ISSI/矽成 | 1.530 | 3,50 | SDRAM / 8MX16 SD / TSOP2(54) / 143 MHZ / -40°C~+105°C / RoHS / 3.3 V / TRAY / 1080 PCS |
| IS45VM16800E-75BLA2 | ISSI/矽成 | 1.530 | 4,80 | SDRAM MOBILE / 8MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY |
| IS43DR16160A-25EBLI | ISSI/矽成 | 1.530 | 6,39 | DDR2 SDRAM / 16MX16 DDR2 / 25 = up to 400 Mhz / FBGA-84 / 800 Mbps / -40°C~+85°C / RoHS / 1.8 V / TRAY / EOL |
| IS46DR16160A-37CBLA1 | ISSI/矽成 | 1.529 | 2,09 | DDR2 SDRAM / 16MX16 DDR2 / 37 = up to 266Mhz / FBGA-84 / 533 MBPS / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2090 PCS |
| IS46DR16160A-37CBLA1 | ISSI/矽成 | 1.529 | 2,09 | DDR2 SDRAM / 16MX16 DDR2 / 37 = up to 266Mhz / FBGA-84 / 533 MBPS / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2090 PCS |
| IS46DR16160A-37CBLA1 | ISSI/矽成 | 1.529 | 4,58 | DDR2 SDRAM / 16MX16 DDR2 / 37 = up to 266Mhz / FBGA-84 / 533 MBPS / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2090 PCS |
| IS46DR16160A-37CBLA1 | ISSI/矽成 | 1.529 | 4,20 | DDR2 SDRAM / 16MX16 DDR2 / 37 = up to 266Mhz / FBGA-84 / 533 MBPS / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2090 PCS |
| IS42VS32200E-10BLI | ISSI/矽成 | 1.528 | 8,96 | SDRAM-LV / 2MX32 SD / power saver / FBGA-90 / 100 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS42VS32200E-10BLI | ISSI/矽成 | 1.528 | 2,16 | SDRAM-LV / 2MX32 SD / power saver / FBGA-90 / 100 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS42S32160C-6BI | ISSI/矽成 | 1.528 | 2,40 | SDRAM / 16MX32 SD / FBGA-90 / 166 MHZ / -40°C~+85°C / Leaded / 3.3 V / TRAY / EOL |
| IS42S32160B-7TL | ISSI/矽成 | 1.524 | 2,16 | SDRAM / 16MX32 SD / TSOP2(86) / 143 MHZ / 0°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 1080 PCS |
| IS42S32400E-7BL | ISSI/矽成 | 1.521 | 2,51 | SDRAM / 4MX32 SD / FBGA-90 / 143 MHZ / 0°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 240 PCS |
| IS42S32400E-7BL | ISSI/矽成 | 1.521 | 7,20 | SDRAM / 4MX32 SD / FBGA-90 / 143 MHZ / 0°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 240 PCS |
| IS42VM16160D-8BLI | ISSI/矽成 | 1.521 | 20,40 | SDRAM MOBILE / 16MX16 SD / FBGA-54 / 125 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / EOL / 240 PCS |
| IS42VM16160D-8BLI | ISSI/矽成 | 1.520 | 4,72 | SDRAM MOBILE / 16MX16 SD / FBGA-54 / 125 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / EOL / 240 PCS |
| IS42VM16160D-8BLI | ISSI/矽成 | 1.520 | 4,80 | SDRAM MOBILE / 16MX16 SD / FBGA-54 / 125 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / EOL / 240 PCS |
| IS42VM16160D-8BLI | ISSI/矽成 | 1.519 | 9,92 | SDRAM MOBILE / 16MX16 SD / FBGA-54 / 125 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / EOL / 240 PCS |
| IS46LR32160B-6BLA2 | ISSI/矽成 | 1.519 | 7,51 | LPDDR1 MOBILE / 16MX32 LPDDR1 / Automotive Range / FBGA-90 / 166 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY |
| IC42S16100F-7TL | ISSI/矽成 | 1.517 | 4,68 | SDRAM / 1MX16 SD / D050 / TSOP2(50) / 143 MHZ / 0°C~+85°C / RoHS / 3.3 V / TRAY / EOL |
| IS42S32400E-7BL | ISSI/矽成 | 1.516 | 2,40 | SDRAM / 4MX32 SD / FBGA-90 / 143 MHZ / 0°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 240 PCS |
| IS46DR16160A-37CBLA1 | ISSI/矽成 | 1.515 | 2,24 | DDR2 SDRAM / 16MX16 DDR2 / 37 = up to 266Mhz / FBGA-84 / 533 MBPS / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2090 PCS |
| IS46DR16160A-37CBLA1 | ISSI/矽成 | 1.515 | 2,09 | DDR2 SDRAM / 16MX16 DDR2 / 37 = up to 266Mhz / FBGA-84 / 533 MBPS / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2090 PCS |
| IS46DR16160A-37CBLA1 | ISSI/矽成 | 1.515 | 2,09 | DDR2 SDRAM / 16MX16 DDR2 / 37 = up to 266Mhz / FBGA-84 / 533 MBPS / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2090 PCS |
| IS46DR16160A-37CBLA1 | ISSI/矽成 | 1.513 | 2,38 | DDR2 SDRAM / 16MX16 DDR2 / 37 = up to 266Mhz / FBGA-84 / 533 MBPS / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2090 PCS |
| IS42S16100F-7TL | ISSI/矽成 | 1.513 | 3,47 | SDRAM / 1MX16 SD / TSOP2(50) / 143 MHZ / 0°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 1170 PCS |
| IS43DR16160A-37CBL | ISSI/矽成 | 1.513 | 3,19 | DDR2 SDRAM / 16MX16 DDR2 / DDR2-533 / FBGA-84 / 533 MBPS / 0°C~+85°C / RoHS / 1.8 V / TRAY / EOL / 209 PCS |
| IS46DR16160A-37CBLA1 | ISSI/矽成 | 1.512 | 2,52 | DDR2 SDRAM / 16MX16 DDR2 / 37 = up to 266Mhz / FBGA-84 / 533 MBPS / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2090 PCS |
| IS46DR16160A-37CBLA1 | ISSI/矽成 | 1.512 | 2,09 | DDR2 SDRAM / 16MX16 DDR2 / 37 = up to 266Mhz / FBGA-84 / 533 MBPS / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2090 PCS |
| IS46LR32160B-6BLA2 | ISSI/矽成 | 1.512 | 6,78 | LPDDR1 MOBILE / 16MX32 LPDDR1 / Automotive Range / FBGA-90 / 166 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY |
| IS43DR16160A-37CBLI | ISSI/矽成 | 1.507 | 2,09 | DDR2 SDRAM / 16MX16 DDR2 / DDR2-533 / FBGA-84 / 533 MBPS / -40°C~+85°C / RoHS / 1.8 V / TRAY / 209 PCS |
| IS42S16800E-75EBL | ISSI/矽成 | 1.502 | 2,36 | SDRAM / 8MX16 SD / BGA-54 / 133 MHZ / 0°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 3480 PCS |
| IS43DR16160A-5BBLI | ISSI/矽成 | 1.502 | 2,45 | DDR2 SDRAM / 16MX16 DDR2 / DDR2-400 / FBGA-84 / 400 Mbps / -40°C~+85°C / RoHS / 1.8 V / TRAY / EOL / 2090 PCS |
| IS45S16160D-7BLA1 | ISSI/矽成 | 1.502 | 5,08 | SDRAM / 16MX16 SD / (8.00mm x 13.00mm Body,0.8 mm Ball Pitch) / FBGA-54 / 143 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 2400 PCS |
| IS42S83200D-7TL | ISSI/矽成 | 1.451 | 2,12 | SDRAM / 32MX8 SD / TSOP2(54) / 143 MHZ / 0°C~+85°C / RoHS / 3.3 V / TRAY |
| IS43DR82560B-25EBL | ISSI/矽成 | 1.450 | 16,00 | DDR2 SDRAM / 256MX8 DDR2 / 25 = up to 400 Mhz / FBGA-60 / 800 Mbps / 0°C~+85°C / RoHS / 1.8 V / TRAY / EOL |
| IS43DR82560B-25EBL | ISSI/矽成 | 1.450 | 2,77 | DDR2 SDRAM / 256MX8 DDR2 / 25 = up to 400 Mhz / FBGA-60 / 800 Mbps / 0°C~+85°C / RoHS / 1.8 V / TRAY / EOL |
| IS43DR82560B-25EBL | ISSI/矽成 | 1.449 | 9,94 | DDR2 SDRAM / 256MX8 DDR2 / 25 = up to 400 Mhz / FBGA-60 / 800 Mbps / 0°C~+85°C / RoHS / 1.8 V / TRAY / EOL |
| IS45S16160D-7BLA1 | ISSI/矽成 | 1.448 | 2,75 | SDRAM / 16MX16 SD / (8.00mm x 13.00mm Body,0.8 mm Ball Pitch) / FBGA-54 / 143 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 2400 PCS |
| IS43DR82560B-25EBL | ISSI/矽成 | 1.448 | 37,43 | DDR2 SDRAM / 256MX8 DDR2 / 25 = up to 400 Mhz / FBGA-60 / 800 Mbps / 0°C~+85°C / RoHS / 1.8 V / TRAY / EOL |
| IS43DR82560B-25EBL | ISSI/矽成 | 1.447 | 11,15 | DDR2 SDRAM / 256MX8 DDR2 / 25 = up to 400 Mhz / FBGA-60 / 800 Mbps / 0°C~+85°C / RoHS / 1.8 V / TRAY / EOL |
| IS43DR82560B-25EBL | ISSI/矽成 | 1.446 | 12,24 | DDR2 SDRAM / 256MX8 DDR2 / 25 = up to 400 Mhz / FBGA-60 / 800 Mbps / 0°C~+85°C / RoHS / 1.8 V / TRAY / EOL |
| IS45S16400E-7TLA1 | ISSI/矽成 | 1.446 | 2,74 | SDRAM / 4MX16 SD / TSOP2(54) / 143 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 1080 PCS |
| IS45S16400E-7TLA1 | ISSI/矽成 | 1.446 | 5,43 | SDRAM / 4MX16 SD / TSOP2(54) / 143 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 1080 PCS |
| IS43DR16160A-3DBI | ISSI/矽成 | 1.446 | 2,05 | DDR2 SDRAM / 16MX16 DDR2 / 3 = up to 333 Mhz / FBGA-84 / 667 Mbps / -40°C~+125°C / Leaded / 1.8 V / TRAY |
| IS43DR16160A-3DBI | ISSI/矽成 | 1.446 | 3,85 | DDR2 SDRAM / 16MX16 DDR2 / 3 = up to 333 Mhz / FBGA-84 / 667 Mbps / -40°C~+125°C / Leaded / 1.8 V / TRAY |
| IS45S16400E-7TLA1 | ISSI/矽成 | 1.446 | 5,90 | SDRAM / 4MX16 SD / TSOP2(54) / 143 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 1080 PCS |
| IS42S16800E-7BL | ISSI/矽成 | 1.443 | 2,90 | SDRAM / 8MX16 SD / BGA-54 / 143 MHZ / 0°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 3480 PCS |
| IS45S16160D-7BLA1 | ISSI/矽成 | 1.442 | 2,48 | SDRAM / 16MX16 SD / (8.00mm x 13.00mm Body,0.8 mm Ball Pitch) / FBGA-54 / 143 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 2400 PCS |
| IS43DR16160A-37CBL | ISSI/矽成 | 1.442 | 4,83 | DDR2 SDRAM / 16MX16 DDR2 / DDR2-533 / FBGA-84 / 533 MBPS / 0°C~+85°C / RoHS / 1.8 V / TRAY / EOL / 209 PCS |
| IS43DR16160A-37CBL | ISSI/矽成 | 1.442 | 4,18 | DDR2 SDRAM / 16MX16 DDR2 / DDR2-533 / FBGA-84 / 533 MBPS / 0°C~+85°C / RoHS / 1.8 V / TRAY / EOL / 209 PCS |
| IS42VS32200E-10BLI | ISSI/矽成 | 1.442 | 2,40 | SDRAM-LV / 2MX32 SD / power saver / FBGA-90 / 100 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS45S16160D-7BLA1 | ISSI/矽成 | 1.440 | 2,31 | SDRAM / 16MX16 SD / (8.00mm x 13.00mm Body,0.8 mm Ball Pitch) / FBGA-54 / 143 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 2400 PCS |
| IS42S16800E-7BL | ISSI/矽成 | 1.431 | 2,44 | SDRAM / 8MX16 SD / BGA-54 / 143 MHZ / 0°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 3480 PCS |
| IS46LR32160B-6BLA2 | ISSI/矽成 | 1.425 | 3,27 | LPDDR1 MOBILE / 16MX32 LPDDR1 / Automotive Range / FBGA-90 / 166 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY |
| IS45VM16320D-75BLA2 | ISSI/矽成 | 1.425 | 2,40 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS43DR16320B-25DBL | ISSI/矽成 | 1.414 | 12,24 | DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 800 Mbps / 0°C~+85°C / RoHS / 1.8 V / TRAY / EOL / 2090 PCS 2.0 KG 37*16*9 CM |
| IS45VM16320D-75BLA2 | ISSI/矽成 | 1.413 | 2,40 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS45VM16320D-75BLA2 | ISSI/矽成 | 1.413 | 2,40 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS45VM16320D-75BLA2 | ISSI/矽成 | 1.410 | 2,40 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS45VM16320D-75BLA2 | ISSI/矽成 | 1.408 | 2,40 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS45VM16320D-75BLA2 | ISSI/矽成 | 1.406 | 4,80 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS46LR32160B-6BLA2 | ISSI/矽成 | 1.405 | 2,40 | LPDDR1 MOBILE / 16MX32 LPDDR1 / Automotive Range / FBGA-90 / 166 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY |
| IS43DR16320B-25DBL | ISSI/矽成 | 1.405 | 2,72 | DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 800 Mbps / 0°C~+85°C / RoHS / 1.8 V / TRAY / EOL / 2090 PCS 2.0 KG 37*16*9 CM |
| IS45VM16320D-75BLA2 | ISSI/矽成 | 1.404 | 2,40 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS45VM16320D-75BLA2 | ISSI/矽成 | 1.403 | 4,80 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS45VM16320D-75BLA2 | ISSI/矽成 | 1.403 | 2,39 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS46LR32160B-6BLA2 | ISSI/矽成 | 1.403 | 2,40 | LPDDR1 MOBILE / 16MX32 LPDDR1 / Automotive Range / FBGA-90 / 166 MHZ / -40°C~+105°C / RoHS / 1.8 V / TRAY |
| IS43DR16320B-3DBL | ISSI/矽成 | 1.352 | 21,76 | DDR2 SDRAM / 32MX16 DDR2 / 3 = up to 333 Mhz / FBGA-84 / 667 Mbps / 0°C~+85°C / RoHS / 1.8 V / TRAY / EOL / 1360 PCS 2.0 KG 37*16*9 CM |
| IS43R16160D-6BI | ISSI/矽成 | 1.344 | 4,56 | DDR1 SDRAM / 16MX16 DDR1 / FBGA-60 / 166 MHZ / -40°C~+85°C / Leaded / 2.5 V |
| IS43TR81280A-15GBLI | ISSI/矽成 | 1.338 | 29,67 | DDR3 SDRAM / 128MX8 DDR3 / FBGA-78(8*10,5mm) / FBGA-78 / 1333 Mbps / -40°C~+85°C / RoHS / 1.5 V / TRAY / EOL |
| IS43TR81280A-15GBLI | ISSI/矽成 | 1.335 | 28,30 | DDR3 SDRAM / 128MX8 DDR3 / FBGA-78(8*10,5mm) / FBGA-78 / 1333 Mbps / -40°C~+85°C / RoHS / 1.5 V / TRAY / EOL |
| IS43LR16320B-6BLI | ISSI/矽成 | 1.330 | 5,30 | LPDDR1 MOBILE / 32MX16 LPDDR1 / FBGA-60 / 166 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 3000 PCS |
| IS45VM16320D-75BLA1 | ISSI/矽成 | 1.327 | 2,40 | SDRAM MOBILE / 32MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY |
| IS43LR16320B-6BLI | ISSI/矽成 | 1.322 | 9,00 | LPDDR1 MOBILE / 32MX16 LPDDR1 / FBGA-60 / 166 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 3000 PCS |
| IS46LR32160B-6BLA1 | ISSI/矽成 | 1.301 | 2,31 | LPDDR1 MOBILE / 16MX32 LPDDR1 / Automotive Range / FBGA-90 / 166 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS46LR32160B-6BLA1 | ISSI/矽成 | 1.301 | 2,40 | LPDDR1 MOBILE / 16MX32 LPDDR1 / Automotive Range / FBGA-90 / 166 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS42VM16400G-75BLI | ISSI/矽成 | 1.252 | 2,48 | SDRAM MOBILE / 4MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 3480 PCS |
| IS42VM16400G-75BLI | ISSI/矽成 | 1.252 | 6,96 | SDRAM MOBILE / 4MX16 SD / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 3480 PCS |
| IS46LR32160B-6BLA1 | ISSI/矽成 | 1.251 | 4,80 | LPDDR1 MOBILE / 16MX32 LPDDR1 / Automotive Range / FBGA-90 / 166 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS42VS16100E-75BLI | ISSI/矽成 | 1.248 | 3,93 | SDRAM-LV / 1MX16 SD / power saver / BGA-60 / 133 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / EOL |
| IS46LR32160B-6BLA1 | ISSI/矽成 | 1.244 | 2,16 | LPDDR1 MOBILE / 16MX32 LPDDR1 / Automotive Range / FBGA-90 / 166 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS41C16257C-35TLI | ISSI/矽成 | 1.240 | 2,72 | DRAM / 256KX16 FP / TSOP2(40) / 35 NS / -40°C~+85°C / RoHS / 5.0 V / EOL |
| IS46LR32160B-6BLA1 | ISSI/矽成 | 1.236 | 2,40 | LPDDR1 MOBILE / 16MX32 LPDDR1 / Automotive Range / FBGA-90 / 166 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS43R16160B-75TL | ISSI/矽成 | 1.230 | 4,32 | DDR1 SDRAM / 16MX16 DDR1 / TSOP2(66) / 200 MHZ / 0°C~+85°C / RoHS / 2.5 V / TRAY / EOL / 108 PCS |
| IS42SM16400G-75BLI | ISSI/矽成 | 1.229 | 2,77 | SDRAM MOBILE / 4MX16 SD / 133 MHZ / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY / 3480 PCS |
| IS42SM16400G-75BLI | ISSI/矽成 | 1.229 | 3,48 | SDRAM MOBILE / 4MX16 SD / 133 MHZ / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY / 3480 PCS |
| IS42SM16400G-75BLI | ISSI/矽成 | 1.229 | 6,96 | SDRAM MOBILE / 4MX16 SD / 133 MHZ / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY / 3480 PCS |
| IS42SM16400G-75BLI | ISSI/矽成 | 1.229 | 2,50 | SDRAM MOBILE / 4MX16 SD / 133 MHZ / FBGA-54 / 133 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY / 3480 PCS |
| IS46LR32160B-6BLA1 | ISSI/矽成 | 1.227 | 3,49 | LPDDR1 MOBILE / 16MX32 LPDDR1 / Automotive Range / FBGA-90 / 166 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS46LR32160B-6BLA1 | ISSI/矽成 | 1.227 | 4,80 | LPDDR1 MOBILE / 16MX32 LPDDR1 / Automotive Range / FBGA-90 / 166 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS46LR32160B-6BLA1 | ISSI/矽成 | 1.225 | 4,80 | LPDDR1 MOBILE / 16MX32 LPDDR1 / Automotive Range / FBGA-90 / 166 MHZ / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2400 PCS |
| IS42S32800B-6B | ISSI/矽成 | 1.225 | 2,40 | SDRAM / 8MX32 SD / BGA-90 / 166 MHZ / 0°C~+85°C / Leaded / 3.3 V / TRAY |
| IS41C16256C-35TLI | ISSI/矽成 | 1.221 | 2,47 | DRAM / 256KX16 EDO / TSOP2(40/44) / 35 NS / -40°C~+85°C / RoHS / 5.0 V / TRAY / EOL / 135 PCS |
| IS43DR16640A-3DBL | ISSI/矽成 | 1.132 | 5,70 | DDR2 SDRAM / 64MX16 DDR2 / 3 = up to 333 Mhz / FBGA-84 / 667 Mbps / 0°C~+85°C / RoHS / 1.8 V / TRAY / 1900 PCS |
| IC43R16160E-5TL | ISSI/矽成 | 1.128 | 3,24 | DDR1 SDRAM / 16MX16 DDR1 / K059 / TSOP2(66) / 200 MHZ / 0°C~+85°C / RoHS / 2.5 V / TRAY / EOL |
| IS42S32200E-6BI | ISSI/矽成 | 1.113 | 2,40 | SDRAM / 2MX32 SD / BGA-90 / 166 MHZ / -40°C~+85°C / Leaded / 3.3 V / TRAY / EOL |
| IS42S32200E-6BI | ISSI/矽成 | 1.113 | 2,40 | SDRAM / 2MX32 SD / BGA-90 / 166 MHZ / -40°C~+85°C / Leaded / 3.3 V / TRAY / EOL |
| IS42S32200E-6BI | ISSI/矽成 | 1.113 | 2,40 | SDRAM / 2MX32 SD / BGA-90 / 166 MHZ / -40°C~+85°C / Leaded / 3.3 V / TRAY / EOL |
| IS42S32200E-6BI | ISSI/矽成 | 1.112 | 9,60 | SDRAM / 2MX32 SD / BGA-90 / 166 MHZ / -40°C~+85°C / Leaded / 3.3 V / TRAY / EOL |
| IS42S32200E-6BI | ISSI/矽成 | 1.112 | 7,20 | SDRAM / 2MX32 SD / BGA-90 / 166 MHZ / -40°C~+85°C / Leaded / 3.3 V / TRAY / EOL |
| IS42S32800B-7TI | ISSI/矽成 | 802 | 2,16 | SDRAM / 8MX32 SD / TSOP2(86) / 143 MHZ / -40°C~+85°C / Leaded / 3.3 V |
| IS42S32800B-7TI | ISSI/矽成 | 752 | 2,12 | SDRAM / 8MX32 SD / TSOP2(86) / 143 MHZ / -40°C~+85°C / Leaded / 3.3 V |
| IS42S16800A-7T | ISSI/矽成 | 551 | 4,07 | SDRAM / 8MX16 SD / TSOP2(54) / 143 MHZ / 0°C~+85°C / Leaded / 3.3 V / TRAY / 1080 PCS |
| IC41LV16256-35T | ISSI/矽成 | 539 | 2,23 | DRAM / 256KX16 EDO / TSOP2(40/44) / 0°C~+85°C / Leaded / 3.3 V / TRAY / EOL / 1350 PCS 2.0 KG 37X16X9 CM |
| IC41LV16100S-50TG | ISSI/矽成 | 432 | 8,01 | DRAM / 1MX16 EDO / TSOP2(44/50) / 50 NS / 0°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 1170 PCS 2.0 KG 38*19*10 CM |
| IC63LV1024-15J | ISSI/矽成 | 414 | 10,75 | SRAM / 128KX8 FAST / SOJ / 0°C~+85°C / Leaded / 3.3 V / 22/TUBE / EOL |
| IS61C64AH-15J | ISSI/矽成 | 352 | 8,79 | SRAM / 8KX8 SRAM / HIGH SPEED / SOJ-28 / 15 NS / 0°C~+70°C / Leaded / 5.0 V / 3500 PCS 5.0 KG 11*13*53 CM |
| IS42S32200B-7T-TR | ISSI/矽成 | 345 | 2,50 | SDRAM / 2MX32 SD / TSOP2(86) / 143 MHZ / 0°C~+85°C / Leaded / 3.3 V / TAPE ON REEL / 1500 PCS |
| IS41LV16100S-50K | ISSI/矽成 | 332 | 4,66 | DRAM / 1MX16 EDO / SOJ-42 / 50 NS / 0°C~+70°C / Leaded / 3.3 V / TUBE / EOL / 1600 PCS |
| IC62LV1024LL-55H | ISSI/矽成 | 323 | 4,00 | SRAM / 128KX8 SRAM / STSOP / Leaded / 3.3 V / EOL / 2340 PCS 2.31 KG 37*16*9 CM |
| T523G337M010APE150 | KEMET/基美特 | 1.807 | 6,33 | CAPACITOR / 523G337 / SMD / 330 UF / -55°C~+85°C / RoHS / 10.0V / TAPE ON REEL / 1000 PCS |
| TC58NVM9S3ETA00 | KIOXIA/鎧俠 | 1.635 | 5,28 | FLASH-NAND / 64MX8 NAND SLC / TSOP-48 / 25 ns / 0°C~+70°C / RoHS / 3.3 V / TRAY / EOL / 480 PCS |
| TC58NVM9S3ETA00 | KIOXIA/鎧俠 | 1.634 | 9,12 | FLASH-NAND / 64MX8 NAND SLC / TSOP-48 / 25 ns / 0°C~+70°C / RoHS / 3.3 V / TRAY / EOL / 480 PCS |
| TC58NVM9S3ETA00 | KIOXIA/鎧俠 | 1.629 | 14,40 | FLASH-NAND / 64MX8 NAND SLC / TSOP-48 / 25 ns / 0°C~+70°C / RoHS / 3.3 V / TRAY / EOL / 480 PCS |
| TC58NVM9S3ETA00 | KIOXIA/鎧俠 | 1.622 | 16,32 | FLASH-NAND / 64MX8 NAND SLC / TSOP-48 / 25 ns / 0°C~+70°C / RoHS / 3.3 V / TRAY / EOL / 480 PCS |
| TC58NVM9S3ETA00 | KIOXIA/鎧俠 | 1.621 | 7,20 | FLASH-NAND / 64MX8 NAND SLC / TSOP-48 / 25 ns / 0°C~+70°C / RoHS / 3.3 V / TRAY / EOL / 480 PCS |
| TC58NVM9S3ETA00 | KIOXIA/鎧俠 | 1.615 | 2,40 | FLASH-NAND / 64MX8 NAND SLC / TSOP-48 / 25 ns / 0°C~+70°C / RoHS / 3.3 V / TRAY / EOL / 480 PCS |
| TC58MBM82F1XGI1 | KIOXIA/鎧俠 | 601 | 54,37 | FLASH-NAND / 32MB DOC / FBGA-85 / 25 ns / -40°C~+85°C / RoHS / 3.3 V / TAPE ON REEL / 1000 PCS |
| TC58MBM94G1FT00 | KIOXIA/鎧俠 | 525 | 18,55 | FLASH-NAND / 64MB DOC / TSOP-48 / 55 NS / 0°C~+85°C / Leaded / 3.3 V / T&R / 1000 PCS 1.22 KG 28*27*6 CM |
| TC58FVM5B2AFT-65BAH | KIOXIA/鎧俠 | 416 | 5,29 | FLASH-NOR / 29DL320 / TSOP-48 / -40°C~+85°C / RoHS / 3.0V / TRAY / 480 PCS 1.13 KG 35*16*5 CM |
| ISPGAL22LV10-15LJ | LATTICE/萊迪思 | 16 | 4,05 | GAL / 22LV10 / SOJ / Leaded / 3.3 V / TUBE / 330 PCS |
| LTL4232N-002A | LITEON/光寶 | 137 | 32,00 | LEDS / LTL4232 / RoHS / TAPE ON REEL |
| LTL4232N-002A | LITEON/光寶 | 137 | 2,50 | LEDS / LTL4232 / RoHS / TAPE ON REEL |
| 65034B2-004-UD0PPPFAA | LSI LOGIC | 38 | 14,85 | SATELLITE RECEIVER / L64724 / PQFP-100 / Leaded / 3.3 V / TRAY / 396 PCS |
| L64724-75 | LSI LOGIC | 36 | 19,95 | SATELLITE RECEIVER / L64724 / PQFP-100 / 75MHz / -40°C~+125°C / Leaded / 3.3 V / TRAY / 396 PCS |
| 65034B2-UD0PPPFAA | LSI LOGIC | 36 | 19,95 | SATELLITE RECEIVER / L64724 / PQFP-100 / Leaded / 3.3 V / TRAY / 396 PCS |
| 65034B2-004-UD0PPPFAA | LSI LOGIC | 26 | 4,74 | SATELLITE RECEIVER / L64724 / PQFP-100 / Leaded / 3.3 V / TRAY / 396 PCS |
| MX25L6433FMI-08G/TR | MACRONIX/MXIC/旺宏 | 2.208 | 3,00 | FLASH-SPI / 64MB SPI / M: 300mil 16-SOP / SOP-16 / 133 MHZ / -40°C~+85°C / RoHS / 3.3 V / TAPE ON REEL / 1000 PCS |
| MX30LF1G18AC-TI | MACRONIX/MXIC/旺宏 | 2.135 | 35,52 | FLASH-NAND / 128MX8 NAND SLC / F = SLC + Large Block / TSOP-48 / 25 ns / -40°C~+85°C / RoHS / 2.7V~3.6V / TRAY / 960 PCS 2.08 KG 38*16*9 CM |
| MX30LF1G18AC-TI | MACRONIX/MXIC/旺宏 | 2.134 | 19,20 | FLASH-NAND / 128MX8 NAND SLC / F = SLC + Large Block / TSOP-48 / 25 ns / -40°C~+85°C / RoHS / 2.7V~3.6V / TRAY / 960 PCS 2.08 KG 38*16*9 CM |
| MX25L6433FM2I-08G-TR | MACRONIX/MXIC/旺宏 | 2.125 | 18,00 | FLASH-SPI / 64MB SPI / M2: 200mil 8-SOP / SOP-8 / 133 MHZ / -40°C~+85°C / RoHS / 3.3 V / TAPE ON REEL / 2000 PCS 0.0 KG 39*36*6 CM |
| MX29LV400BXBC-70G | MACRONIX/MXIC/旺宏 | 444 | 2,18 | FLASH-NOR / 29LV400 BOTTOM / FBGA-48 / 70 NS / 0°C~+70°C / RoHS / 3.3 V / TRAY |
| MX29LV040QC-70TR | MACRONIX/MXIC/旺宏 | 425 | 4,50 | FLASH-NOR / 29LV040 / PLCC-32 / 70 NS / 0°C~+70°C / Leaded / 3.3 V / TAPE ON REEL / 750 PCS 0.8 KG 38X35X6 CM |
| MX29LV320BTC-90 | MACRONIX/MXIC/旺宏 | 401 | 9,98 | FLASH-NOR / 29LV320 BOTTOM / TSOP-48 / 90 NS / 0°C~+70°C / Leaded / 3.3 V / TRAY / EOL / 768 PCS 2.0 KG |
| MX27L2000QC-120 | MACRONIX/MXIC/旺宏 | 327 | 4,39 | OTPROM / 27LV020 / PLCC / Leaded / TUBE |
| 8GB USB | MAJOR | 1.801 | 3,11 | MEMORY-FLASH USB DRIVER / 8GB USB / RoHS |
| 16GB USB | MAJOR | 1.801 | 2,23 | MEMORY-FLASH USB DRIVER / 16GB USB / RoHS |
| SMD2835 | MAJOR | 1.801 | 6,20 | LEDS / SMD2835 / 15FT 4,4W / RoHS / 12.0 V |
| 8GB MICRO-SD | MAJOR | 1.801 | 10,35 | MEMORY CARD-MICRO-SD / 8GB MICRO-SD / RoHS |
| 32GB MICRO-SD | MAJOR | 1.801 | 11,28 | MEMORY CARD-SD / 32GB MICRO-SD / RoHS |
| 4GB MICRO-SD | MAJOR | 1.801 | 3,07 | MEMORY CARD-MICRO-SD / 4GB MICRO-SD / RoHS |
| 16GB MICRO-SD | MAJOR | 1.801 | 26,50 | MEMORY CARD-MICRO-SD / 16GB MICRO-SD / RoHS |
| 64GB MICRO-SD | MAJOR | 1.801 | 2,76 | MEMORY CARD-MICRO-SD / 64GB MICRO-SD / RoHS |
| SMART WATCH | MAJOR | 1.701 | 28,00 | SMART WATCH / SMART WATCH / RoHS |
| KARAOKE MICROPHONE | MAJOR | 1.701 | 20,00 | OTHER / WS858 / RoHS |
| AT25640AN-10SU-2.7 | MICROCHIP/微芯 | 646 | 2,10 | EEPROM / AT25640 / SOIC-8 / 10 MHZ / -40°C~+85°C / RoHS / 2.7v-5.5v / TUBE / EOL / 100 PCS |
| AT24C256U2-10UI2.7 | MICROCHIP/微芯 | 523 | 135,00 | EEPROM-2WIRE / 24C256 / 8-BALL, DIE BALL GRID ARRAY PACKAGE (DBGA2) / DBGA2-8 / 100 KHz / -40°C~+85°C / RoHS / 2.7v-5.5v / TAPE ON REEL / 5000 PCS 0.76 KG 37*35*5 CM |
| 01-AS-073-00P | MICROCHIP/微芯 | 516 | 5,76 | ASIC / 58A45 / QFN-48PIN / Leaded / TRAY / 1000 PCS |
| AT58A45K-02 | MICROCHIP/微芯 | 516 | 5,76 | ASIC / 58A45 / QFN-48PIN / Leaded / 2.0 KG 34,5*6*8 CM |
| AT25010AN-10SI | MICROCHIP/微芯 | 506 | 27,00 | EEPROM / AT25010 / SOIC-8 / 2100 KHz / -40°C~+85°C / RoHS / 2.7V-5.5V / TAPE ON REEL / 3000 PCS 0.94 KG 35*37*6 CM |
| AT49F512-70TI | MICROCHIP/微芯 | 246 | 4,99 | FLASH-NOR / 49F512 / 8*20mm / TSOP-32 / 70 NS / -40°C~+85°C / Leaded / 5.0 V / TRAY / EOL / 1560 PCS 1.5 KG |
| AT49F512-70TI | MICROCHIP/微芯 | 240 | 2,79 | FLASH-NOR / 49F512 / 8*20mm / TSOP-32 / 70 NS / -40°C~+85°C / Leaded / 5.0 V / TRAY / EOL / 1560 PCS 1.5 KG |
| AT25256W-10SI | MICROCHIP/微芯 | 120 | 3,05 | EEPROM-SPI / 256K SPI-EEPROM / SOIC-8 / -40°C~+85°C / Leaded / 4.5V-5.5V / TUBE / 94 PCS |
| AT27BV1024-90VC | MICROCHIP/微芯 | 110 | 4,40 | OTPROM / 27BV1024 / VSOP-40 / 90 NS / 0°C~+70°C / Leaded / 2.7V~3.6V / TRAY / 1600 PCS 3.0 KG 21*12*35 CM |
| AT27BV010-12VC | MICROCHIP/微芯 | 22 | 10,40 | OTPROM / 27BV010 / VSOP-32 / 120 NS / 0°C~+70°C / Leaded / 2.7V~3.6V / TRAY |
| MT41K128M16JT-125IT:KTR | MICRON/美光 | 2.402 | 100,00 | DDR3L SDRAM / 128MX16 DDR3L / FBGA-96(9*14MM) D9PSK / FBGA-96 / 1600 Mbps / -40°C~+95°C / RoHS / 1.35v / TAPE ON REEL / 2000 PCS 1.3 KG 36*35*7 CM |
| MT41K256M16TW-107:P TR | MICRON/美光 | 2.320 | 18,00 | DDR3L SDRAM / 256MX16 DDR3/L / FBGA-96(8*14mm) / FBGA-96 / 1866 Mbps / 0°C~+85°C / RoHS / 1.35v / TAPE ON REEL / 2000 PCS |
| MT41K256M16TW-107:P TR | MICRON/美光 | 2.318 | 14,00 | DDR3L SDRAM / 256MX16 DDR3/L / FBGA-96(8*14mm) / FBGA-96 / 1866 Mbps / 0°C~+85°C / RoHS / 1.35v / TAPE ON REEL / 2000 PCS |
| MT41K256M16TW-107 IT:P TR | MICRON/美光 | 2.314 | 10,00 | DDR3L SDRAM / 256MX16 DDR3/L / FBGA-96(8*14mm) / FBGA-96 / 1866 Mbps / -40°C~+95°C / RoHS / 1.35v / TAPE ON REEL / 2000 PCS 1.85 KG 36*34*7 CM |
| MT41K256M16TW-107 IT:P TR | MICRON/美光 | 2.312 | 22,00 | DDR3L SDRAM / 256MX16 DDR3/L / FBGA-96(8*14mm) / FBGA-96 / 1866 Mbps / -40°C~+95°C / RoHS / 1.35v / TAPE ON REEL / 2000 PCS 1.85 KG 36*34*7 CM |
| MT41K256M16TW-107:P TR | MICRON/美光 | 2.308 | 4,00 | DDR3L SDRAM / 256MX16 DDR3/L / FBGA-96(8*14mm) / FBGA-96 / 1866 Mbps / 0°C~+85°C / RoHS / 1.35v / TAPE ON REEL / 2000 PCS |
| MT41K256M16TW-107 IT:P TR | MICRON/美光 | 2.308 | 30,00 | DDR3L SDRAM / 256MX16 DDR3/L / FBGA-96(8*14mm) / FBGA-96 / 1866 Mbps / -40°C~+95°C / RoHS / 1.35v / TAPE ON REEL / 2000 PCS 1.85 KG 36*34*7 CM |
| MT41K256M16TW-107 IT:P TR | MICRON/美光 | 2.306 | 6,00 | DDR3L SDRAM / 256MX16 DDR3/L / FBGA-96(8*14mm) / FBGA-96 / 1866 Mbps / -40°C~+95°C / RoHS / 1.35v / TAPE ON REEL / 2000 PCS 1.85 KG 36*34*7 CM |
| MT41K512M16VRP-107 IT:PTR | MICRON/美光 | 2.146 | 8,00 | DDR3L SDRAM / 512MX16 DDR3L / FBGA-96 / 1866 Mbps / 0°C~+85°C / RoHS / 1.35v / TAPE ON REEL / EOL / 2000 PCS |
| M29W320DB70N6E | MICRON/美光 | 1.832 | 2,30 | FLASH-NOR / 29LV320 BOTTOM / TSOP-48 / 90 NS / -40°C~+85°C / RoHS / 2.7V~3.6V / TRAY / EOL / 576 PCS |
| MT29F4G08ABBEAH4:E | MICRON/美光 | 1.742 | 14,00 | FLASH-NAND / 512MX8 NAND SLC / H4 = 63-ball VFBGA (9mm x 11mm x1.0mm) / VFBGA-63 / 25 ns / 0°C~+70°C / RoHS / 1.8 V / TAPE ON REEL / EOL / 1000 PCS 0.86 KG 37*34*6* CM |
| MT45W2MW16PGA-70IT | MICRON/美光 | 1.442 | 12,00 | SRAM-PSEUDO / 2MX16 PSEUDO / 48 BALL 6 X 8MM / FBGA-48 / 70 NS / -40°C~+85°C / RoHS / 1.8 V / TAPE ON REEL / EOL / 1000 PCS |
| MT45W2MW16PGA-70IT | MICRON/美光 | 1.440 | 8,00 | SRAM-PSEUDO / 2MX16 PSEUDO / 48 BALL 6 X 8MM / FBGA-48 / 70 NS / -40°C~+85°C / RoHS / 1.8 V / TAPE ON REEL / EOL / 1000 PCS |
| MT45W2MW16PGA-70IT | MICRON/美光 | 1.440 | 4,00 | SRAM-PSEUDO / 2MX16 PSEUDO / 48 BALL 6 X 8MM / FBGA-48 / 70 NS / -40°C~+85°C / RoHS / 1.8 V / TAPE ON REEL / EOL / 1000 PCS |
| MT45W2MW16PGA-70IT | MICRON/美光 | 1.438 | 4,00 | SRAM-PSEUDO / 2MX16 PSEUDO / 48 BALL 6 X 8MM / FBGA-48 / 70 NS / -40°C~+85°C / RoHS / 1.8 V / TAPE ON REEL / EOL / 1000 PCS |
| MT45W2MW16PGA-70IT | MICRON/美光 | 1.430 | 6,00 | SRAM-PSEUDO / 2MX16 PSEUDO / 48 BALL 6 X 8MM / FBGA-48 / 70 NS / -40°C~+85°C / RoHS / 1.8 V / TAPE ON REEL / EOL / 1000 PCS |
| MT45W2MW16PGA-70IT | MICRON/美光 | 1.430 | 3,00 | SRAM-PSEUDO / 2MX16 PSEUDO / 48 BALL 6 X 8MM / FBGA-48 / 70 NS / -40°C~+85°C / RoHS / 1.8 V / TAPE ON REEL / EOL / 1000 PCS |
| MT45W2MW16PGA-70IT | MICRON/美光 | 1.430 | 4,00 | SRAM-PSEUDO / 2MX16 PSEUDO / 48 BALL 6 X 8MM / FBGA-48 / 70 NS / -40°C~+85°C / RoHS / 1.8 V / TAPE ON REEL / EOL / 1000 PCS |
| MT45W2MW16PGA-70IT | MICRON/美光 | 1.428 | 12,00 | SRAM-PSEUDO / 2MX16 PSEUDO / 48 BALL 6 X 8MM / FBGA-48 / 70 NS / -40°C~+85°C / RoHS / 1.8 V / TAPE ON REEL / EOL / 1000 PCS |
| MT45W2MW16PGA-70IT | MICRON/美光 | 1.422 | 8,00 | SRAM-PSEUDO / 2MX16 PSEUDO / 48 BALL 6 X 8MM / FBGA-48 / 70 NS / -40°C~+85°C / RoHS / 1.8 V / TAPE ON REEL / EOL / 1000 PCS |
| EDE5116AJSE-6ELI-E | MICRON/美光 | 1.051 | 22,79 | DDR2 SDRAM / 32MX16 DDR2 / DDR2-667 (5-5-5) / FBGA-84 / 333 MHZ / -40°C~+95°C / RoHS / 1.8 V / TRAY / EOL / 1900 PCS 2.3 KG 37*18*11 CM |
| EDE5116AJSE-6ELI-E | MICRON/美光 | 1.048 | 27,05 | DDR2 SDRAM / 32MX16 DDR2 / DDR2-667 (5-5-5) / FBGA-84 / 333 MHZ / -40°C~+95°C / RoHS / 1.8 V / TRAY / EOL / 1900 PCS 2.3 KG 37*18*11 CM |
| EDE5116AJSE-6ELI-E | MICRON/美光 | 1.043 | 6,67 | DDR2 SDRAM / 32MX16 DDR2 / DDR2-667 (5-5-5) / FBGA-84 / 333 MHZ / -40°C~+95°C / RoHS / 1.8 V / TRAY / EOL / 1900 PCS 2.3 KG 37*18*11 CM |
| EDE5116AJSE-6ELI-E | MICRON/美光 | 1.042 | 2,38 | DDR2 SDRAM / 32MX16 DDR2 / DDR2-667 (5-5-5) / FBGA-84 / 333 MHZ / -40°C~+95°C / RoHS / 1.8 V / TRAY / EOL / 1900 PCS 2.3 KG 37*18*11 CM |
| EDD2516AETA-5B-E | MICRON/美光 | 1.035 | 16,20 | DDR1 SDRAM / 16MX16 DDR1 / TRAY/1080 / TSOP2(66) / 200 MHZ / 0°C~+70°C / RoHS / 2.5 V / TAPE ON REEL / 1080 PCS 2.0 KG 38*18*11 CM |
| EDE1116ACSE-6ELI-E | MICRON/美光 | 1.013 | 19,99 | DDR2 SDRAM / 64MX16 DDR2 / LOW POWER / FBGA-84 / 333 MHZ / -40°C~+95°C / RoHS / 1.8 V / TRAY / EOL / 855 PCS 1.21 KG 37*18*8 CM |
| EDE1116ACSE-6ELI-E | MICRON/美光 | 1.011 | 3,51 | DDR2 SDRAM / 64MX16 DDR2 / LOW POWER / FBGA-84 / 333 MHZ / -40°C~+95°C / RoHS / 1.8 V / TRAY / EOL / 855 PCS 1.21 KG 37*18*8 CM |
| MT46V16M16FG-6:F | MICRON/美光 | 908 | 4,00 | DDR1 SDRAM / 16MX16 DDR1 / DDR1-333 / FBGA-60 / 166 MHZ / 0°C~+85°C / Leaded / 2.5 V / TRAY / EOL / 1000 PCS 1.5 KG 20*12*37 CM |
| MT46V16M16FG-6:F | MICRON/美光 | 902 | 4,00 | DDR1 SDRAM / 16MX16 DDR1 / DDR1-333 / FBGA-60 / 166 MHZ / 0°C~+85°C / Leaded / 2.5 V / TRAY / EOL / 1000 PCS 1.5 KG 20*12*37 CM |
| EDS2532AABH-1AR2-E | MICRON/美光 | 839 | 3,34 | SDRAM / 8MX32 SD / FBGA-90 / 100 MHz / 0°C~+70°C / RoHS / 3.3 V / TRAY / EOL / 680 PCS 1.0 KG 37*17.5*7.5 CM |
| EDS2532AABH-1AR2-E | MICRON/美光 | 838 | 3,02 | SDRAM / 8MX32 SD / FBGA-90 / 100 MHz / 0°C~+70°C / RoHS / 3.3 V / TRAY / EOL / 680 PCS 1.0 KG 37*17.5*7.5 CM |
| EDS2532AABH-1AR2-E | MICRON/美光 | 836 | 2,06 | SDRAM / 8MX32 SD / FBGA-90 / 100 MHz / 0°C~+70°C / RoHS / 3.3 V / TRAY / EOL / 680 PCS 1.0 KG 37*17.5*7.5 CM |
| MT46V16M16FG-6:F | MICRON/美光 | 836 | 5,00 | DDR1 SDRAM / 16MX16 DDR1 / DDR1-333 / FBGA-60 / 166 MHZ / 0°C~+85°C / Leaded / 2.5 V / TRAY / EOL / 1000 PCS 1.5 KG 20*12*37 CM |
| EDS2532AABH-1AR2-E | MICRON/美光 | 835 | 3,44 | SDRAM / 8MX32 SD / FBGA-90 / 100 MHz / 0°C~+70°C / RoHS / 3.3 V / TRAY / EOL / 680 PCS 1.0 KG 37*17.5*7.5 CM |
| EDS2532AABH-6B-E | MICRON/美光 | 833 | 4,06 | SDRAM / 8MX32 SD / FBGA-90 / 166 MHZ / 0°C~+70°C / RoHS / 3.3 V / TRAY / 1045 PCS 1.3 KG 37*17.5*8 CM |
| EDS2532AABH-1AR2-E | MICRON/美光 | 833 | 2,10 | SDRAM / 8MX32 SD / FBGA-90 / 100 MHz / 0°C~+70°C / RoHS / 3.3 V / TRAY / EOL / 680 PCS 1.0 KG 37*17.5*7.5 CM |
| EDS2532AABH-1AR2-E | MICRON/美光 | 832 | 3,08 | SDRAM / 8MX32 SD / FBGA-90 / 100 MHz / 0°C~+70°C / RoHS / 3.3 V / TRAY / EOL / 680 PCS 1.0 KG 37*17.5*7.5 CM |
| EDS2532AABH-1AR2-E | MICRON/美光 | 831 | 3,80 | SDRAM / 8MX32 SD / FBGA-90 / 100 MHz / 0°C~+70°C / RoHS / 3.3 V / TRAY / EOL / 680 PCS 1.0 KG 37*17.5*7.5 CM |
| EDS2532AABH-1AR2-E | MICRON/美光 | 830 | 3,40 | SDRAM / 8MX32 SD / FBGA-90 / 100 MHz / 0°C~+70°C / RoHS / 3.3 V / TRAY / EOL / 680 PCS 1.0 KG 37*17.5*7.5 CM |
| EDS2532AABH-1AR2-E | MICRON/美光 | 829 | 3,16 | SDRAM / 8MX32 SD / FBGA-90 / 100 MHz / 0°C~+70°C / RoHS / 3.3 V / TRAY / EOL / 680 PCS 1.0 KG 37*17.5*7.5 CM |
| MT46V32M4TG-75:D | MICRON/美光 | 828 | 4,00 | DDR1 SDRAM / 32MX4 DDR1 / DDR1-266 / TSOP-66 / 133 MHZ / 0°C~+85°C / Leaded / 2.5 V / TRAY / 1000 PCS 2.69 KG 37*19*12 CM |
| EDS2532AABH-1AR2-E | MICRON/美光 | 827 | 2,73 | SDRAM / 8MX32 SD / FBGA-90 / 100 MHz / 0°C~+70°C / RoHS / 3.3 V / TRAY / EOL / 680 PCS 1.0 KG 37*17.5*7.5 CM |
| EDS2532AABH-1AR2-E | MICRON/美光 | 826 | 2,02 | SDRAM / 8MX32 SD / FBGA-90 / 100 MHz / 0°C~+70°C / RoHS / 3.3 V / TRAY / EOL / 680 PCS 1.0 KG 37*17.5*7.5 CM |
| EDS2532AABH-1AR2-E | MICRON/美光 | 822 | 2,70 | SDRAM / 8MX32 SD / FBGA-90 / 100 MHz / 0°C~+70°C / RoHS / 3.3 V / TRAY / EOL / 680 PCS 1.0 KG 37*17.5*7.5 CM |
| EDD1216AATA-6B-E | MICRON/美光 | 822 | 5,07 | DDR1 SDRAM / 8MX16 DDR1 / TSOP2(66) / 166 MHZ / 0°C~+70°C / RoHS / 2.5 V / TRAY / 540 PCS 1.0 KG 37*17.5*7.5 CM |
| EDS2532AABH-1AR2-E | MICRON/美光 | 820 | 2,82 | SDRAM / 8MX32 SD / FBGA-90 / 100 MHz / 0°C~+70°C / RoHS / 3.3 V / TRAY / EOL / 680 PCS 1.0 KG 37*17.5*7.5 CM |
| EDS2532AABH-1AR2-E | MICRON/美光 | 819 | 2,90 | SDRAM / 8MX32 SD / FBGA-90 / 100 MHz / 0°C~+70°C / RoHS / 3.3 V / TRAY / EOL / 680 PCS 1.0 KG 37*17.5*7.5 CM |
| EDS2532AABH-6B-E | MICRON/美光 | 817 | 23,73 | SDRAM / 8MX32 SD / FBGA-90 / 166 MHZ / 0°C~+70°C / RoHS / 3.3 V / TRAY / 1045 PCS 1.3 KG 37*17.5*8 CM |
| EDS2532AABH-1AR2-E | MICRON/美光 | 817 | 3,79 | SDRAM / 8MX32 SD / FBGA-90 / 100 MHz / 0°C~+70°C / RoHS / 3.3 V / TRAY / EOL / 680 PCS 1.0 KG 37*17.5*7.5 CM |
| EDS2532AABH-75TT-E | MICRON/美光 | 816 | 2,99 | SDRAM / 8MX32 SD / FBGA-90 / 133 MHZ / -20℃~+85 ℃ / RoHS / 3.3 V / TRAY / 1045 PCS 1.25 KG 37*8*8 CM |
| EDS2532AABH-1AR2-E | MICRON/美光 | 816 | 3,42 | SDRAM / 8MX32 SD / FBGA-90 / 100 MHz / 0°C~+70°C / RoHS / 3.3 V / TRAY / EOL / 680 PCS 1.0 KG 37*17.5*7.5 CM |
| EDD1216AASE-6B-E | MICRON/美光 | 812 | 44,93 | DDR1 SDRAM / 8MX16 DDR1 / FBGA-60 / 166 MHZ / 0°C~+70°C / RoHS / 2.5 V / TRAY / 1045 PCS 1.3 KG 37*17.5*7.5 CM |
| EDS2532CABH-6B-E | MICRON/美光 | 812 | 4,41 | SDRAM / 8MX32 SD / FBGA-90 / 166 MHZ / 0°C~+70°C / RoHS / 2.5 V / TRAY / 1045 PCS 1.2 KG 37*17.5*7.5 CM |
| EDS2532AABH-1AR2-E | MICRON/美光 | 811 | 2,37 | SDRAM / 8MX32 SD / FBGA-90 / 100 MHz / 0°C~+70°C / RoHS / 3.3 V / TRAY / EOL / 680 PCS 1.0 KG 37*17.5*7.5 CM |
| MT46V16M8TG-6T:D | MICRON/美光 | 810 | 3,00 | DDR1 SDRAM / 16MX8 DDR1 / DDR1-333 / TSOP-66 / 0°C~+85°C / Leaded / 2.5 V / TAPE ON REEL / 1000 PCS 1.54 KG 37*35*8 CM |
| EDS2532CABH-6B-E | MICRON/美光 | 809 | 5,58 | SDRAM / 8MX32 SD / FBGA-90 / 166 MHZ / 0°C~+70°C / RoHS / 2.5 V / TRAY / 1045 PCS 1.2 KG 37*17.5*7.5 CM |
| EDS2532AABH-1AR2-E | MICRON/美光 | 808 | 2,02 | SDRAM / 8MX32 SD / FBGA-90 / 100 MHz / 0°C~+70°C / RoHS / 3.3 V / TRAY / EOL / 680 PCS 1.0 KG 37*17.5*7.5 CM |
| MT46V16M8TG-6T:D | MICRON/美光 | 808 | 9,00 | DDR1 SDRAM / 16MX8 DDR1 / DDR1-333 / TSOP-66 / 0°C~+85°C / Leaded / 2.5 V / TAPE ON REEL / 1000 PCS 1.54 KG 37*35*8 CM |
| EDS1232AASE-75L-E | MICRON/美光 | 807 | 4,96 | SDRAM / 4MX32 SD / PC133 / FBGA-90 / 133 MHZ / 0°C~+70°C / RoHS / 3.3 V / TRAY / 1045 PCS 1.25 KG 37*8*8 CM |
| EDS1232CASE-1A-E | MICRON/美光 | 807 | 9,15 | SDRAM / 4MX32 SD / 90-BALL FBGA (μBGA) / FBGA-90 / 100 MHz / 0°C~+70°C / RoHS / 2.5 V / TRAY / 1045 PCS 1.2 KG 37.5*17.5*7.5 CM |
| EDD1216AATA-6B-E | MICRON/美光 | 807 | 3,30 | DDR1 SDRAM / 8MX16 DDR1 / TSOP2(66) / 166 MHZ / 0°C~+70°C / RoHS / 2.5 V / TRAY / 540 PCS 1.0 KG 37*17.5*7.5 CM |
| EDS2532AABH-1AR2-E | MICRON/美光 | 804 | 2,28 | SDRAM / 8MX32 SD / FBGA-90 / 100 MHz / 0°C~+70°C / RoHS / 3.3 V / TRAY / EOL / 680 PCS 1.0 KG 37*17.5*7.5 CM |
| EDS1216GABH-10-E | MICRON/美光 | 804 | 6,08 | SDRAM / 8MX16 SD / FBGA-54 / 100 MHZ / 0°C~+70°C / RoHS / 3.3 V / 37*18*7 CM |
| EDS2532CABH-6B-E | MICRON/美光 | 751 | 4,28 | SDRAM / 8MX32 SD / FBGA-90 / 166 MHZ / 0°C~+70°C / RoHS / 2.5 V / TRAY / 1045 PCS 1.2 KG 37*17.5*7.5 CM |
| EDS1232CASE-1A-E | MICRON/美光 | 750 | 17,27 | SDRAM / 4MX32 SD / 90-BALL FBGA (μBGA) / FBGA-90 / 100 MHz / 0°C~+70°C / RoHS / 2.5 V / TRAY / 1045 PCS 1.2 KG 37.5*17.5*7.5 CM |
| MT46V64M4FG-6:G | MICRON/美光 | 750 | 6,00 | DDR1 SDRAM / 64MX4 DDR1 / FBGA-60 / 167 MHZ / 0°C~+85°C / Leaded / 2.5 V / TAPE ON REEL / 1000 PCS 1.0 KG 37*8*35 CM |
| EDS1232CASE-1A-E | MICRON/美光 | 749 | 12,92 | SDRAM / 4MX32 SD / 90-BALL FBGA (μBGA) / FBGA-90 / 100 MHz / 0°C~+70°C / RoHS / 2.5 V / TRAY / 1045 PCS 1.2 KG 37.5*17.5*7.5 CM |
| EDS2532AABH-6B-E | MICRON/美光 | 748 | 4,73 | SDRAM / 8MX32 SD / FBGA-90 / 166 MHZ / 0°C~+70°C / RoHS / 3.3 V / TRAY / 1045 PCS 1.3 KG 37*17.5*8 CM |
| EDS2532AABH-6B-E | MICRON/美光 | 747 | 4,18 | SDRAM / 8MX32 SD / FBGA-90 / 166 MHZ / 0°C~+70°C / RoHS / 3.3 V / TRAY / 1045 PCS 1.3 KG 37*17.5*8 CM |
| EDS1216GABH-10-E | MICRON/美光 | 743 | 4,28 | SDRAM / 8MX16 SD / FBGA-54 / 100 MHZ / 0°C~+70°C / RoHS / 3.3 V / 37*18*7 CM |
| MT46V64M4FG-6:G | MICRON/美光 | 740 | 6,00 | DDR1 SDRAM / 64MX4 DDR1 / FBGA-60 / 167 MHZ / 0°C~+85°C / Leaded / 2.5 V / TAPE ON REEL / 1000 PCS 1.0 KG 37*8*35 CM |
| EDS1216GABH-10-E | MICRON/美光 | 718 | 4,20 | SDRAM / 8MX16 SD / FBGA-54 / 100 MHZ / 0°C~+70°C / RoHS / 3.3 V / 37*18*7 CM |
| MT46V8M16TG-6T:D TR | MICRON/美光 | 718 | 24,00 | DDR1 SDRAM / 8MX16 DDR1 / TSOP-66 / 166 MHZ / 0°C~+85°C / Leaded / 2.5 V / TAPE ON REEL / EOL / 1000 PCS 1.54 KG 37*35*8 CM |
| MT46V8M16TG-6T:D TR | MICRON/美光 | 716 | 5,00 | DDR1 SDRAM / 8MX16 DDR1 / TSOP-66 / 166 MHZ / 0°C~+85°C / Leaded / 2.5 V / TAPE ON REEL / EOL / 1000 PCS 1.54 KG 37*35*8 CM |
| MT46V16M8P-6T:D | MICRON/美光 | 716 | 4,00 | DDR1 SDRAM / 16MX8 DDR1 / DDR1-333 / TSOP-66 / 0°C~+85°C / RoHS / 2.5 V / 1000 PCS 1.6 KG 37*8*35 CM |
| L128M16PC133-E | MICRON/美光 | 714 | 5,49 | SDRAM / 8MX16 SD / FBGA-54 / PC-133 / RoHS / 3.3 V / TRAY / 540 PCS 1.4 KG 37*17.5*7.5 CM |
| MT46V32M4TG-6T:D | MICRON/美光 | 714 | 5,00 | DDR1 SDRAM / 32MX4 DDR1 / TSOP-66 / 167 MHZ / 0°C~+85°C / Leaded / 2.5 V / TAPE ON REEL / 1000 PCS 1.54 KG 37*35*8 CM |
| MT46V32M4TG-6T:D | MICRON/美光 | 712 | 20,00 | DDR1 SDRAM / 32MX4 DDR1 / TSOP-66 / 167 MHZ / 0°C~+85°C / Leaded / 2.5 V / TAPE ON REEL / 1000 PCS 1.54 KG 37*35*8 CM |
| MT46V8M16TG-6T:D | MICRON/美光 | 708 | 3,97 | DDR1 SDRAM / 8MX16 DDR1 / TSOP-66 / 167 MHZ / 0°C~+85°C / Leaded / 2.5 V / TRAY / 1000 PCS 2.67 KG 37*19*12 CM |
| MT46V8M16TG-6T:D | MICRON/美光 | 706 | 4,00 | DDR1 SDRAM / 8MX16 DDR1 / TSOP-66 / 167 MHZ / 0°C~+85°C / Leaded / 2.5 V / TRAY / 1000 PCS 2.67 KG 37*19*12 CM |
| EDS2508APTA-7A-E | MICRON/美光 | 704 | 2,29 | SDRAM / 32MX8 SD / TSOP2(54) / 133 MHZ / 0°C~+70°C / RoHS / 3.3 V / 540 PCS 1.43 KG 37*8*8 CM |
| EDD1216AASE-6B-E | MICRON/美光 | 642 | 10,71 | DDR1 SDRAM / 8MX16 DDR1 / FBGA-60 / 166 MHZ / 0°C~+70°C / RoHS / 2.5 V / TRAY / 1045 PCS 1.3 KG 37*17.5*7.5 CM |
| MT46V32M4P-75:DTR | MICRON/美光 | 642 | 5,00 | DDR1 SDRAM / 32MX4 DDR1 / TSOP-66 / 133 MHZ / 0°C~+85°C / RoHS / 2.5 V / TAPE ON REEL / 1000 PCS |
| MT46V64M4P-6T:G | MICRON/美光 | 642 | 14,20 | DDR1 SDRAM / 64MX4 DDR1 / TSOP-66 / 167 MHZ / 0°C~+85°C / RoHS / 2.5 V / TAPE ON REEL / 1000 PCS 1.6 KG 37*35*8 CM |
| EDS5104ABTA-75 | MICRON/美光 | 620 | 4,21 | SDRAM / 128MX4 SD / TSOP2(54) / 133 MHZ / 0°C~+85°C / Leaded / 3.3 V / TRAY / EOL / 540 PCS 1.5 KG 38*18*8 CM |
| MT46V16M8TG-5B:D | MICRON/美光 | 614 | 4,00 | DDR1 SDRAM / 16MX8 DDR1 / DDR1-400 / TSOP-66 / 200 MHZ / 0°C~+85°C / Leaded / 2.5 V / 1000 PCS 1.6 KG 37*8*35 CM |
| MT46V16M8TG-75:DTR | MICRON/美光 | 530 | 10,00 | DDR1 SDRAM / 16MX8 DDR1 / TSOP-66 / 133 MHZ / 0°C~+85°C / Leaded / 2.5 V / TAPE ON REEL / 1000 PCS |
| EDS5104ABTA-75 | MICRON/美光 | 526 | 4,12 | SDRAM / 128MX4 SD / TSOP2(54) / 133 MHZ / 0°C~+85°C / Leaded / 3.3 V / TRAY / EOL / 540 PCS 1.5 KG 38*18*8 CM |
| EDS5104ABTA-75 | MICRON/美光 | 523 | 8,00 | SDRAM / 128MX4 SD / TSOP2(54) / 133 MHZ / 0°C~+85°C / Leaded / 3.3 V / TRAY / EOL / 540 PCS 1.5 KG 38*18*8 CM |
| EDS5104ABTA-75 | MICRON/美光 | 522 | 4,00 | SDRAM / 128MX4 SD / TSOP2(54) / 133 MHZ / 0°C~+85°C / Leaded / 3.3 V / TRAY / EOL / 540 PCS 1.5 KG 38*18*8 CM |
| EDS5104ABTA-75 | MICRON/美光 | 521 | 2,80 | SDRAM / 128MX4 SD / TSOP2(54) / 133 MHZ / 0°C~+85°C / Leaded / 3.3 V / TRAY / EOL / 540 PCS 1.5 KG 38*18*8 CM |
| EDS5104ABTA-75 | MICRON/美光 | 519 | 10,00 | SDRAM / 128MX4 SD / TSOP2(54) / 133 MHZ / 0°C~+85°C / Leaded / 3.3 V / TRAY / EOL / 540 PCS 1.5 KG 38*18*8 CM |
| EDS5104ABTA-75 | MICRON/美光 | 515 | 6,00 | SDRAM / 128MX4 SD / TSOP2(54) / 133 MHZ / 0°C~+85°C / Leaded / 3.3 V / TRAY / EOL / 540 PCS 1.5 KG 38*18*8 CM |
| EDS5104ABTA-75 | MICRON/美光 | 514 | 10,64 | SDRAM / 128MX4 SD / TSOP2(54) / 133 MHZ / 0°C~+85°C / Leaded / 3.3 V / TRAY / EOL / 540 PCS 1.5 KG 38*18*8 CM |
| MT46V16M8TG-6T IT:DTR | MICRON/美光 | 512 | 3,00 | DDR1 SDRAM / 16MX8 DDR1 / TSOP-66 / -40°C~+85°C / Leaded / 2.5 V / TAPE ON REEL / 1000 PCS 1.54 KG 37*35*8 CM |
| EDS5104ABTA-75 | MICRON/美光 | 510 | 4,00 | SDRAM / 128MX4 SD / TSOP2(54) / 133 MHZ / 0°C~+85°C / Leaded / 3.3 V / TRAY / EOL / 540 PCS 1.5 KG 38*18*8 CM |
| EDS5104ABTA-75 | MICRON/美光 | 504 | 5,62 | SDRAM / 128MX4 SD / TSOP2(54) / 133 MHZ / 0°C~+85°C / Leaded / 3.3 V / TRAY / EOL / 540 PCS 1.5 KG 38*18*8 CM |
| M29F800DT-55N1 | MICRON/美光 | 449 | 4,03 | FLASH-NOR / 29F800 TOP / TSOP-48 / 55 NS / 0°C~+70°C / Leaded / 5.0 V / TRAY / EOL / 576 PCS 2.0 KG 40*20*10 CM |
| EDS5104ABTA-75 | MICRON/美光 | 440 | 5,40 | SDRAM / 128MX4 SD / TSOP2(54) / 133 MHZ / 0°C~+85°C / Leaded / 3.3 V / TRAY / EOL / 540 PCS 1.5 KG 38*18*8 CM |
| M29DW323DT-70N6 | MICRON/美光 | 434 | 13,82 | FLASH-NOR / 29DL323 TOP / TSOP-48 / 70 NS / -40°C~+85°C / Leaded / 2.7V~3.6V / TRAY / 576 PCS 1.87 KG 40*20*11 CM |
| M29DW323DT-70N6 | MICRON/美光 | 432 | 4,61 | FLASH-NOR / 29DL323 TOP / TSOP-48 / 70 NS / -40°C~+85°C / Leaded / 2.7V~3.6V / TRAY / 576 PCS 1.87 KG 40*20*11 CM |
| EDS5104ABTA-75 | MICRON/美光 | 430 | 4,32 | SDRAM / 128MX4 SD / TSOP2(54) / 133 MHZ / 0°C~+85°C / Leaded / 3.3 V / TRAY / EOL / 540 PCS 1.5 KG 38*18*8 CM |
| EDS5104ABTA-75 | MICRON/美光 | 425 | 5,40 | SDRAM / 128MX4 SD / TSOP2(54) / 133 MHZ / 0°C~+85°C / Leaded / 3.3 V / TRAY / EOL / 540 PCS 1.5 KG 38*18*8 CM |
| M29F002BT-70N1T | MICRON/美光 | 333 | 5,93 | FLASH-NOR / 29F002 TOP / TSOP-32 / 70 NS / 0°C~+70°C / Leaded / 5.0 V / TAPE ON REEL / 1500 PCS 1.39 KG 35*34*4 CM |
| M29F040B-120K1 | MICRON/美光 | 116 | 31,71 | FLASH-NOR / 29F040 / PLCC-32 / 120 NS / 0°C~+70°C / Leaded / 5.0 V / TUBE / 320 PCS 0.5 KG |
| MT28F400B5WG-8B | MICRON/美光 | 112 | 4,00 | FLASH-NOR / 28F400 / TSOP-48 / 80 NS / 0°C~+70°C / Leaded / 5.0 V / TAPE ON REEL / EOL / 1000 PCS 1.5 KG 37*35*8 CM |
| MT28F400B5WG-8B | MICRON/美光 | 110 | 7,00 | FLASH-NOR / 28F400 / TSOP-48 / 80 NS / 0°C~+70°C / Leaded / 5.0 V / TAPE ON REEL / EOL / 1000 PCS 1.5 KG 37*35*8 CM |
| MT28F400B5WG-8BTR | MICRON/美光 | 110 | 21,70 | FLASH-NOR / 28F400 / TSOP-48 / 0°C~+70°C / Leaded / 5.0 V / TAPE ON REEL |
| M29F040B-70K6 | MICRON/美光 | 107 | 2,88 | FLASH-NOR / 29F040 / PLCC-32 / 70 NS / -40°C~+85°C / Leaded / 5.0 V / TUBE / 320 PCS |
| MT4LC8M8E1TG-5 | MICRON/美光 | 106 | 171,00 | DRAM / 8MX8 FP / 32-PIN TSOP (400 MIL) / TSOP2(32) / 50 NS / 0°C~+70°C / Leaded / 3.3 V / T&R / 1000 PCS |
| MT4LC8M8E1TG-5 | MICRON/美光 | 104 | 570,00 | DRAM / 8MX8 FP / 32-PIN TSOP (400 MIL) / TSOP2(32) / 50 NS / 0°C~+70°C / Leaded / 3.3 V / T&R / 1000 PCS |
| MT4LC8M8E1TG-5 | MICRON/美光 | 104 | 171,00 | DRAM / 8MX8 FP / 32-PIN TSOP (400 MIL) / TSOP2(32) / 50 NS / 0°C~+70°C / Leaded / 3.3 V / T&R / 1000 PCS |
| MT4LC8M8E1TG-5 | MICRON/美光 | 102 | 171,00 | DRAM / 8MX8 FP / 32-PIN TSOP (400 MIL) / TSOP2(32) / 50 NS / 0°C~+70°C / Leaded / 3.3 V / T&R / 1000 PCS |
| MT4LC8M8E1TG-5 | MICRON/美光 | 102 | 162,00 | DRAM / 8MX8 FP / 32-PIN TSOP (400 MIL) / TSOP2(32) / 50 NS / 0°C~+70°C / Leaded / 3.3 V / T&R / 1000 PCS |
| M29F400BT-90N1 | MICRON/美光 | 51 | 5,07 | FLASH-NOR / 29F400 TOP / TSOP-48 / 90 NS / 0°C~+70°C / Leaded / 5.0 V / TRAY / 576 PCS 1.7 KG 40*20*11 CM |
| M29F102BB-35K1 | MICRON/美光 | 46 | 2,24 | FLASH-NOR / 29F1024 / PLCC-44 / 35 NS / 0°C~+70°C / Leaded / 5.0 V / TUBE / EOL / 1120 PCS 4.0 KG 56*12*8 CM |
| M29F102BB-35K1 | MICRON/美光 | 45 | 8,77 | FLASH-NOR / 29F1024 / PLCC-44 / 35 NS / 0°C~+70°C / Leaded / 5.0 V / TUBE / EOL / 1120 PCS 4.0 KG 56*12*8 CM |
| MT4C1M16C3TG-6 | MICRON/美光 | 42 | 3,00 | DRAM / 1MX16 FP / 400 MIL / TSOP2(44/50) / 60 NS / 0°C~+70°C / Leaded / 5.0 V / TAPE ON REEL / 1000 PCS 1.6 KG 37*35*8 CM |
| M29F200BT-70N1 | MICRON/美光 | 37 | 6,91 | FLASH-NOR / 29F200 TOP / TSOP-48 / 70 NS / 0°C~+70°C / Leaded / 5.0 V / TRAY / EOL / 576 PCS 1.0 KG 40*20*11 CM |
| M29F200BT-70N1 | MICRON/美光 | 32 | 9,79 | FLASH-NOR / 29F200 TOP / TSOP-48 / 70 NS / 0°C~+70°C / Leaded / 5.0 V / TRAY / EOL / 576 PCS 1.0 KG 40*20*11 CM |
| M29F200BT-70N1 | MICRON/美光 | 31 | 5,18 | FLASH-NOR / 29F200 TOP / TSOP-48 / 70 NS / 0°C~+70°C / Leaded / 5.0 V / TRAY / EOL / 576 PCS 1.0 KG 40*20*11 CM |
| M29F200BT-70N1 | MICRON/美光 | 30 | 4,61 | FLASH-NOR / 29F200 TOP / TSOP-48 / 70 NS / 0°C~+70°C / Leaded / 5.0 V / TRAY / EOL / 576 PCS 1.0 KG 40*20*11 CM |
| MT4C1M16C3TG-6 | MICRON/美光 | 28 | 4,00 | DRAM / 1MX16 FP / 400 MIL / TSOP2(44/50) / 60 NS / 0°C~+70°C / Leaded / 5.0 V / TAPE ON REEL / 1000 PCS 1.6 KG 37*35*8 CM |
| M29F200BT-70N1 | MICRON/美光 | 25 | 8,33 | FLASH-NOR / 29F200 TOP / TSOP-48 / 70 NS / 0°C~+70°C / Leaded / 5.0 V / TRAY / EOL / 576 PCS 1.0 KG 40*20*11 CM |
| M29W200BB-90M1 | MICRON/美光 | 11 | 8,64 | FLASH-NOR / 29LV200 BOTTOM / 525mm width / SOP-44 / 90 NS / 0°C~+70°C / Leaded / 2.7V~3.6V / TRAY / EOL / 240 PCS 2.0 KG 40*20*10,5 CM |
| M29W200BB-90M1 | MICRON/美光 | 9 | 17,76 | FLASH-NOR / 29LV200 BOTTOM / 525mm width / SOP-44 / 90 NS / 0°C~+70°C / Leaded / 2.7V~3.6V / TRAY / EOL / 240 PCS 2.0 KG 40*20*10,5 CM |
| 30905R | MIDCOM | 651 | 3,66 | OTHER / 30905 / Leaded |
| V62C5181024LL-35W | MOSEL-VITELIC | 42 | 12,21 | SRAM / 128KX8 SRAM / LOW LOW POWER / SOP-32 / 35 NS / 0°C~+70°C / Leaded / 5.0 V / TUBE / 2860 PCS 6.8 KG 54*24*8 CM |
| V62C518256LL-70TT | MOSEL-VITELIC | 7 | 27,00 | SRAM / 32KX8 SRAM / LOW LOW POWER / TSOP-28 / 70 NS / 0°C~+70°C / Leaded / 5.0 V / TAPE ON REEL / EOL / 1000 PCS 1.6 KG 34*36*4 CM |
| V62C518256L-35F | MOSEL-VITELIC | 9.932 | 11,25 | SRAM / 32KX8 SRAM / low power / SOP-28 / 35 NS / 0°C~+70°C / Leaded / 5.0 V / TUBE / 3750 PCS 6.7 KG 25*9*55 CM |
| MS6264L-70FC | MOSEL-VITELIC | 9.615 | 3,03 | SRAM / 8KX8 SRAM / 330 mil / SOP-28 / 70 NS / 0°C~+70°C / Leaded / 5.0 V / 55*24*9 CM |
| V62C518256LL-70T | MOSEL-VITELIC | 9.945 | 7,02 | SRAM / 32KX8 SRAM / LOW LOW POWER / TSOP-28 / 70 NS / 0°C~+70°C / Leaded / 5.0 V / TRAY / EOL / 2340 PCS 2.8 KG 34*17*9 CM |
| V62C518256LL-70T | MOSEL-VITELIC | 9.949 | 2,34 | SRAM / 32KX8 SRAM / LOW LOW POWER / TSOP-28 / 70 NS / 0°C~+70°C / Leaded / 5.0 V / TRAY / EOL / 2340 PCS 2.8 KG 34*17*9 CM |
| V62C518256LL-70T | MOSEL-VITELIC | 9.740 | 4,68 | SRAM / 32KX8 SRAM / LOW LOW POWER / TSOP-28 / 70 NS / 0°C~+70°C / Leaded / 5.0 V / TRAY / EOL / 2340 PCS 2.8 KG 34*17*9 CM |
| V62C518256LL-70T | MOSEL-VITELIC | 9.940 | 9,36 | SRAM / 32KX8 SRAM / LOW LOW POWER / TSOP-28 / 70 NS / 0°C~+70°C / Leaded / 5.0 V / TRAY / EOL / 2340 PCS 2.8 KG 34*17*9 CM |
| V62C518256LL-70T | MOSEL-VITELIC | 9.746 | 27,53 | SRAM / 32KX8 SRAM / LOW LOW POWER / TSOP-28 / 70 NS / 0°C~+70°C / Leaded / 5.0 V / TRAY / EOL / 2340 PCS 2.8 KG 34*17*9 CM |
| V62C51864L-35P | MOSEL-VITELIC | 9.740 | 20,48 | SRAM / 8KX8 SRAM / low power / PDIP-28 / 35 NS / 0°C~+70°C / Leaded / 5.0 V / TUBE / 650 PCS 5.0 KG 24*8*51 CM |
| V62C51864L-35P | MOSEL-VITELIC | 9.728 | 2,28 | SRAM / 8KX8 SRAM / low power / PDIP-28 / 35 NS / 0°C~+70°C / Leaded / 5.0 V / TUBE / 650 PCS 5.0 KG 24*8*51 CM |
| V62C51864L-35P | MOSEL-VITELIC | 9.732 | 3,90 | SRAM / 8KX8 SRAM / low power / PDIP-28 / 35 NS / 0°C~+70°C / Leaded / 5.0 V / TUBE / 650 PCS 5.0 KG 24*8*51 CM |
| V62C51864L-35P | MOSEL-VITELIC | 9.736 | 5,21 | SRAM / 8KX8 SRAM / low power / PDIP-28 / 35 NS / 0°C~+70°C / Leaded / 5.0 V / TUBE / 650 PCS 5.0 KG 24*8*51 CM |
| V62C518256L35FTP | MOSEL-VITELIC | 9.929 | 17,18 | SRAM / 32KX8 SRAM / low power / SOP-28 / 35 NS / 0°C~+70°C / Leaded / 5.0 V / TAPE ON REEL / 1000 PCS 1.6 KG 34*36*4 CM |
| V62C518256L35FTP | MOSEL-VITELIC | 9.945 | 3,00 | SRAM / 32KX8 SRAM / low power / SOP-28 / 35 NS / 0°C~+70°C / Leaded / 5.0 V / TAPE ON REEL / 1000 PCS 1.6 KG 34*36*4 CM |
| V62C518256L35FTP | MOSEL-VITELIC | 9.923 | 14,00 | SRAM / 32KX8 SRAM / low power / SOP-28 / 35 NS / 0°C~+70°C / Leaded / 5.0 V / TAPE ON REEL / 1000 PCS 1.6 KG 34*36*4 CM |
| CSBF503JF958 | MURATA/村田 | 311 | 9,45 | OTHER / CSBF503 / Leaded / BOX / 500 PCS |
| GRM39X7R102K50PT | MURATA/村田 | 0 | 60,00 | CAPACITOR / 39X7R102 / T266 / Leaded / TAPE ON REEL / 4000 PCS |
| TEMSVD1A107M-12R | NEC | 9.736 | 9,50 | OTHER / 1a107 / Leaded / TAPE ON REEL / 500 PCS |
| NRD107M10R12 | NEC | 9.736 | 19,50 | UNKNOWN / NRD107 / Leaded / TAPE ON REEL / 500 PCS |
| TEMSVD1A107M-12R | NEC | 97 | 10,00 | OTHER / 1a107 / Leaded / TAPE ON REEL / 500 PCS |
| LPC1754FBD80551 | NXP/恩智浦 | 2.225 | 3,57 | MCU-ARM / LPC1754 / 32-bit ARM Cortex-M3 MCU / LQFP-80 / 100 MHz / -40°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 595 PCS 0.0 KG 35*18*4 CM |
| LPC1754FBD80551 | NXP/恩智浦 | 2.222 | 4,17 | MCU-ARM / LPC1754 / 32-bit ARM Cortex-M3 MCU / LQFP-80 / 100 MHz / -40°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 595 PCS 0.0 KG 35*18*4 CM |
| LPC1754FBD80551 | NXP/恩智浦 | 2.222 | 4,17 | MCU-ARM / LPC1754 / 32-bit ARM Cortex-M3 MCU / LQFP-80 / 100 MHz / -40°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 595 PCS 0.0 KG 35*18*4 CM |
| LPC1765FBD100K | NXP/恩智浦 | 2.213 | 2,70 | MCU-ARM / LPC1765 / LQFP-100 / 120 MHz / -40°C~+85°C / RoHS / 2.4V~3.6V / TRAY / 450 PCS |
| PCA9557PW,118 | NXP/恩智浦 | 2.149 | 20,00 | INTERFACE / PCA9557 / TSSOP-16 / 400 KHz / -40°C~+85°C / RoHS / 2.3v~5.5v / TAPE ON REEL / 2500 PCS |
| LPC2214FBD144/01K | NXP/恩智浦 | 2.143 | 3,30 | MCU-ARM / LPC2214 / LQFP-144 / 60 MHz / -40°C~+85°C / RoHS / 1.8 V / TRAY / 300 PCS |
| LPC1765FBD100K | NXP/恩智浦 | 2.142 | 7,10 | MCU-ARM / LPC1765 / LQFP-100 / 120 MHz / -40°C~+85°C / RoHS / 2.4V~3.6V / TRAY / 450 PCS |
| LPC1765FBD100K | NXP/恩智浦 | 2.142 | 3,60 | MCU-ARM / LPC1765 / LQFP-100 / 120 MHz / -40°C~+85°C / RoHS / 2.4V~3.6V / TRAY / 450 PCS |
| LPC2214FBD144/01K | NXP/恩智浦 | 2.140 | 4,80 | MCU-ARM / LPC2214 / LQFP-144 / 60 MHz / -40°C~+85°C / RoHS / 1.8 V / TRAY / 300 PCS |
| LPC2214FBD144/01K | NXP/恩智浦 | 2.106 | 2,40 | MCU-ARM / LPC2214 / LQFP-144 / 60 MHz / -40°C~+85°C / RoHS / 1.8 V / TRAY / 300 PCS |
| LPC2214FBD144/01K | NXP/恩智浦 | 2.104 | 2,10 | MCU-ARM / LPC2214 / LQFP-144 / 60 MHz / -40°C~+85°C / RoHS / 1.8 V / TRAY / 300 PCS |
| LPC2214FBD144/01K | NXP/恩智浦 | 2.053 | 2,44 | MCU-ARM / LPC2214 / LQFP-144 / 60 MHz / -40°C~+85°C / RoHS / 1.8 V / TRAY / 300 PCS |
| PESD5V0S1BA,115 | NXP/恩智浦 | 1.148 | 3,00 | DIODE / 5V0S1 / SC76-2 / -65 C~+150 C / RoHS / TAPE ON REEL / 3000 PCS |
| 1PS79SB40 | NXP/恩智浦 | 1.140 | 3,00 | DIODE / 1PS79 / SC-79 2PIN / RoHS / TAPE ON REEL / 3000 PCS |
| BC817-16W | NXP/恩智浦 | 1.128 | 3,00 | TRANSISTOR / bc817 / SC-70 3PIN / RoHS / TAPE ON REEL / 3000 PCS |
| MC68302FC16C | NXP/恩智浦 | 122 | 14,04 | PROCESSOR / MC68302 / PQFP-132 / 16 MHz / 0°C~+70°C / RoHS / 5.0 V / TRAY / 36 PCS |
| HEF4052BT | NXP/恩智浦 | 9.310 | 3,00 | MULTIPLEXERS / HEF4052 / SO-16 / -40°C~+125°C / Leaded / 3.0V~15V / TAPE ON REEL / 1000 PCS |
| MSM54V16258BS-40TKR1 | OKI | 236 | 3,00 | DRAM / 256KX16 EDO / TSOP2(40/44) / 40 NS / 0°C~+70°C / Leaded / 3.3 V / TAPE ON REEL / 1000 PCS 1.15 KG 36*37*7 CM |
| NCP303LSN20T1G | ON-SEMICONDUCTOR/安森美 | 2.244 | 114,00 | VOLTAGE DETECTOR / NCP303 / SOT-23-5 / 0.5 UA / -40°C~+125°C / RoHS / 0.8V~10.0V / TAPE ON REEL / EOL / 3000 PCS |
| NCP303LSN20T1G | ON-SEMICONDUCTOR/安森美 | 2.244 | 3,00 | VOLTAGE DETECTOR / NCP303 / SOT-23-5 / 0.5 UA / -40°C~+125°C / RoHS / 0.8V~10.0V / TAPE ON REEL / EOL / 3000 PCS |
| NCP303LSN20T1G | ON-SEMICONDUCTOR/安森美 | 2.243 | 144,00 | VOLTAGE DETECTOR / NCP303 / SOT-23-5 / 0.5 UA / -40°C~+125°C / RoHS / 0.8V~10.0V / TAPE ON REEL / EOL / 3000 PCS |
| NCP303LSN20T1G | ON-SEMICONDUCTOR/安森美 | 2.242 | 30,00 | VOLTAGE DETECTOR / NCP303 / SOT-23-5 / 0.5 UA / -40°C~+125°C / RoHS / 0.8V~10.0V / TAPE ON REEL / EOL / 3000 PCS |
| LM7301SN1T1G | ON-SEMICONDUCTOR/安森美 | 2.242 | 3,00 | OP AMPS / LM7301 / SOT-23-5 / 4 MHz / -40°C~+85°C / RoHS / 1.8 V / TAPE ON REEL / 3000 PCS |
| 74LCX08MX | ON-SEMICONDUCTOR/安森美 | 2.239 | 25,00 | TTL / 74LCX08 / SOIC-14 / 24 mA / -40°C~+85°C / RoHS / 5.0 V / TAPE ON REEL / EOL / 2500 PCS |
| UAA2016PG | ON-SEMICONDUCTOR/安森美 | 2.237 | 8,25 | PMIC/POWER MANAGEMENT / UAA2016 / PDIP-8 / 150 mA / -20℃~+85 ℃ / RoHS / -4.5 V / TUBE |
| BC847BLT3G | ON-SEMICONDUCTOR/安森美 | 2.229 | 300,00 | TRANSISTOR / BC847 / SOT-23-3L / 300 MHZ / -65°C~+150°C / RoHS / 50V / TAPE ON REEL / 10000 PCS |
| NCL30160DR2G | ON-SEMICONDUCTOR/安森美 | 2.229 | 5,00 | LED DRIVER / NCL30160 / SOIC-8 / 1 A / -40°C~+125°C / RoHS / 6.3V~40V / TAPE ON REEL / EOL / 5000 PCS |
| BC847BLT3G | ON-SEMICONDUCTOR/安森美 | 2.227 | 250,00 | TRANSISTOR / BC847 / SOT-23-3L / 300 MHZ / -65°C~+150°C / RoHS / 50V / TAPE ON REEL / 10000 PCS |
| NCL30160DR2G | ON-SEMICONDUCTOR/安森美 | 2.227 | 20,00 | LED DRIVER / NCL30160 / SOIC-8 / 1 A / -40°C~+125°C / RoHS / 6.3V~40V / TAPE ON REEL / EOL / 5000 PCS |
| NCL30160DR2G | ON-SEMICONDUCTOR/安森美 | 2.226 | 15,00 | LED DRIVER / NCL30160 / SOIC-8 / 1 A / -40°C~+125°C / RoHS / 6.3V~40V / TAPE ON REEL / EOL / 5000 PCS |
| ESDR0502BT1G | ON-SEMICONDUCTOR/安森美 | 2.225 | 90,00 | ESD SUPPRESSOR / ESDR0502 / SC75-3 / 1 A / -55°C~+150°C / RoHS / 5.0 V / TAPE ON REEL / 3000 PCS |
| NCL30160DR2G | ON-SEMICONDUCTOR/安森美 | 2.225 | 5,00 | LED DRIVER / NCL30160 / SOIC-8 / 1 A / -40°C~+125°C / RoHS / 6.3V~40V / TAPE ON REEL / EOL / 5000 PCS |
| ESDR0502BT1G | ON-SEMICONDUCTOR/安森美 | 2.224 | 30,00 | ESD SUPPRESSOR / ESDR0502 / SC75-3 / 1 A / -55°C~+150°C / RoHS / 5.0 V / TAPE ON REEL / 3000 PCS |
| NCL30160DR2G | ON-SEMICONDUCTOR/安森美 | 2.224 | 2,50 | LED DRIVER / NCL30160 / SOIC-8 / 1 A / -40°C~+125°C / RoHS / 6.3V~40V / TAPE ON REEL / EOL / 5000 PCS |
| 74LCX08MX | ON-SEMICONDUCTOR/安森美 | 2.221 | 40,00 | TTL / 74LCX08 / SOIC-14 / 24 mA / -40°C~+85°C / RoHS / 5.0 V / TAPE ON REEL / EOL / 2500 PCS |
| 74LCX08MX | ON-SEMICONDUCTOR/安森美 | 2.219 | 10,00 | TTL / 74LCX08 / SOIC-14 / 24 mA / -40°C~+85°C / RoHS / 5.0 V / TAPE ON REEL / EOL / 2500 PCS |
| BC847BLT3G | ON-SEMICONDUCTOR/安森美 | 2.218 | 150,00 | TRANSISTOR / BC847 / SOT-23-3L / 300 MHZ / -65°C~+150°C / RoHS / 50V / TAPE ON REEL / 10000 PCS |
| BC847BLT3G | ON-SEMICONDUCTOR/安森美 | 2.216 | 890,00 | TRANSISTOR / BC847 / SOT-23-3L / 300 MHZ / -65°C~+150°C / RoHS / 50V / TAPE ON REEL / 10000 PCS |
| ESDR0502BT1G | ON-SEMICONDUCTOR/安森美 | 2.215 | 3,00 | ESD SUPPRESSOR / ESDR0502 / SC75-3 / 1 A / -55°C~+150°C / RoHS / 5.0 V / TAPE ON REEL / 3000 PCS |
| ESDR0502BT1G | ON-SEMICONDUCTOR/安森美 | 2.215 | 120,00 | ESD SUPPRESSOR / ESDR0502 / SC75-3 / 1 A / -55°C~+150°C / RoHS / 5.0 V / TAPE ON REEL / 3000 PCS |
| ESDR0502BT1G | ON-SEMICONDUCTOR/安森美 | 2.215 | 21,00 | ESD SUPPRESSOR / ESDR0502 / SC75-3 / 1 A / -55°C~+150°C / RoHS / 5.0 V / TAPE ON REEL / 3000 PCS |
| BC847BLT3G | ON-SEMICONDUCTOR/安森美 | 2.213 | 200,00 | TRANSISTOR / BC847 / SOT-23-3L / 300 MHZ / -65°C~+150°C / RoHS / 50V / TAPE ON REEL / 10000 PCS |
| BC847BLT3G | ON-SEMICONDUCTOR/安森美 | 2.213 | 20,00 | TRANSISTOR / BC847 / SOT-23-3L / 300 MHZ / -65°C~+150°C / RoHS / 50V / TAPE ON REEL / 10000 PCS |
| BC847BLT3G | ON-SEMICONDUCTOR/安森美 | 2.213 | 50,00 | TRANSISTOR / BC847 / SOT-23-3L / 300 MHZ / -65°C~+150°C / RoHS / 50V / TAPE ON REEL / 10000 PCS |
| NCP361MUTBG | ON-SEMICONDUCTOR/安森美 | 2.208 | 12,00 | VOLTAGE SUPPRESSOR / NCP361 / uDFN-6 / 20 uA / -40°C~+85°C / RoHS / 20V / TAPE ON REEL / 3000 PCS |
| NCP361MUTBG | ON-SEMICONDUCTOR/安森美 | 2.208 | 6,00 | VOLTAGE SUPPRESSOR / NCP361 / uDFN-6 / 20 uA / -40°C~+85°C / RoHS / 20V / TAPE ON REEL / 3000 PCS |
| NCP361MUTBG | ON-SEMICONDUCTOR/安森美 | 2.207 | 111,00 | VOLTAGE SUPPRESSOR / NCP361 / uDFN-6 / 20 uA / -40°C~+85°C / RoHS / 20V / TAPE ON REEL / 3000 PCS |
| NCP361MUTBG | ON-SEMICONDUCTOR/安森美 | 2.207 | 21,00 | VOLTAGE SUPPRESSOR / NCP361 / uDFN-6 / 20 uA / -40°C~+85°C / RoHS / 20V / TAPE ON REEL / 3000 PCS |
| NCP361MUTBG | ON-SEMICONDUCTOR/安森美 | 2.207 | 9,00 | VOLTAGE SUPPRESSOR / NCP361 / uDFN-6 / 20 uA / -40°C~+85°C / RoHS / 20V / TAPE ON REEL / 3000 PCS |
| NUP5120X6T2G | ON-SEMICONDUCTOR/安森美 | 2.204 | 40,00 | ARRAY / NUP5120 / SOT-553-5 / 90 W / -40°C~+125°C / RoHS / 400 V / TAPE ON REEL / 4000 PCS |
| UAA2016PG | ON-SEMICONDUCTOR/安森美 | 2.152 | 14,80 | PMIC/POWER MANAGEMENT / UAA2016 / PDIP-8 / 150 mA / -20℃~+85 ℃ / RoHS / -4.5 V / TUBE |
| NUP5120X6T2G | ON-SEMICONDUCTOR/安森美 | 2.147 | 80,00 | ARRAY / NUP5120 / SOT-553-5 / 90 W / -40°C~+125°C / RoHS / 400 V / TAPE ON REEL / 4000 PCS |
| LMV324AM14X | ON-SEMICONDUCTOR/安森美 | 2.147 | 45,00 | OP AMPS / LMV324 / SOIC-14 / 1.2 MHz / -40°C~+125°C / RoHS / 2.7 V / TAPE ON REEL / EOL / 2500 PCS |
| NUP5120X6T2G | ON-SEMICONDUCTOR/安森美 | 2.146 | 400,00 | ARRAY / NUP5120 / SOT-553-5 / 90 W / -40°C~+125°C / RoHS / 400 V / TAPE ON REEL / 4000 PCS |
| ESD9M5.0ST5G | ON-SEMICONDUCTOR/安森美 | 2.137 | 240,00 | ESD SUPPRESSOR / ESD9M5 / SOD-923-2 / 1 A / -55°C~+150°C / RoHS / 5.0 V / TAPE ON REEL / 8000 PCS |
| ESD9M5.0ST5G | ON-SEMICONDUCTOR/安森美 | 2.137 | 400,00 | ESD SUPPRESSOR / ESD9M5 / SOD-923-2 / 1 A / -55°C~+150°C / RoHS / 5.0 V / TAPE ON REEL / 8000 PCS |
| ESD9M5.0ST5G | ON-SEMICONDUCTOR/安森美 | 2.136 | 160,00 | ESD SUPPRESSOR / ESD9M5 / SOD-923-2 / 1 A / -55°C~+150°C / RoHS / 5.0 V / TAPE ON REEL / 8000 PCS |
| ESD9M5.0ST5G | ON-SEMICONDUCTOR/安森美 | 2.136 | 160,00 | ESD SUPPRESSOR / ESD9M5 / SOD-923-2 / 1 A / -55°C~+150°C / RoHS / 5.0 V / TAPE ON REEL / 8000 PCS |
| ESD9M5.0ST5G | ON-SEMICONDUCTOR/安森美 | 2.135 | 192,00 | ESD SUPPRESSOR / ESD9M5 / SOD-923-2 / 1 A / -55°C~+150°C / RoHS / 5.0 V / TAPE ON REEL / 8000 PCS |
| ESD9M5.0ST5G | ON-SEMICONDUCTOR/安森美 | 2.135 | 320,00 | ESD SUPPRESSOR / ESD9M5 / SOD-923-2 / 1 A / -55°C~+150°C / RoHS / 5.0 V / TAPE ON REEL / 8000 PCS |
| ESD9M5.0ST5G | ON-SEMICONDUCTOR/安森美 | 2.134 | 400,00 | ESD SUPPRESSOR / ESD9M5 / SOD-923-2 / 1 A / -55°C~+150°C / RoHS / 5.0 V / TAPE ON REEL / 8000 PCS |
| ESD9M5.0ST5G | ON-SEMICONDUCTOR/安森美 | 2.134 | 80,00 | ESD SUPPRESSOR / ESD9M5 / SOD-923-2 / 1 A / -55°C~+150°C / RoHS / 5.0 V / TAPE ON REEL / 8000 PCS |
| ESD9M5.0ST5G | ON-SEMICONDUCTOR/安森美 | 2.133 | 480,00 | ESD SUPPRESSOR / ESD9M5 / SOD-923-2 / 1 A / -55°C~+150°C / RoHS / 5.0 V / TAPE ON REEL / 8000 PCS |
| NUP2114UPXV5T1G | ON-SEMICONDUCTOR/安森美 | 2.129 | 200,00 | ESD SUPPRESSOR / NUP2114 / SOT-553-5 / 8 A / -40°C~+125°C / RoHS / 5.0 V / TAPE ON REEL / 4000 PCS |
| ESD9M5.0ST5G | ON-SEMICONDUCTOR/安森美 | 2.129 | 80,00 | ESD SUPPRESSOR / ESD9M5 / SOD-923-2 / 1 A / -55°C~+150°C / RoHS / 5.0 V / TAPE ON REEL / 8000 PCS |
| ESD9M5.0ST5G | ON-SEMICONDUCTOR/安森美 | 2.129 | 80,00 | ESD SUPPRESSOR / ESD9M5 / SOD-923-2 / 1 A / -55°C~+150°C / RoHS / 5.0 V / TAPE ON REEL / 8000 PCS |
| NUP2114UPXV5T1G | ON-SEMICONDUCTOR/安森美 | 2.128 | 8,00 | ESD SUPPRESSOR / NUP2114 / SOT-553-5 / 8 A / -40°C~+125°C / RoHS / 5.0 V / TAPE ON REEL / 4000 PCS |
| NUP2114UPXV5T1G | ON-SEMICONDUCTOR/安森美 | 2.128 | 40,00 | ESD SUPPRESSOR / NUP2114 / SOT-553-5 / 8 A / -40°C~+125°C / RoHS / 5.0 V / TAPE ON REEL / 4000 PCS |
| NUP2114UPXV5T1G | ON-SEMICONDUCTOR/安森美 | 2.128 | 12,00 | ESD SUPPRESSOR / NUP2114 / SOT-553-5 / 8 A / -40°C~+125°C / RoHS / 5.0 V / TAPE ON REEL / 4000 PCS |
| NUP2114UPXV5T1G | ON-SEMICONDUCTOR/安森美 | 2.125 | 28,00 | ESD SUPPRESSOR / NUP2114 / SOT-553-5 / 8 A / -40°C~+125°C / RoHS / 5.0 V / TAPE ON REEL / 4000 PCS |
| NUP2114UPXV5T1G | ON-SEMICONDUCTOR/安森美 | 2.125 | 120,00 | ESD SUPPRESSOR / NUP2114 / SOT-553-5 / 8 A / -40°C~+125°C / RoHS / 5.0 V / TAPE ON REEL / 4000 PCS |
| AR1335CSSC11SMKA0-CP | ON-SEMICONDUCTOR/安森美 | 2.121 | 3,00 | IMAGE SENSOR / AR1335 / 3D SYNCHRONIZATION CONTROLS / WFBGA-63 / RoHS / 1.8 V / TRAY / 3000 PCS |
| MC74HC32ADR2G | ON-SEMICONDUCTOR/安森美 | 2.028 | 5,00 | TTL / 74HC32 / SOIC−14 NB / SOIC-14 / 1 uA / -55°C~+125°C / RoHS / 2.0v~6.0v / TAPE ON REEL / 2500 PCS |
| MC74HC32ADR2G | ON-SEMICONDUCTOR/安森美 | 2.027 | 85,00 | TTL / 74HC32 / SOIC−14 NB / SOIC-14 / 1 uA / -55°C~+125°C / RoHS / 2.0v~6.0v / TAPE ON REEL / 2500 PCS |
| MC74HC32ADR2G | ON-SEMICONDUCTOR/安森美 | 2.027 | 55,00 | TTL / 74HC32 / SOIC−14 NB / SOIC-14 / 1 uA / -55°C~+125°C / RoHS / 2.0v~6.0v / TAPE ON REEL / 2500 PCS |
| MC74HC32ADR2G | ON-SEMICONDUCTOR/安森美 | 2.026 | 40,00 | TTL / 74HC32 / SOIC−14 NB / SOIC-14 / 1 uA / -55°C~+125°C / RoHS / 2.0v~6.0v / TAPE ON REEL / 2500 PCS |
| MC74HC32ADR2G | ON-SEMICONDUCTOR/安森美 | 2.026 | 5,00 | TTL / 74HC32 / SOIC−14 NB / SOIC-14 / 1 uA / -55°C~+125°C / RoHS / 2.0v~6.0v / TAPE ON REEL / 2500 PCS |
| MC74HC32ADR2G | ON-SEMICONDUCTOR/安森美 | 2.024 | 2,50 | TTL / 74HC32 / SOIC−14 NB / SOIC-14 / 1 uA / -55°C~+125°C / RoHS / 2.0v~6.0v / TAPE ON REEL / 2500 PCS |
| MC74HC32ADR2G | ON-SEMICONDUCTOR/安森美 | 2.022 | 40,00 | TTL / 74HC32 / SOIC−14 NB / SOIC-14 / 1 uA / -55°C~+125°C / RoHS / 2.0v~6.0v / TAPE ON REEL / 2500 PCS |
| MC74HC32ADR2G | ON-SEMICONDUCTOR/安森美 | 2.022 | 30,00 | TTL / 74HC32 / SOIC−14 NB / SOIC-14 / 1 uA / -55°C~+125°C / RoHS / 2.0v~6.0v / TAPE ON REEL / 2500 PCS |
| CAT24WC128J-TE13 | ON-SEMICONDUCTOR/安森美 | 224 | 2,55 | EEPROM-2WIRE / 24WC128 / SOIC / Leaded / 1.8V-5.5V / TAPE ON REEL / 2000 PCS |
| CAT24WC128J-TE13 | ON-SEMICONDUCTOR/安森美 | 222 | 6,00 | EEPROM-2WIRE / 24WC128 / SOIC / Leaded / 1.8V-5.5V / TAPE ON REEL / 2000 PCS |
| NDS9933A | ON-SEMICONDUCTOR/安森美 | 9.845 | 2,50 | MOSFET / NDS9933 / SOIC / Leaded / TAPE ON REEL / 2500 PCS |
| MTB10N40ET4 | ON-SEMICONDUCTOR/安森美 | 9.818 | 4,00 | OTHER / 10N40 / Leaded |
| EEEFT1H221AP | PANASONIC/松下 | 2.135 | 24,50 | CAPACITOR / 1H221 / SMD / 100 KHZ / -55°C~+105°C / RoHS / 50V / TAPE ON REEL / 500 PCS |
| SMD075-2 | RAYCHEM | 0 | 40,00 | SWITCH / SMD075 / Leaded / T&R / 2000 PCS |
| AT45DB321E-SHF-T | RENESAS/瑞萨 | 2.226 | 8,00 | DATA FLASH / 45DB321 / SOIC-8 / 85 MHZ / -40°C~+85°C / RoHS / 2.3v-3.6v / TAPE ON REEL / 2000 PCS 0.0 KG 37*35,5*6 CM |
| AT45DB321E-SHF-T | RENESAS/瑞萨 | 2.223 | 16,00 | DATA FLASH / 45DB321 / SOIC-8 / 85 MHZ / -40°C~+85°C / RoHS / 2.3v-3.6v / TAPE ON REEL / 2000 PCS 0.0 KG 37*35,5*6 CM |
| R7FA2E1A72DFL#AA0 | RENESAS/瑞萨 | 2.210 | 8,00 | MCU-ARM / 7FA2E1 / LQFP-48 / 48 MHZ / -40°C~+85°C / RoHS / 1.60V~5.5V / TRAY / 250 PCS |
| R7FA2E1A72DFL#AA0 | RENESAS/瑞萨 | 2.209 | 8,00 | MCU-ARM / 7FA2E1 / LQFP-48 / 48 MHZ / -40°C~+85°C / RoHS / 1.60V~5.5V / TRAY / 250 PCS |
| R7FA2E1A72DFL#AA0 | RENESAS/瑞萨 | 2.203 | 4,00 | MCU-ARM / 7FA2E1 / LQFP-48 / 48 MHZ / -40°C~+85°C / RoHS / 1.60V~5.5V / TRAY / 250 PCS |
| KLMAG1JETD-B041009 | SAMSUNG/三星 | 2.346 | 2,24 | FLASH-EMMC / 16GB EMMC / FBGA-153 / 52 MHZ / -20℃~+85 ℃ / RoHS / 1.8V~3.3V |
| K4B1G1646I-BCNBTCV | SAMSUNG/三星 | 2.346 | 22,00 | DDR3 SDRAM / 64MX16 DDR3 / FBGA-96 / 2133 Mbps / 0°C~+85°C / RoHS / 1.5 V / TAPE ON REEL / EOL / 2000 PCS |
| K4B2G0846F-BYMAT00 | SAMSUNG/三星 | 2.343 | 24,00 | DDR3L SDRAM / 256MX8 DDR3 / FBGA-78 / 1866 Mbps / 0°C~+85°C / RoHS / 1.35v / TAPE ON REEL / EOL / 2000 PCS |
| K4B1G1646I-BCNBTCV | SAMSUNG/三星 | 2.343 | 12,00 | DDR3 SDRAM / 64MX16 DDR3 / FBGA-96 / 2133 Mbps / 0°C~+85°C / RoHS / 1.5 V / TAPE ON REEL / EOL / 2000 PCS |
| K4B1G1646I-BCNBTCV | SAMSUNG/三星 | 2.340 | 8,00 | DDR3 SDRAM / 64MX16 DDR3 / FBGA-96 / 2133 Mbps / 0°C~+85°C / RoHS / 1.5 V / TAPE ON REEL / EOL / 2000 PCS |
| K4B2G1646F-BYMAT00 | SAMSUNG/三星 | 2.337 | 8,00 | DDR3L SDRAM / 128MX16 DDR3L / FBGA-96 / 1866 Mbps / 0°C~+85°C / RoHS / 1.35v / TAPE ON REEL / 2000 PCS |
| KLMAG1JETD-B041009 | SAMSUNG/三星 | 2.337 | 2,24 | FLASH-EMMC / 16GB EMMC / FBGA-153 / 52 MHZ / -20℃~+85 ℃ / RoHS / 1.8V~3.3V |
| K4B2G1646F-BYMAT00 | SAMSUNG/三星 | 2.334 | 60,00 | DDR3L SDRAM / 128MX16 DDR3L / FBGA-96 / 1866 Mbps / 0°C~+85°C / RoHS / 1.35v / TAPE ON REEL / 2000 PCS |
| K4B2G1646F-BCNBT00 | SAMSUNG/三星 | 2.334 | 22,00 | DDR3 SDRAM / 128MX16 DDR3 / FBGA-96 / 2133 Mbps / 0°C~+95°C / RoHS / 1.5 V / TAPE ON REEL / EOL / 2000 PCS 99.99 KG 38*36*7 CM |
| K4B2G1646F-BCNBT00 | SAMSUNG/三星 | 2.328 | 20,00 | DDR3 SDRAM / 128MX16 DDR3 / FBGA-96 / 2133 Mbps / 0°C~+95°C / RoHS / 1.5 V / TAPE ON REEL / EOL / 2000 PCS 99.99 KG 38*36*7 CM |
| K4T51083QN-BCE7000 | SAMSUNG/三星 | 2.237 | 5,12 | DDR2 SDRAM / 64MX8 DDR2 / FBGA-60 / 800 Mbps / 0°C~+95°C / RoHS / 1.8 V / TRAY / EOL / 1280 PCS 2.0 KG 38*19*11 CM |
| K4T51083QN-BCE7000 | SAMSUNG/三星 | 2.237 | 2,56 | DDR2 SDRAM / 64MX8 DDR2 / FBGA-60 / 800 Mbps / 0°C~+95°C / RoHS / 1.8 V / TRAY / EOL / 1280 PCS 2.0 KG 38*19*11 CM |
| K4T51083QN-BCE7000 | SAMSUNG/三星 | 2.204 | 3,84 | DDR2 SDRAM / 64MX8 DDR2 / FBGA-60 / 800 Mbps / 0°C~+95°C / RoHS / 1.8 V / TRAY / EOL / 1280 PCS 2.0 KG 38*19*11 CM |
| K4T1G084QJ-BIE7TCV | SAMSUNG/三星 | 2.201 | 6,00 | DDR2 SDRAM / 128MX8 DDR2 / FBGA-60 / 800 Mbps / -40°C~+85°C / RoHS / 1.8 V / TAPE ON REEL / EOL |
| K4T51083QN-BCE7000 | SAMSUNG/三星 | 2.201 | 2,60 | DDR2 SDRAM / 64MX8 DDR2 / FBGA-60 / 800 Mbps / 0°C~+95°C / RoHS / 1.8 V / TRAY / EOL / 1280 PCS 2.0 KG 38*19*11 CM |
| K4T51083QN-BCE7000 | SAMSUNG/三星 | 2.201 | 5,12 | DDR2 SDRAM / 64MX8 DDR2 / FBGA-60 / 800 Mbps / 0°C~+95°C / RoHS / 1.8 V / TRAY / EOL / 1280 PCS 2.0 KG 38*19*11 CM |
| K4T51083QN-BCE7000 | SAMSUNG/三星 | 2.152 | 10,24 | DDR2 SDRAM / 64MX8 DDR2 / FBGA-60 / 800 Mbps / 0°C~+95°C / RoHS / 1.8 V / TRAY / EOL / 1280 PCS 2.0 KG 38*19*11 CM |
| K4T51083QN-BCE7000 | SAMSUNG/三星 | 2.152 | 5,12 | DDR2 SDRAM / 64MX8 DDR2 / FBGA-60 / 800 Mbps / 0°C~+95°C / RoHS / 1.8 V / TRAY / EOL / 1280 PCS 2.0 KG 38*19*11 CM |
| K4B2G1646F-BCNB0CV | SAMSUNG/三星 | 2.140 | 30,24 | DDR3 SDRAM / 128MX16 DDR3 / FBGA-96 / 2133 Mbps / 0°C~+85°C / RoHS / 1.5 V / TRAY / EOL / 1120 PCS |
| K4B1G1646I-BMMATCV | SAMSUNG/三星 | 2.128 | 6,00 | DDR3L SDRAM / 64MX16 DDR3L / FBGA-96 / 1866 Mbps / -40°C~+95°C / RoHS / 1.5 V / TAPE ON REEL |
| K4B2G1646F-BCNB000 | SAMSUNG/三星 | 2.101 | 12,32 | DDR3 SDRAM / 128MX16 DDR3 / FBGA-96 / 2133 Mbps / 0°C~+85°C / RoHS / 1.5 V / TRAY / EOL / 1120 PCS |
| K4A4G165WE-BCTDT00 | SAMSUNG/三星 | 2.052 | 4,00 | DDR4 SDRAM / 256MX16 DDR4 / FBGA-96 / 2666 Mbps / 0°C~+85°C / RoHS / 1.2 V / TAPE ON REEL / 2000 PCS |
| K4A4G165WE-BCTD000 | SAMSUNG/三星 | 2.049 | 17,92 | DDR4 SDRAM / 256MX16 DDR4 / FBGA-96 / 2666 Mbps / 0°C~+85°C / RoHS / 1.2 V / TRAY / 1120 PCS |
| K4A4G165WE-BCTD000 | SAMSUNG/三星 | 2.046 | 8,96 | DDR4 SDRAM / 256MX16 DDR4 / FBGA-96 / 2666 Mbps / 0°C~+85°C / RoHS / 1.2 V / TRAY / 1120 PCS |
| K4B2G1646F-BCNB000 | SAMSUNG/三星 | 2.043 | 6,72 | DDR3 SDRAM / 128MX16 DDR3 / FBGA-96 / 2133 Mbps / 0°C~+85°C / RoHS / 1.5 V / TRAY / EOL / 1120 PCS |
| K4B2G1646F-BCNB000 | SAMSUNG/三星 | 2.040 | 4,48 | DDR3 SDRAM / 128MX16 DDR3 / FBGA-96 / 2133 Mbps / 0°C~+85°C / RoHS / 1.5 V / TRAY / EOL / 1120 PCS |
| KLMBG4GESD-C02PT18 | SAMSUNG/三星 | 1.949 | 3,00 | FLASH-EMMC / 32GB EMMC / FBGA-100 / 52MHZ / -40°C~+85°C / RoHS / 1.8V/3.3V / TAPE ON REEL / EOL / 1000 PCS |
| K4F6E304HB-MGCJ000 | SAMSUNG/三星 | 1.922 | 6,08 | LPDDR4 MOBILE / 1GX16 LPDDR4 / FBGA-200 / 1866 MHz / -25°C~+85°C / RoHS / 1.1 V / TRAY / EOL / 1280 PCS 2.0 KG 38*19*11 CM |
| KLMBG4GESD-C02PT18 | SAMSUNG/三星 | 1.910 | 7,00 | FLASH-EMMC / 32GB EMMC / FBGA-100 / 52MHZ / -40°C~+85°C / RoHS / 1.8V/3.3V / TAPE ON REEL / EOL / 1000 PCS |
| K4B8G0846D-MYK0000 | SAMSUNG/三星 | 1.831 | 8,09 | DDR3L SDRAM / 1GX8 DDR3L / FBGA-78 / 1600 Mbps / 0°C~+85°C / RoHS / 1.35V/1.5V / TRAY / EOL / 1280 PCS |
| K4B8G0846D-MYK0000 | SAMSUNG/三星 | 1.813 | 3,84 | DDR3L SDRAM / 1GX8 DDR3L / FBGA-78 / 1600 Mbps / 0°C~+85°C / RoHS / 1.35V/1.5V / TRAY / EOL / 1280 PCS |
| K4B1G1646I-BCMAT00 | SAMSUNG/三星 | 1.810 | 66,00 | DDR3 SDRAM / 64MX16 DDR3 / FBGA-96 / 1866 Mbps / 0°C~+95°C / RoHS / 1.5 V / TAPE ON REEL / 2000 PCS 1.0 KG 36*34*7 CM |
| K4B8G0846D-MYK0000 | SAMSUNG/三星 | 1.801 | 3,84 | DDR3L SDRAM / 1GX8 DDR3L / FBGA-78 / 1600 Mbps / 0°C~+85°C / RoHS / 1.35V/1.5V / TRAY / EOL / 1280 PCS |
| K4B8G0846D-MYK0000 | SAMSUNG/三星 | 1.801 | 3,84 | DDR3L SDRAM / 1GX8 DDR3L / FBGA-78 / 1600 Mbps / 0°C~+85°C / RoHS / 1.35V/1.5V / TRAY / EOL / 1280 PCS |
| K4T51163QQ-BCE7000 | SAMSUNG/三星 | 1.634 | 320,74 | DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 800 Mbps / 0°C~+85°C / RoHS / 1.8 V / TRAY / EOL / 1280 PCS 2.0 KG 38*19*11 CM |
| K4X1G323PF-8GD8000 | SAMSUNG/三星 | 1.522 | 3,36 | LPDDR1 MOBILE / 32MX32 LPDDR1 / FBGA-90 / 200 MHZ / -25 C~+85 C / RoHS / 1.8 V / TRAY / 1120 PCS |
| K9K8G08U0E-SCB0T00 | SAMSUNG/三星 | 1.507 | 20,00 | FLASH-NAND / 1GX8 NAND SLC / TSOP-48 / 25 ns / 0°C~+85°C / RoHS / 3.3 V / TAPE ON REEL / EOL / 1000 PCS |
| K4T51083QQ-BCE7000 | SAMSUNG/三星 | 1.434 | 5,67 | DDR2 SDRAM / 64MX8 DDR2 / FBGA-60 / 800 Mbps / 0°C~+85°C / RoHS / 1.8 V / TRAY / 1280 PCS 2.0 KG 38*19*11 CM |
| K4T51083QQ-BCE7000 | SAMSUNG/三星 | 1.431 | 8,37 | DDR2 SDRAM / 64MX8 DDR2 / FBGA-60 / 800 Mbps / 0°C~+85°C / RoHS / 1.8 V / TRAY / 1280 PCS 2.0 KG 38*19*11 CM |
| K521H12ACE-B050T00 | SAMSUNG/三星 | 1.252 | 4,00 | MCP / 1GB NAND+512M LPDDR1 / NAND + DDR1 / FBGA-107 / 5 NS / 0°C~+85°C / RoHS / 1.70-1.95V / TAPE ON REEL / 2000 PCS 1.11 KG 36*35*7 CM |
| K4M51323PI-HG75000 | SAMSUNG/三星 | 1.252 | 42,55 | SDRAM-LV MOBILE / 16MX32 SD / MOBIL SDRAM LOW VOLTAGE / FBGA-90 / 133 MHZ / -25°C~+85°C / RoHS / 1.8 V / TRAY / EOL / 1120 PCS 2.4 KG 38*19*11 CM |
| K4M51323PI-HG75000 | SAMSUNG/三星 | 1.246 | 90,62 | SDRAM-LV MOBILE / 16MX32 SD / MOBIL SDRAM LOW VOLTAGE / FBGA-90 / 133 MHZ / -25°C~+85°C / RoHS / 1.8 V / TRAY / EOL / 1120 PCS 2.4 KG 38*19*11 CM |
| K4H561638N-LCB3T00 | SAMSUNG/三星 | 1.237 | 10,00 | DDR1 SDRAM / 16MX16 DDR1 / TSOP2(66) / 166 MHZ / 0°C~+85°C / RoHS / 2.5 V / TAPE ON REEL / EOL / 2000 PCS |
| K4H561638N-LCB3000 | SAMSUNG/三星 | 1.237 | 9,60 | DDR1 SDRAM / 16MX16 DDR1 / 333 MHZ / TSOP2(66) / 166 MHZ / 0°C~+85°C / RoHS / 2.5 V / TRAY / 960 PCS |
| K4H561638N-LCB3000 | SAMSUNG/三星 | 1.228 | 3,84 | DDR1 SDRAM / 16MX16 DDR1 / 333 MHZ / TSOP2(66) / 166 MHZ / 0°C~+85°C / RoHS / 2.5 V / TRAY / 960 PCS |
| K4H561638N-LCB3000 | SAMSUNG/三星 | 1.225 | 8,64 | DDR1 SDRAM / 16MX16 DDR1 / 333 MHZ / TSOP2(66) / 166 MHZ / 0°C~+85°C / RoHS / 2.5 V / TRAY / 960 PCS |
| K4X28163PN-TGC3T00 | SAMSUNG/三星 | 1.149 | 20,00 | LPDDR1 MOBILE / 8MX16 LPDDR1 / FBGA-60 / 133 MHZ / -25°C~+70°C / RoHS / 1.8 V / TAPE ON REEL / EOL / 2000 PCS 1.0 KG 36*35*7 CM |
| K4X28163PN-TGC3T00 | SAMSUNG/三星 | 1.149 | 130,00 | LPDDR1 MOBILE / 8MX16 LPDDR1 / FBGA-60 / 133 MHZ / -25°C~+70°C / RoHS / 1.8 V / TAPE ON REEL / EOL / 2000 PCS 1.0 KG 36*35*7 CM |
| K4S281632O-LI75000 | SAMSUNG/三星 | 1.149 | 12,08 | SDRAM / 8MX16 SD / PC133 / TSOP2(54) / 133 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY / EOL / 960 PCS 2.6 KG 19*38*12 CM |
| K4S281632O-LI75T00 | SAMSUNG/三星 | 1.149 | 82,00 | SDRAM / 8MX16 SD / PC133 / TSOP2(54) / 133 MHZ / -40°C~+85°C / RoHS / 3.3 V / TAPE ON REEL / EOL / 2000 PCS 2.6 KG 36*35*7 CM |
| K4S560432N-LC75TCV | SAMSUNG/三星 | 1.149 | 14,00 | SDRAM / 64MX4 SD / TSOP2(54) / 133 MHZ / 0°C~+85°C / RoHS / 3.3 V / TAPE ON REEL / EOL |
| K4S560832J-LC750JP | SAMSUNG/三星 | 1.149 | 4,80 | SDRAM / 32MX8 SD / TSOP2(54) / 133 MHZ / 0°C~+85°C / RoHS / 3.3V/5V / TRAY / 960 PCS |
| K9F5608R0D-JIB0000 | SAMSUNG/三星 | 1.146 | 12,44 | FLASH-NAND / 32MX8 NAND SLC / SLC NORMAL / FBGA-63 / 50 NS / -40°C~+85°C / RoHS / 1.65V-1.95 / TRAY / EOL / 1280 PCS 2.1 KG 38*19*11 CM |
| K4S280832O-LC75000 | SAMSUNG/三星 | 1.146 | 10,60 | SDRAM / 16MX8 SD / PC133 / TSOP2(54) / 133 MHZ / 0°C~+85°C / RoHS / 3.3 V / TRAY / EOL |
| K4S560432N-LC75TCV | SAMSUNG/三星 | 1.146 | 8,00 | SDRAM / 64MX4 SD / TSOP2(54) / 133 MHZ / 0°C~+85°C / RoHS / 3.3 V / TAPE ON REEL / EOL |
| K4S560832J-LC75000 | SAMSUNG/三星 | 1.146 | 25,81 | SDRAM / 32MX8 SD / TSOP2(54) / 133 MHZ / 0°C~+85°C / RoHS / 3.3 V / TRAY / 960 PCS |
| K4X28163PN-TGC3T00 | SAMSUNG/三星 | 1.143 | 6,00 | LPDDR1 MOBILE / 8MX16 LPDDR1 / FBGA-60 / 133 MHZ / -25°C~+70°C / RoHS / 1.8 V / TAPE ON REEL / EOL / 2000 PCS 1.0 KG 36*35*7 CM |
| K9F5608U0D-JIB0000 | SAMSUNG/三星 | 1.143 | 19,20 | FLASH-NAND / 32MX8 NAND SLC / SLC NORMAL / FBGA-63 / 50 NS / -40°C~+85°C / RoHS / 2.7v-3.6v / TRAY / EOL / 1280 PCS 2.0 KG 38*19*11 CM |
| K9F5608R0D-JIB0000 | SAMSUNG/三星 | 1.143 | 12,56 | FLASH-NAND / 32MX8 NAND SLC / SLC NORMAL / FBGA-63 / 50 NS / -40°C~+85°C / RoHS / 1.65V-1.95 / TRAY / EOL / 1280 PCS 2.1 KG 38*19*11 CM |
| K9F5608U0D-JIB0000 | SAMSUNG/三星 | 1.140 | 7,68 | FLASH-NAND / 32MX8 NAND SLC / SLC NORMAL / FBGA-63 / 50 NS / -40°C~+85°C / RoHS / 2.7v-3.6v / TRAY / EOL / 1280 PCS 2.0 KG 38*19*11 CM |
| K9F5608R0D-JIB0000 | SAMSUNG/三星 | 1.140 | 5,06 | FLASH-NAND / 32MX8 NAND SLC / SLC NORMAL / FBGA-63 / 50 NS / -40°C~+85°C / RoHS / 1.65V-1.95 / TRAY / EOL / 1280 PCS 2.1 KG 38*19*11 CM |
| K9F1208U0C-JIB0T00 | SAMSUNG/三星 | 1.137 | 20,00 | FLASH-NAND / 64MX8 NAND SLC / SLC NORMAL / FBGA-63 / 42 NS / -40°C~+85°C / RoHS / 2.7v-3.6v / TAPE ON REEL / EOL / 2000 PCS 1.2 KG 36*35*7 CM |
| K9F5608U0D-JIB0000 | SAMSUNG/三星 | 1.137 | 14,08 | FLASH-NAND / 32MX8 NAND SLC / SLC NORMAL / FBGA-63 / 50 NS / -40°C~+85°C / RoHS / 2.7v-3.6v / TRAY / EOL / 1280 PCS 2.0 KG 38*19*11 CM |
| K4S560432N-LC75000 | SAMSUNG/三星 | 1.134 | 4,80 | SDRAM / 64MX4 SD / TSOP2(54) / 133 MHZ / 0°C~+85°C / RoHS / 3.3 V / TRAY / 960 PCS |
| K9F2G08U0C-BIB0000 | SAMSUNG/三星 | 1.128 | 3,58 | FLASH-NAND / 256MX8 NAND SLC / SLC NORMAL / FBGA-63 / 25 ns / 0°C~+70°C / RoHS / 2.7v-3.6v / TRAY / 1280 PCS 2.5 KG 38*19*11 CM |
| K9F1208U0C-JIB0T00 | SAMSUNG/三星 | 1.119 | 4,00 | FLASH-NAND / 64MX8 NAND SLC / SLC NORMAL / FBGA-63 / 42 NS / -40°C~+85°C / RoHS / 2.7v-3.6v / TAPE ON REEL / EOL / 2000 PCS 1.2 KG 36*35*7 CM |
| K9F5608R0D-JIB0T00 | SAMSUNG/三星 | 1.040 | 32,00 | FLASH-NAND / 32MX8 NAND SLC / SLC NORMAL / FBGA-63 / 50 NS / -40°C~+85°C / RoHS / 1.65V-1.95 / TAPE ON REEL / EOL / 2000 PCS 1.0 KG 37*35*7 CM |
| K9F5608R0D-JIB0000 | SAMSUNG/三星 | 1.040 | 2,27 | FLASH-NAND / 32MX8 NAND SLC / SLC NORMAL / FBGA-63 / 50 NS / -40°C~+85°C / RoHS / 1.65V-1.95 / TRAY / EOL / 1280 PCS 2.1 KG 38*19*11 CM |
| K4S560832J-UC75T00 | SAMSUNG/三星 | 1.040 | 4,00 | SDRAM / 32MX8 SD / PC133 / TSOP2(54) / 133 MHZ / 0°C~+85°C / RoHS / 3.3 V / TAPE ON REEL / EOL / 2000 PCS 2.4 KG 36*35*7 CM |
| K9F5608R0D-JIB0000 | SAMSUNG/三星 | 1.037 | 21,76 | FLASH-NAND / 32MX8 NAND SLC / SLC NORMAL / FBGA-63 / 50 NS / -40°C~+85°C / RoHS / 1.65V-1.95 / TRAY / EOL / 1280 PCS 2.1 KG 38*19*11 CM |
| K9F5608R0D-JIB0000 | SAMSUNG/三星 | 1.037 | 7,68 | FLASH-NAND / 32MX8 NAND SLC / SLC NORMAL / FBGA-63 / 50 NS / -40°C~+85°C / RoHS / 1.65V-1.95 / TRAY / EOL / 1280 PCS 2.1 KG 38*19*11 CM |
| K9F5608R0D-JIB0000 | SAMSUNG/三星 | 1.037 | 8,56 | FLASH-NAND / 32MX8 NAND SLC / SLC NORMAL / FBGA-63 / 50 NS / -40°C~+85°C / RoHS / 1.65V-1.95 / TRAY / EOL / 1280 PCS 2.1 KG 38*19*11 CM |
| K9F5608R0D-JIB0000 | SAMSUNG/三星 | 1.034 | 4,80 | FLASH-NAND / 32MX8 NAND SLC / SLC NORMAL / FBGA-63 / 50 NS / -40°C~+85°C / RoHS / 1.65V-1.95 / TRAY / EOL / 1280 PCS 2.1 KG 38*19*11 CM |
| K5N3217ATA-AT8T0TN | SAMSUNG/三星 | 1.028 | 21,00 | MCP / 32MF+16MUR / MCP : 32MB MUX NOR FLASH + 16MB MUX UTRAM2 / FBGA-52 / 83 MHZ / -25°C~+85°C / RoHS / 1.8 V / TAPE ON REEL / 3000 PCS |
| K9F4G08U0B-PIB0(ON BOARD) | SAMSUNG/三星 | 10 | 4,00 | FLASH-NAND / 512MX8 NAND SLC / TSOP-48 / 25 ns / -40°C~+85°C / RoHS / 2.7v-3.6v / OTHER / 960 PCS |
| K4X1G163PQ-FGC3000 | SAMSUNG/三星 | 928 | 3,16 | LPDDR1 MOBILE / 64MX16 LPDDR1 / G: Extended, Low, i-TCSR & PASR & DS / FBGA-60 / 133 MHZ / -25°C~+85°C / RoHS / 1.8 V / TRAY / EOL / 1120 PCS 2.3 KG 19*38*12 CM |
| K4M641633K-BN75000 | SAMSUNG/三星 | 925 | 6,42 | SDRAM MOBILE / 4MX16 SD / FBGA-54 / 133 MHZ / -25°C~+85°C / RoHS / 3.0v/3.3v / TRAY / EOL / 1280 PCS 2.4 KG 38*19*11 CM |
| K4M641633K-BN75000 | SAMSUNG/三星 | 922 | 9,20 | SDRAM MOBILE / 4MX16 SD / FBGA-54 / 133 MHZ / -25°C~+85°C / RoHS / 3.0v/3.3v / TRAY / EOL / 1280 PCS 2.4 KG 38*19*11 CM |
| K4M641633K-BN75000 | SAMSUNG/三星 | 913 | 15,36 | SDRAM MOBILE / 4MX16 SD / FBGA-54 / 133 MHZ / -25°C~+85°C / RoHS / 3.0v/3.3v / TRAY / EOL / 1280 PCS 2.4 KG 38*19*11 CM |
| K6R1008V1D-UI10T00 | SAMSUNG/三星 | 649 | 2,63 | SRAM / 128KX8 FAST / TSOP2(32) / 10 NS / -40°C~+85°C / RoHS / 3.3 V / TAPE ON REEL / 1000 PCS 5.3 KG 44*44*24 CM |
| K4S641633H-BN75000 | SAMSUNG/三星 | 646 | 3,11 | SDRAM MOBILE / 4MX16 SD / FBGA-54 / 133 MHZ / -25°C~+85°C / RoHS / 3.0v/3.3v / TRAY / 1280 PCS 2.4 KG 38*19*11 CM |
| K6R1008V1D-UI10000 | SAMSUNG/三星 | 637 | 10,21 | SRAM / 128KX8 FAST / TSOP2(32) / 10 NS / -40°C~+85°C / RoHS / 3.3 V / TRAY / 960 PCS 2.0 KG 19*38*12 CM |
| K6X1008T2D-TF70000 | SAMSUNG/三星 | 549 | 20,16 | SRAM / 128KX8 SRAM / LOW LOW POWER / TSOP-32 / 70 NS / -40°C~+85°C / Leaded / 2.7V~3.6V / TRAY / 1440 PCS |
| K6X1008T2D-TF70000 | SAMSUNG/三星 | 546 | 5,76 | SRAM / 128KX8 SRAM / LOW LOW POWER / TSOP-32 / 70 NS / -40°C~+85°C / Leaded / 2.7V~3.6V / TRAY / 1440 PCS |
| K6F4016U6G-EF55T | SAMSUNG/三星 | 534 | 4,30 | SRAM / 256KX16 SRAM / LOW LOW POWER / TBGA-48 / 55 NS / -40°C~+85°C / Leaded / 2.7V~3.3V / TAPE ON REEL / 2000 PCS |
| K7N801845B-QC13 | SAMSUNG/三星 | 440 | 2,88 | SRAM-SYNC / 512KX18 PBNT / PIPELINE BURST+NTRAM / TQFP-100 / 13 MHz / 0°C~+70°C / Leaded / 2.5 V / TRAY / 720 PCS 2.9 KG 39*19*11* CM |
| K6F2008U2E-EF70T00 | SAMSUNG/三星 | 422 | 6,00 | SRAM / 256KX8 SRAM / LOW LOW POWER / TBGA-48 / 70 NS / -40°C~+85°C / Leaded / 3.0V / TAPE ON REEL / 4000 PCS 1.66 KG 36*34*7 CM |
| K6F2008U2E-EF70T00 | SAMSUNG/三星 | 419 | 4,00 | SRAM / 256KX8 SRAM / LOW LOW POWER / TBGA-48 / 70 NS / -40°C~+85°C / Leaded / 3.0V / TAPE ON REEL / 4000 PCS 1.66 KG 36*34*7 CM |
| K9F4008W0A-TCB0000 | SAMSUNG/三星 | 413 | 16,32 | FLASH-NAND / 512KX8 NAND SLC / 400mil / 0.8 mm pitch / TSOP2(40/44) / 120 NS / 0°C~+70°C / Leaded / 3.0V-5.5V / TRAY / 480 PCS |
| K9F4008W0A-TCB0000 | SAMSUNG/三星 | 407 | 9,60 | FLASH-NAND / 512KX8 NAND SLC / 400mil / 0.8 mm pitch / TSOP2(40/44) / 120 NS / 0°C~+70°C / Leaded / 3.0V-5.5V / TRAY / 480 PCS |
| K7N801801B-HC13 | SAMSUNG/三星 | 404 | 5,94 | SRAM-SYNC / 512KX18 PBNT / PIPELINE BURST+NTRAM / FBGA-165 / 13 MHz / -25°C~+85°C / Leaded / 3.3 V / TRAY / 330 PCS 1.7 KG 37*17*7 CM |
| K4F151612D-TC60T00 | SAMSUNG/三星 | 404 | 3,00 | DRAM / 1MX16 FP / 1k Refresh / TSOP2(44/50) / 60 NS / 0°C~+85°C / Leaded / 3.3 V / TAPE ON REEL / EOL / 1000 PCS 1.46 KG 36*34*7 CM |
| K4F151612D-TC60T00 | SAMSUNG/三星 | 401 | 18,00 | DRAM / 1MX16 FP / 1k Refresh / TSOP2(44/50) / 60 NS / 0°C~+85°C / Leaded / 3.3 V / TAPE ON REEL / EOL / 1000 PCS 1.46 KG 36*34*7 CM |
| K9F4008W0A-TCB0000 | SAMSUNG/三星 | 401 | 21,12 | FLASH-NAND / 512KX8 NAND SLC / 400mil / 0.8 mm pitch / TSOP2(40/44) / 120 NS / 0°C~+70°C / Leaded / 3.0V-5.5V / TRAY / 480 PCS |
| K4F151612D-TC60T00 | SAMSUNG/三星 | 352 | 24,00 | DRAM / 1MX16 FP / 1k Refresh / TSOP2(44/50) / 60 NS / 0°C~+85°C / Leaded / 3.3 V / TAPE ON REEL / EOL / 1000 PCS 1.46 KG 36*34*7 CM |
| K9F4008W0A-TCB0000 | SAMSUNG/三星 | 352 | 3,84 | FLASH-NAND / 512KX8 NAND SLC / 400mil / 0.8 mm pitch / TSOP2(40/44) / 120 NS / 0°C~+70°C / Leaded / 3.0V-5.5V / TRAY / 480 PCS |
| K4F151612D-TC60T00 | SAMSUNG/三星 | 349 | 30,00 | DRAM / 1MX16 FP / 1k Refresh / TSOP2(44/50) / 60 NS / 0°C~+85°C / Leaded / 3.3 V / TAPE ON REEL / EOL / 1000 PCS 1.46 KG 36*34*7 CM |
| K9F4008W0A-TCB0000 | SAMSUNG/三星 | 349 | 8,16 | FLASH-NAND / 512KX8 NAND SLC / 400mil / 0.8 mm pitch / TSOP2(40/44) / 120 NS / 0°C~+70°C / Leaded / 3.0V-5.5V / TRAY / 480 PCS |
| K4F151612D-TC60T00 | SAMSUNG/三星 | 346 | 49,00 | DRAM / 1MX16 FP / 1k Refresh / TSOP2(44/50) / 60 NS / 0°C~+85°C / Leaded / 3.3 V / TAPE ON REEL / EOL / 1000 PCS 1.46 KG 36*34*7 CM |
| K4F151612D-TC60T00 | SAMSUNG/三星 | 343 | 35,00 | DRAM / 1MX16 FP / 1k Refresh / TSOP2(44/50) / 60 NS / 0°C~+85°C / Leaded / 3.3 V / TAPE ON REEL / EOL / 1000 PCS 1.46 KG 36*34*7 CM |
| K7A801809B-QC25 | SAMSUNG/三星 | 316 | 4,87 | SRAM-SYNC / 512KX18 SPB / SYNC PIPELINE BURST / TQFP-100 / 250 MHZ / 0°C~+85°C / Leaded / 3.3 V / TRAY / 360 PCS 1.7 KG 37*17*7 CM |
| K7N403609B-QC25 | SAMSUNG/三星 | 241 | 3,13 | SRAM-SYNC / 128KX36 PBNT / PIPELINE BURST+NTRAM / TQFP-100 / 250 MHZ / -25°C~+85°C / Leaded / 3.3 V / TRAY / 360 PCS 1.7 KG 37*17*7 CM |
| K7A401800B-QI16T00 | SAMSUNG/三星 | 202 | 2,40 | SRAM-SYNC / 256KX18 SPB / SYNC PIPELINE BURST / TQFP-100 / 167 MHZ / -40°C~+85°C / Leaded / 3.3 V / TAPE ON REEL / 800 PCS 2.0 KG 36*35*7 CM |
| K4E151612D-JC60 | SAMSUNG/三星 | 40 | 7,00 | DRAM / 1MX16 EDO / (3.3V, 1K Ref.) / SOJ-42 / 60 NS / 0°C~+85°C / Leaded / 3.3 V / TAPE ON REEL / EOL / 1000 PCS 2.0 KG |
| K4E661612D-TP50 | SAMSUNG/三星 | 37 | 4,00 | DRAM / 4MX16 EDO / 1BANK;8K REF/64MS / TSOP2(50) / 50 NS / -40°C~+85°C / Leaded / 3.3 V / TAPE ON REEL / 1000 PCS |
| K7B403625M-QC75 | SAMSUNG/三星 | 34 | 3,48 | SRAM-SYNC / 128KX36 SB / SYNC BURST / TQFP-100 / 250 MHZ / 0°C~+70°C / Leaded / 3.3 V / TRAY / 360 PCS 1.6 KG 37*17*6 CM |
| K4E661612D-TP50 | SAMSUNG/三星 | 25 | 21,89 | DRAM / 4MX16 EDO / 1BANK;8K REF/64MS / TSOP2(50) / 50 NS / -40°C~+85°C / Leaded / 3.3 V / TAPE ON REEL / 1000 PCS |
| K4E661612D-TP50 | SAMSUNG/三星 | 22 | 3,59 | DRAM / 4MX16 EDO / 1BANK;8K REF/64MS / TSOP2(50) / 50 NS / -40°C~+85°C / Leaded / 3.3 V / TAPE ON REEL / 1000 PCS |
| K6T1008U2E-YF10T00 | SAMSUNG/三星 | 16 | 4,00 | SRAM / 128KX8 SRAM / TSOP-32 / 100 NS / -40°C~+85°C / Leaded / 2.7V~3.3V / TAPE ON REEL / 4000 PCS 2.62 KG 36*35*7 CM |
| SSL1C471M1012BB | SAMSUNG/三星 | 97 | 19,20 | CAPACITOR / 1C471 / Leaded |
| SSL1C471M1012BB | SAMSUNG/三星 | 97 | 8,16 | CAPACITOR / 1C471 / Leaded |
| R86-0040 | SEI | 98 | 5,00 | RESISTOR / R86 / CARBON FILM RESISTORS / CF, 1/4W, 5%, 10K OHMS, / Leaded |
| STMP3411L-TA3 | SIGMATEL | 419 | 3,68 | DECODER / STMP3411 / TQFP-100 / Leaded / TRAY / 450 PCS 1.58 KG 37*16*8 CM |
| H5PS5182KFR-Y5C | SK HYNIX/海力士 | 1.713 | 4,22 | DDR2 SDRAM / 64MX8 DDR2 / Y5 - 3 NS / FBGA-60 / 333 MHZ / 0°C~+95°C / RoHS / 1.8 V / TRAY / 1600 PCS 2.0 KG 9*11*37 CM |
| H5PS5182KFR-Y5C | SK HYNIX/海力士 | 1.712 | 15,75 | DDR2 SDRAM / 64MX8 DDR2 / Y5 - 3 NS / FBGA-60 / 333 MHZ / 0°C~+95°C / RoHS / 1.8 V / TRAY / 1600 PCS 2.0 KG 9*11*37 CM |
| H5PS5182KFR-Y5C | SK HYNIX/海力士 | 1.711 | 11,00 | DDR2 SDRAM / 64MX8 DDR2 / Y5 - 3 NS / FBGA-60 / 333 MHZ / 0°C~+95°C / RoHS / 1.8 V / TRAY / 1600 PCS 2.0 KG 9*11*37 CM |
| H5PS5182KFR-Y5C | SK HYNIX/海力士 | 1.710 | 10,14 | DDR2 SDRAM / 64MX8 DDR2 / Y5 - 3 NS / FBGA-60 / 333 MHZ / 0°C~+95°C / RoHS / 1.8 V / TRAY / 1600 PCS 2.0 KG 9*11*37 CM |
| H5PS5182KFR-Y5C | SK HYNIX/海力士 | 1.709 | 6,67 | DDR2 SDRAM / 64MX8 DDR2 / Y5 - 3 NS / FBGA-60 / 333 MHZ / 0°C~+95°C / RoHS / 1.8 V / TRAY / 1600 PCS 2.0 KG 9*11*37 CM |
| H5PS5182KFR-Y5C | SK HYNIX/海力士 | 1.708 | 10,59 | DDR2 SDRAM / 64MX8 DDR2 / Y5 - 3 NS / FBGA-60 / 333 MHZ / 0°C~+95°C / RoHS / 1.8 V / TRAY / 1600 PCS 2.0 KG 9*11*37 CM |
| H5PS5182KFR-Y5C | SK HYNIX/海力士 | 1.707 | 15,33 | DDR2 SDRAM / 64MX8 DDR2 / Y5 - 3 NS / FBGA-60 / 333 MHZ / 0°C~+95°C / RoHS / 1.8 V / TRAY / 1600 PCS 2.0 KG 9*11*37 CM |
| H5PS5182KFR-Y5C | SK HYNIX/海力士 | 1.706 | 37,55 | DDR2 SDRAM / 64MX8 DDR2 / Y5 - 3 NS / FBGA-60 / 333 MHZ / 0°C~+95°C / RoHS / 1.8 V / TRAY / 1600 PCS 2.0 KG 9*11*37 CM |
| H5PS5182KFR-Y5C | SK HYNIX/海力士 | 1.705 | 10,21 | DDR2 SDRAM / 64MX8 DDR2 / Y5 - 3 NS / FBGA-60 / 333 MHZ / 0°C~+95°C / RoHS / 1.8 V / TRAY / 1600 PCS 2.0 KG 9*11*37 CM |
| H5PS5182KFR-Y5C | SK HYNIX/海力士 | 1.704 | 9,61 | DDR2 SDRAM / 64MX8 DDR2 / Y5 - 3 NS / FBGA-60 / 333 MHZ / 0°C~+95°C / RoHS / 1.8 V / TRAY / 1600 PCS 2.0 KG 9*11*37 CM |
| H5PS5182KFR-Y5C | SK HYNIX/海力士 | 1.703 | 25,71 | DDR2 SDRAM / 64MX8 DDR2 / Y5 - 3 NS / FBGA-60 / 333 MHZ / 0°C~+95°C / RoHS / 1.8 V / TRAY / 1600 PCS 2.0 KG 9*11*37 CM |
| H5PS5182KFR-Y5C | SK HYNIX/海力士 | 1.631 | 7,96 | DDR2 SDRAM / 64MX8 DDR2 / Y5 - 3 NS / FBGA-60 / 333 MHZ / 0°C~+95°C / RoHS / 1.8 V / TRAY / 1600 PCS 2.0 KG 9*11*37 CM |
| H5PS5182KFR-Y5C | SK HYNIX/海力士 | 1.629 | 7,57 | DDR2 SDRAM / 64MX8 DDR2 / Y5 - 3 NS / FBGA-60 / 333 MHZ / 0°C~+95°C / RoHS / 1.8 V / TRAY / 1600 PCS 2.0 KG 9*11*37 CM |
| H5PS5182KFR-Y5C | SK HYNIX/海力士 | 1.626 | 21,61 | DDR2 SDRAM / 64MX8 DDR2 / Y5 - 3 NS / FBGA-60 / 333 MHZ / 0°C~+95°C / RoHS / 1.8 V / TRAY / 1600 PCS 2.0 KG 9*11*37 CM |
| HY57V643220DLTP-7I | SK HYNIX/海力士 | 606 | 5,48 | SDRAM / 2MX32 SD / LOW POWER / TSOP2(86) / 143 MHZ / -40°C~+85°C / RoHS / 3.3 V / TRAY / 960 PCS 2.4 KG 37*18*11 CM |
| HY62V8100BLLG-70DR | SK HYNIX/海力士 | 419 | 3,00 | SRAM / 128KX8 SRAM / SOP-32 / 70 NS / Leaded / 3.3 V / TAPE ON REEL / 1000 PCS 2.22 KG 35*35*6 CM |
| HY628100BLLT1-55DR | SK HYNIX/海力士 | 419 | 3,00 | SRAM / 128KX8 SRAM / TSOP-32 / 55 NS / 0°C~+70°C / Leaded / 5.0 V / TAPE ON REEL / 1000 PCS 1.18 KG 35*35*7 CM |
| HY62UF16404E-DF55IDR | SK HYNIX/海力士 | 409 | 4,00 | SRAM / 256KX16 SRAM / BGA / -40°C~+85°C / Leaded / 2.7V~3.3V / TAPE ON REEL / 2000 PCS 1.0 KG |
| HY29F040AT-70 | SK HYNIX/海力士 | 215 | 24,10 | FLASH-NOR / 29F040 / TSOP-32 / 70 NS / 0°C~+70°C / Leaded / 5.0 V / TRAY / 1400 PCS 2.16 KG 17*19*35 CM |
| HY29F040AT-70 | SK HYNIX/海力士 | 209 | 28,65 | FLASH-NOR / 29F040 / TSOP-32 / 70 NS / 0°C~+70°C / Leaded / 5.0 V / TRAY / 1400 PCS 2.16 KG 17*19*35 CM |
| HY62V8400ALLT2-70 | SK HYNIX/海力士 | 49 | 3,14 | SRAM / 512KX8 SRAM / TSOP2(32) / 70 NS / Leaded / 3.3 V / TRAY / 865 PCS 2.4 KG 37*17*10 CM |
| GM71V16163CT-6DR | SK HYNIX/海力士 | 30 | 4,00 | DRAM / 1MX16 EDO / TSOP2(44/50) / 60 NS / 0°C~+70°C / Leaded / 3.3 V / TAPE ON REEL / 1000 PCS 1.4 KG 35*34*6 CM |
| GM71V17803CJ-6T | SK HYNIX/海力士 | 29 | 3,00 | DRAM / 2MX8 EDO / SOJ-28 / 0°C~+85°C / Leaded / 3.3 V / TAPE ON REEL / EOL / 1000 PCS 2.01 KG 36*36*7 CM |
| GM71V16163CT-6DR | SK HYNIX/海力士 | 24 | 3,00 | DRAM / 1MX16 EDO / TSOP2(44/50) / 60 NS / 0°C~+70°C / Leaded / 3.3 V / TAPE ON REEL / 1000 PCS 1.4 KG 35*34*6 CM |
| HY29F800BG-90 | SK HYNIX/海力士 | 23 | 2,99 | FLASH-NOR / 29F800 BOTTOM / SOP-44 / 90 NS / 0°C~+70°C / Leaded / 5.0 V / 500 PCS 2.16 KG 56*17*5 CM |
| GM71V16163CT-6DR | SK HYNIX/海力士 | 23 | 5,00 | DRAM / 1MX16 EDO / TSOP2(44/50) / 60 NS / 0°C~+70°C / Leaded / 3.3 V / TAPE ON REEL / 1000 PCS 1.4 KG 35*34*6 CM |
| HY29F800BG-70 | SK HYNIX/海力士 | 19 | 2,26 | FLASH-NOR / 29F800 BOTTOM / SOP-44 / 70 NS / 0°C~+70°C / Leaded / 5.0 V |
| GM71V16163CT-6DR | SK HYNIX/海力士 | 11 | 3,00 | DRAM / 1MX16 EDO / TSOP2(44/50) / 60 NS / 0°C~+70°C / Leaded / 3.3 V / TAPE ON REEL / 1000 PCS 1.4 KG 35*34*6 CM |
| GM71C16400CJ-6T | SK HYNIX/海力士 | 4 | 2,98 | DRAM / 4MX4 FP / 4K REFRESH / SOJ-24/26 / 0°C~+70°C / Leaded / 5.0 V / TAPE ON REEL / 1000 PCS 1.72 KG 36*36*7 CM |
| HY5117404BJ-60 | SK HYNIX/海力士 | 99 | 12,00 | DRAM / 4MX4 EDO / SOJ-24/26 / 60 NS / 0°C~+85°C / Leaded / 5.0 V |
| GM76V256CLLT-85 | SK HYNIX/海力士 | 9.720 | 10,20 | SRAM / 32KX8 SRAM / LOW LOW POWER / TSOP-28 / 85 NS / Leaded / 3.3 V / TRAY / 1000 PCS 2.32 KG 33*15*9 CM |
| HY638256T1-20 | SK HYNIX/海力士 | 9.640 | 3,55 | SRAM / 32KX8 SRAM / TSOP-28 / Leaded / 5.0 V / TRAY / 35*17*8 CM |
| HY638256T1-20 | SK HYNIX/海力士 | 9.636 | 2,12 | SRAM / 32KX8 SRAM / TSOP-28 / Leaded / 5.0 V / TRAY / 35*17*8 CM |
| HY638256T1-20 | SK HYNIX/海力士 | 9.644 | 13,83 | SRAM / 32KX8 SRAM / TSOP-28 / Leaded / 5.0 V / TRAY / 35*17*8 CM |
| HY638256T1-20 | SK HYNIX/海力士 | 9.650 | 2,18 | SRAM / 32KX8 SRAM / TSOP-28 / Leaded / 5.0 V / TRAY / 35*17*8 CM |
| A2C0169240000 A | SKYHIGH | 2.239 | 5,00 | FLASH-NAND / 1GX8 NAND SLC / TSOP-48 / 25 NS / -40°C~+85°C / RoHS / 3.3 V / TAPE ON REEL / 1000 PCS |
| S40FC004C1B1I00014 | SKYHIGH | 2.237 | 18,13 | FLASH-EMMC / 4GB EMMC / B1 = FBGA 153, 11.5 x 13 mm / FBGA-153 / 52 MHz / -40°C~+85°C / RoHS / 3.3 V / TRAY / 1710 PCS |
| S40FC004C1B1I00014 | SKYHIGH | 2.235 | 23,60 | FLASH-EMMC / 4GB EMMC / B1 = FBGA 153, 11.5 x 13 mm / FBGA-153 / 52 MHz / -40°C~+85°C / RoHS / 3.3 V / TRAY / 1710 PCS |
| S34ML01G200BHB000 | SKYHIGH | 2.229 | 14,65 | FLASH-NAND / 128MX8 NAND SLC / 00 = x8 NAND, single die B = Industrial Plus with AECQ-100 and GT Grade (-40˚C to +105˚C) / BGA-63 / 25 ns / -40°C~+105°C / RoHS / 3.3 V / TRAY / 960 PCS |
| S40FC004C1B1I00014 | SKYHIGH | 2.227 | 3,69 | FLASH-EMMC / 4GB EMMC / B1 = FBGA 153, 11.5 x 13 mm / FBGA-153 / 52 MHz / -40°C~+85°C / RoHS / 3.3 V / TRAY / 1710 PCS |
| S34ML08G301BHI100 | SKYHIGH | 2.217 | 2,81 | FLASH-NAND / 1GX8 NAND SLC / 01 = x8 NAND, dual die / BGA-63 / 25 ns / -40°C~+85°C / RoHS / 3.3 V / TRAY |
| S34ML01G200GHI003 | SKYHIGH | 2.212 | 125,00 | FLASH-NAND / 128MX8 NAND SLC / 8 × 6.5 × 1 MM (32 NM) / BGA-67 / 25 ns / -40°C~+85°C / RoHS / 3.3 V / TAPE ON REEL / EOL / 2500 PCS |
| S34MS02G200GHI000 | SKYHIGH | 2.208 | 10,00 | FLASH-NAND / 256MX8 NAND SLC / BGA-67 / 45 NS / -40°C~+85°C / RoHS / 1.8 V / TRAY / EOL / 90 PCS |
| S34MS02G200GHI000 | SKYHIGH | 2.207 | 15,30 | FLASH-NAND / 256MX8 NAND SLC / BGA-67 / 45 NS / -40°C~+85°C / RoHS / 1.8 V / TRAY / EOL / 90 PCS |
| S34MS01G200GHI000 | SKYHIGH | 2.206 | 16,43 | FLASH-NAND / 128MX8 NAND SLC / BGA-67 / 45 NS / -40°C~+85°C / RoHS / 1.8 V / TRAY / EOL / 2600 PCS |
| S34MS01G200TFI900 | SKYHIGH | 2.206 | 2,72 | FLASH-NAND / 128MX8 NAND SLC / TSOP-48 / 45 NS / -40°C~+85°C / RoHS / 1.8 V / TRAY / 960 PCS |
| S40FC002C1B2I00000 | SKYHIGH | 2.203 | 27,14 | FLASH-EMMC / 2GB EMMC / B2 = FBGA 153, 9.0 x 7.5 mm B2 = FBGA 153, 9.0 x 7.5 mm / FBGA-153 / 52 MHz / -40°C~+85°C / RoHS / 3.3 V / TRAY / 225 PCS |
| S40FC002C1B2I00000 | SKYHIGH | 2.201 | 18,00 | FLASH-EMMC / 2GB EMMC / B2 = FBGA 153, 9.0 x 7.5 mm B2 = FBGA 153, 9.0 x 7.5 mm / FBGA-153 / 52 MHz / -40°C~+85°C / RoHS / 3.3 V / TRAY / 225 PCS |
| S34ML01G100BHI003 | SKYHIGH | 2.151 | 4,60 | FLASH-NAND / 128MX8 NAND SLC / 00 = x8 NAND, single die / BGA-63 / 25 ns / -40°C~+85°C / RoHS / 3.3 V / TAPE ON REEL / 1000 PCS |
| S34ML02G200BHV000 | SKYHIGH | 2.151 | 12,60 | FLASH-NAND / 256MX8 NAND SLC / 00 = x8 NAND, single die 1 (4x nm) / BGA-63 / 25 ns / -40°C~+105°C / RoHS / 3.3 V / TRAY / 960 PCS |
| S34MS02G100BHI000 | SKYHIGH | 2.151 | 12,60 | FLASH-NAND / 256MX8 NAND SLC / BGA-63 / 45 NS / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2100 PCS |
| S34MS02G100BHI000 | SKYHIGH | 2.150 | 37,80 | FLASH-NAND / 256MX8 NAND SLC / BGA-63 / 45 NS / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2100 PCS |
| S34ML02G200BHV000 | SKYHIGH | 2.149 | 32,49 | FLASH-NAND / 256MX8 NAND SLC / 00 = x8 NAND, single die 1 (4x nm) / BGA-63 / 25 ns / -40°C~+105°C / RoHS / 3.3 V / TRAY / 960 PCS |
| S34MS08G201BHI020 | SKYHIGH | 2.146 | 36,67 | FLASH-NAND / 1GX8 NAND SLC / 2 = Revision 2 (32 nm) / BGA-63 / 45 NS / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2100 PCS |
| S34MS02G100BHI000 | SKYHIGH | 2.145 | 8,40 | FLASH-NAND / 256MX8 NAND SLC / BGA-63 / 45 NS / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2100 PCS |
| S34ML08G301TFI100 | SKYHIGH | 2.144 | 5,76 | FLASH-NAND / 1GX8 NAND SLC / 3 = REVISION 3 / TSOP-48 / 25 ns / -40°C~+85°C / RoHS / 3.3 V / TRAY / 960 PCS |
| S34MS04G204BHI010 | SKYHIGH | 2.143 | 2,05 | FLASH-NAND / 256MX16 NAND SLC / BGA-63 / 45 NS / -40°C~+85°C / RoHS / 1.8 V / TRAY / EOL |
| S34ML16G303TFV000 | SKYHIGH | 2.141 | 2,04 | FLASH-NAND / 2GX8 NAND SLC / TSOP-48 / 45 NS / -40 C~+105 C / RoHS / 3.3 V / TRAY / EOL |
| S34ML08G301TFI100 | SKYHIGH | 2.139 | 18,18 | FLASH-NAND / 1GX8 NAND SLC / 3 = REVISION 3 / TSOP-48 / 25 ns / -40°C~+85°C / RoHS / 3.3 V / TRAY / 960 PCS |
| S34MS02G100BHI000 | SKYHIGH | 2.139 | 14,98 | FLASH-NAND / 256MX8 NAND SLC / BGA-63 / 45 NS / -40°C~+85°C / RoHS / 1.8 V / TRAY / 2100 PCS |
| S34ML04G100TFI000 | SKYHIGH | 2.038 | 3,84 | FLASH-NAND / 512MX8 NAND SLC / 00 = x8 NAND, single die / TSOP-48 / 25 ns / -40°C~+85°C / RoHS / 3.3 V / TRAY / 960 PCS 2.5 KG 40*19*12 CM |
| S34ML08G101TFA003 | SKYHIGH | 1.911 | 5,00 | FLASH-NAND / 1GX8 NAND SLC / 01 = x8 NAND, dual die / TSOP-48 / 25 ns / -40°C~+85°C / RoHS / 3.3 V / TAPE ON REEL / 1000 PCS |
| S34ML04G100TFI000 | SKYHIGH | 1.824 | 9,60 | FLASH-NAND / 512MX8 NAND SLC / 00 = x8 NAND, single die / TSOP-48 / 25 ns / -40°C~+85°C / RoHS / 3.3 V / TRAY / 960 PCS 2.5 KG 40*19*12 CM |
| S34ML04G100TFI000 | SKYHIGH | 1.824 | 6,62 | FLASH-NAND / 512MX8 NAND SLC / 00 = x8 NAND, single die / TSOP-48 / 25 ns / -40°C~+85°C / RoHS / 3.3 V / TRAY / 960 PCS 2.5 KG 40*19*12 CM |
| S34ML02G200TFI000 | SKYHIGH | 1.823 | 22,08 | FLASH-NAND / 256MX8 NAND SLC / 00 = x8 NAND, single die 1 (4x nm) / TSOP-48 / 25 ns / -40°C~+85°C / RoHS / 3.3 V / TRAY / 960 PCS |
| S34ML02G100TFI000 | SKYHIGH | 1.805 | 4,80 | FLASH-NAND / 256MX8 NAND SLC / 00 = x8 NAND, single die 1 (4x nm) / TSOP-48 / 25 ns / -40°C~+85°C / RoHS / 3.3 V / TRAY / 960 PCS 2.36 KG 40*19*12 CM |
| S34ML02G200TFI000 | SKYHIGH | 1.746 | 3,84 | FLASH-NAND / 256MX8 NAND SLC / 00 = x8 NAND, single die 1 (4x nm) / TSOP-48 / 25 ns / -40°C~+85°C / RoHS / 3.3 V / TRAY / 960 PCS |
| S34ML02G100TFI000 | SKYHIGH | 1.744 | 17,28 | FLASH-NAND / 256MX8 NAND SLC / 00 = x8 NAND, single die 1 (4x nm) / TSOP-48 / 25 ns / -40°C~+85°C / RoHS / 3.3 V / TRAY / 960 PCS 2.36 KG 40*19*12 CM |
| S34ML02G100TFI000 | SKYHIGH | 1.742 | 7,68 | FLASH-NAND / 256MX8 NAND SLC / 00 = x8 NAND, single die 1 (4x nm) / TSOP-48 / 25 ns / -40°C~+85°C / RoHS / 3.3 V / TRAY / 960 PCS 2.36 KG 40*19*12 CM |
| S34ML02G100TFI000 | SKYHIGH | 1.742 | 7,40 | FLASH-NAND / 256MX8 NAND SLC / 00 = x8 NAND, single die 1 (4x nm) / TSOP-48 / 25 ns / -40°C~+85°C / RoHS / 3.3 V / TRAY / 960 PCS 2.36 KG 40*19*12 CM |
| S34ML02G100TFI000 | SKYHIGH | 1.737 | 7,68 | FLASH-NAND / 256MX8 NAND SLC / 00 = x8 NAND, single die 1 (4x nm) / TSOP-48 / 25 ns / -40°C~+85°C / RoHS / 3.3 V / TRAY / 960 PCS 2.36 KG 40*19*12 CM |
| S34ML02G100TFI000 | SKYHIGH | 1.734 | 7,68 | FLASH-NAND / 256MX8 NAND SLC / 00 = x8 NAND, single die 1 (4x nm) / TSOP-48 / 25 ns / -40°C~+85°C / RoHS / 3.3 V / TRAY / 960 PCS 2.36 KG 40*19*12 CM |
| S34ML02G200TFI000 | SKYHIGH | 1.734 | 3,84 | FLASH-NAND / 256MX8 NAND SLC / 00 = x8 NAND, single die 1 (4x nm) / TSOP-48 / 25 ns / -40°C~+85°C / RoHS / 3.3 V / TRAY / 960 PCS |
| S34ML02G100TFI000 | SKYHIGH | 1.731 | 3,84 | FLASH-NAND / 256MX8 NAND SLC / 00 = x8 NAND, single die 1 (4x nm) / TSOP-48 / 25 ns / -40°C~+85°C / RoHS / 3.3 V / TRAY / 960 PCS 2.36 KG 40*19*12 CM |
| S34ML02G100TFI000 | SKYHIGH | 1.725 | 3,84 | FLASH-NAND / 256MX8 NAND SLC / 00 = x8 NAND, single die 1 (4x nm) / TSOP-48 / 25 ns / -40°C~+85°C / RoHS / 3.3 V / TRAY / 960 PCS 2.36 KG 40*19*12 CM |
| 3005378 STC | STC/宏晶 | 2.243 | 10,00 | 3005378 / RoHS / 5000 PCS |
| STTH8L06D | STM/意法半导体 | 1.925 | 11,00 | RECTIFIER / 8L06 / TO-220AC-2 / 8 A / -40°C~+175°C / RoHS / 600 V / TUBE / 1000 PCS |
| STTH8L06D | STM/意法半导体 | 1.925 | 3,00 | RECTIFIER / 8L06 / TO-220AC-2 / 8 A / -40°C~+175°C / RoHS / 600 V / TUBE / 1000 PCS |
| BZW50-27 | STM/意法半导体 | 1.920 | 5,30 | DIODE / BZW50 / Through Hole / 1 MHZ / -65°C~+175°C / RoHS / 27 V / TAPE ON REEL |
| STTH3R06 | STM/意法半导体 | 1.919 | 33,60 | RECTIFIER / 3R06 / Through Hole / 3 A / -40°C~+175°C / RoHS / 600 V / TAPE ON REEL / 600 PCS |
| STTH3R06 | STM/意法半导体 | 1.918 | 15,60 | RECTIFIER / 3R06 / Through Hole / 3 A / -40°C~+175°C / RoHS / 600 V / TAPE ON REEL / 600 PCS |
| STTH8L06D | STM/意法半导体 | 1.918 | 19,00 | RECTIFIER / 8L06 / TO-220AC-2 / 8 A / -40°C~+175°C / RoHS / 600 V / TUBE / 1000 PCS |
| STTH8R04DI | STM/意法半导体 | 1.914 | 9,00 | RECOVERY DIODE / 8R04 / TO-220-3 / 120 A / -40°C~+175°C / RoHS / 400 V / TUBE / 1000 PCS |
| BZW50-27 | STM/意法半导体 | 1.910 | 4,30 | DIODE / BZW50 / Through Hole / 1 MHZ / -65°C~+175°C / RoHS / 27 V / TAPE ON REEL |
| STTH3R06 | STM/意法半导体 | 1.909 | 25,80 | RECTIFIER / 3R06 / Through Hole / 3 A / -40°C~+175°C / RoHS / 600 V / TAPE ON REEL / 600 PCS |
| STTH3R06 | STM/意法半导体 | 1.907 | 10,20 | RECTIFIER / 3R06 / Through Hole / 3 A / -40°C~+175°C / RoHS / 600 V / TAPE ON REEL / 600 PCS |
| SMAJ58AT/R | STM/意法半导体 | 1.907 | 35,00 | TVS/ESD / SMAJ58 / DO-214AC / 400 W / -65°C~+150°C / RoHS / 58V / TAPE ON REEL / 1000 PCS |
| SMAJ58AT/R | STM/意法半导体 | 1.906 | 435,00 | TVS/ESD / SMAJ58 / DO-214AC / 400 W / -65°C~+150°C / RoHS / 58V / TAPE ON REEL / 1000 PCS |
| SMAJ58AT/R | STM/意法半导体 | 1.905 | 155,00 | TVS/ESD / SMAJ58 / DO-214AC / 400 W / -65°C~+150°C / RoHS / 58V / TAPE ON REEL / 1000 PCS |
| SMAJ58AT/R | STM/意法半导体 | 1.905 | 4,99 | TVS/ESD / SMAJ58 / DO-214AC / 400 W / -65°C~+150°C / RoHS / 58V / TAPE ON REEL / 1000 PCS |
| STTH8L06D | STM/意法半导体 | 1.903 | 29,00 | RECTIFIER / 8L06 / TO-220AC-2 / 8 A / -40°C~+175°C / RoHS / 600 V / TUBE / 1000 PCS |
| STTH3R06 | STM/意法半导体 | 1.902 | 12,00 | RECTIFIER / 3R06 / Through Hole / 3 A / -40°C~+175°C / RoHS / 600 V / TAPE ON REEL / 600 PCS |
| SMA6J6.0CA-TR | STM/意法半导体 | 1.902 | 160,00 | TVS/ESD / SMA6J6 / SMA-2 / 600 W / -55°C~+175°C / RoHS / 5.0V~85V / TAPE ON REEL / 5000 PCS |
| BZW50-27 | STM/意法半导体 | 1.849 | 2,90 | DIODE / BZW50 / Through Hole / 1 MHZ / -65°C~+175°C / RoHS / 27 V / TAPE ON REEL |
| 1,5KE27A | STM/意法半导体 | 1.849 | 16,80 | DIODE / 15KE27 / DO-201-2 / 1500 W / -55°C~+175°C / RoHS / 23.1 V / TAPE ON REEL / 1200 PCS |
| TS274CDT | STM/意法半导体 | 1.849 | 50,00 | OP AMPS / TS274 / SOIC-14 / 3.5 MHz / 0°C~+70°C / RoHS / 3.0V~16V / TAPE ON REEL / 2500 PCS |
| TS274CDT | STM/意法半导体 | 1.848 | 45,00 | OP AMPS / TS274 / SOIC-14 / 3.5 MHz / 0°C~+70°C / RoHS / 3.0V~16V / TAPE ON REEL / 2500 PCS |
| 1,5KE27A | STM/意法半导体 | 1.847 | 21,00 | DIODE / 15KE27 / DO-201-2 / 1500 W / -55°C~+175°C / RoHS / 23.1 V / TAPE ON REEL / 1200 PCS |
| STTH2L06 | STM/意法半导体 | 1.846 | 122,00 | DIODE / 2L06 / DO-41 / 2 A / -55°C~+175°C / RoHS / 600 V / TAPE ON REEL / 2000 PCS |
| 1,5KE27A | STM/意法半导体 | 1.844 | 5,40 | DIODE / 15KE27 / DO-201-2 / 1500 W / -55°C~+175°C / RoHS / 23.1 V / TAPE ON REEL / 1200 PCS |
| TSX712IYDT | STM/意法半导体 | 1.842 | 15,00 | AMPLIFIER / TSX712 / SO-8 / 2.7 MHZ / -40°C~+125°C / RoHS / 16 V / TAPE ON REEL / 2500 PCS |
| TS321AIYLT | STM/意法半导体 | 1.841 | 30,00 | OP AMPS / TS321 / SOT-23-5 / 800 KHz / -40°C~+125°C / RoHS / 3.0V~30V / TAPE ON REEL / 3000 PCS |
| TS321AIYLT | STM/意法半导体 | 1.841 | 3,00 | OP AMPS / TS321 / SOT-23-5 / 800 KHz / -40°C~+125°C / RoHS / 3.0V~30V / TAPE ON REEL / 3000 PCS |
| TSX712IYDT | STM/意法半导体 | 1.836 | 7,50 | AMPLIFIER / TSX712 / SO-8 / 2.7 MHZ / -40°C~+125°C / RoHS / 16 V / TAPE ON REEL / 2500 PCS |
| TSX712IYDT | STM/意法半导体 | 1.836 | 2,50 | AMPLIFIER / TSX712 / SO-8 / 2.7 MHZ / -40°C~+125°C / RoHS / 16 V / TAPE ON REEL / 2500 PCS |
| TSX712IYDT | STM/意法半导体 | 1.835 | 12,50 | AMPLIFIER / TSX712 / SO-8 / 2.7 MHZ / -40°C~+125°C / RoHS / 16 V / TAPE ON REEL / 2500 PCS |
| TS321AIYLT | STM/意法半导体 | 1.831 | 12,00 | OP AMPS / TS321 / SOT-23-5 / 800 KHz / -40°C~+125°C / RoHS / 3.0V~30V / TAPE ON REEL / 3000 PCS |
| TS924IYPT | STM/意法半导体 | 1.823 | 2,50 | OP AMPS / TS924 / TSSOP-14 / 4 MHz / -40°C~+125°C / RoHS / 2.7V~12V / TAPE ON REEL / 2500 PCS |
| TS924IYPT | STM/意法半导体 | 1.822 | 7,50 | OP AMPS / TS924 / TSSOP-14 / 4 MHz / -40°C~+125°C / RoHS / 2.7V~12V / TAPE ON REEL / 2500 PCS |
| TS321AIYLT | STM/意法半导体 | 1.821 | 3,00 | OP AMPS / TS321 / SOT-23-5 / 800 KHz / -40°C~+125°C / RoHS / 3.0V~30V / TAPE ON REEL / 3000 PCS |
| TS924IYPT | STM/意法半导体 | 1.805 | 22,50 | OP AMPS / TS924 / TSSOP-14 / 4 MHz / -40°C~+125°C / RoHS / 2.7V~12V / TAPE ON REEL / 2500 PCS |
| M27C801-100K1 (ROHS) | STM/意法半导体 | 1.215 | 4,72 | OTPROM / 27C080 / PLCC-32 / 80 MHZ / 0°C~+70°C / RoHS / 5.0 V / TUBE / EOL / 320 PCS |
| M27C1001-45XB1(ROHS) | STM/意法半导体 | 1.142 | 5,04 | EPROM / 27C010 / PDIP-28 / 45 NS / 0°C~+70°C / RoHS / 5.0 V / TUBE / EOL / 360 PCS |
| M27C1001-45XB1(ROHS) | STM/意法半导体 | 1.141 | 2,52 | EPROM / 27C010 / PDIP-28 / 45 NS / 0°C~+70°C / RoHS / 5.0 V / TUBE / EOL / 360 PCS |
| M27C160100F1(ROHS) | STM/意法半导体 | 1.124 | 7,38 | EPROM / 27C160 / CDIP-28 / 100 NS / 0°C~+70°C / RoHS / 5.0 V / TUBE / EOL / 180 PCS |
| M27C160100F1(ROHS) | STM/意法半导体 | 1.121 | 8,64 | EPROM / 27C160 / CDIP-28 / 100 NS / 0°C~+70°C / RoHS / 5.0 V / TUBE / EOL / 180 PCS |
| M27C1001-10F1(ROHS) | STM/意法半导体 | 1.105 | 3,55 | EPROM / 27C010 / CDIP-28 / 100 NS / 0°C~+70°C / RoHS / 5.0 V / TUBE / EOL / 240 PCS 3.1 KG 55*9*7 CM |
| M27C2001-10F1(ROHS) | STM/意法半导体 | 1.048 | 2,88 | EPROM / 27C020 / CDIP-32 / 100 NS / 0°C~+70°C / RoHS / 5.0 V / TUBE / EOL / 240 PCS 3.0 KG 55*9*7 CM |
| M27C160100F1(ROHS) | STM/意法半导体 | 1.041 | 4,14 | EPROM / 27C160 / CDIP-28 / 100 NS / 0°C~+70°C / RoHS / 5.0 V / TUBE / EOL / 180 PCS |
| M28W320CT-90N6 | STM/意法半导体 | 419 | 14,97 | FLASH-NOR / 28W320 / T = Top Boot / TSOP-48 / 90 NS / -40°C~+85°C / Leaded / 2.7V~3.6V / TRAY / EOL / 576 PCS 1.67 KG 40*20*11 CM |
| M28W320CT-90N6 | STM/意法半导体 | 415 | 3,46 | FLASH-NOR / 28W320 / T = Top Boot / TSOP-48 / 90 NS / -40°C~+85°C / Leaded / 2.7V~3.6V / TRAY / EOL / 576 PCS 1.67 KG 40*20*11 CM |
| M24128-MN6T | STM/意法半导体 | 230 | 2,50 | EEPROM / 24C128 / SO8 / Leaded / 5.0 V / TAPE ON REEL / 2500 PCS |
| STI3520LCV | STM/意法半导体 | 221 | 2,16 | DECODER / STI3520 / PQFP-160 / Leaded / TRAY / 240 PCS 2.0 KG 39*9*3,5 CM |
| M36DR232A120ZA6T | STM/意法半导体 | 113 | 13,50 | MMP (FLASH + SRAM) / 32MF+2MS / LFBGA-66 / 100 NS / -40°C~+85°C / Leaded / 1.65V~2.2V / TAPE ON REEL / 1500 PCS 1.2 KG 35*35*4 CM |
| M36DR232A120ZA6T | STM/意法半导体 | 112 | 15,00 | MMP (FLASH + SRAM) / 32MF+2MS / LFBGA-66 / 100 NS / -40°C~+85°C / Leaded / 1.65V~2.2V / TAPE ON REEL / 1500 PCS 1.2 KG 35*35*4 CM |
| M36DR232A120ZA6T | STM/意法半导体 | 111 | 18,00 | MMP (FLASH + SRAM) / 32MF+2MS / LFBGA-66 / 100 NS / -40°C~+85°C / Leaded / 1.65V~2.2V / TAPE ON REEL / 1500 PCS 1.2 KG 35*35*4 CM |
| M24128-WMN6T | STM/意法半导体 | 30 | 4,99 | EEPROM / 24C128 / SO8 / Leaded / 5.0 V / TAPE ON REEL / 2500 PCS 0.0 KG 5*5*3,5 CM |
| M28F201-70K1 | STM/意法半导体 | 25 | 2,87 | FLASH-NOR / 28F020 / PLCC / Leaded / TUBE / 320 PCS 0.6 KG |
| M24128-WMN6T | STM/意法半导体 | 10 | 2,50 | EEPROM / 24C128 / SO8 / Leaded / 5.0 V / TAPE ON REEL / 2500 PCS 0.0 KG 5*5*3,5 CM |
| M24128-WMN6T | STM/意法半导体 | 3 | 5,00 | EEPROM / 24C128 / SO8 / Leaded / 5.0 V / TAPE ON REEL / 2500 PCS 0.0 KG 5*5*3,5 CM |
| CDRH125-101MC | SUMIDA/胜美达 | 98 | 4,00 | INDUCTOR / SDRF125 / Leaded |
| B72214S301K101 | TDK/應美盛 | 1.102 | 3,00 | RESISTOR / 72214S301 / RoHS / 500 PCS |
| SK050M2R10ST6 | TEAPO G LUXON | 98 | 30,00 | OTHER / 50M2R10 / Leaded |
| TPS3809K33DBVR | TEXAS/TI/德仪 | 1.806 | 24,00 | SUPERVISOR / TPS3809 / SOT-23-3 / 9 uA / -40°C~+85°C / RoHS / 2.93V / TAPE ON REEL / 3000 PCS |
| TPS3809K33DBVR | TEXAS/TI/德仪 | 1.805 | 30,00 | SUPERVISOR / TPS3809 / SOT-23-3 / 9 uA / -40°C~+85°C / RoHS / 2.93V / TAPE ON REEL / 3000 PCS |
| TPS3809K33DBVR | TEXAS/TI/德仪 | 1.802 | 3,00 | SUPERVISOR / TPS3809 / SOT-23-3 / 9 uA / -40°C~+85°C / RoHS / 2.93V / TAPE ON REEL / 3000 PCS |
| TP3040J | TEXAS/TI/德仪 | 9.837 | 5,93 | MONOLITHICS / TP3040 / DIP / Leaded / TUBE / 1500 PCS |
| TLP181 | TOSHIBA/東芝 | 618 | 9,00 | OPTOCOUPLER / tlp181 / Leaded |
| TC554001AFI-70L | TOSHIBA/東芝 | 405 | 2,80 | SRAM / 512KX8 SRAM / SOP-32 / 70 NS / Leaded / 5.0 V |
| TC551001CFI-85L | TOSHIBA/東芝 | 9 | 3,00 | SRAM / 128KX8 SRAM / SOP-32 / 85 NS / -40°C~+85°C / Leaded / 5.0 V |
| 3-822499-3 | TYCO/泰科 | 122 | 4,98 | CONNECTOR / 822499 / Leaded |
| 338366-1 | TYCO/泰科 | 0 | 3,60 | CONNECTOR / 338366 / Leaded |
| MC1SDCF-CL1 | UNKNOWN | 7 | 3,70 | OTHER / MC1SDCF / Leaded |
| EGF1T-E3/67A | VISHAY/威世 | 1.825 | 36,00 | RECTIFIER / 1TE367 / DO-214BA / 1 A / -55°C~+150°C / RoHS / 1300 V / TAPE ON REEL / 1500 PCS |
| EGF1T-E3/67A | VISHAY/威世 | 1.823 | 37,50 | RECTIFIER / 1TE367 / DO-214BA / 1 A / -55°C~+150°C / RoHS / 1300 V / TAPE ON REEL / 1500 PCS |
| EGF1T-E3/67A | VISHAY/威世 | 1.822 | 6,00 | RECTIFIER / 1TE367 / DO-214BA / 1 A / -55°C~+150°C / RoHS / 1300 V / TAPE ON REEL / 1500 PCS |
| EGF1T-E3/67A | VISHAY/威世 | 1.817 | 18,00 | RECTIFIER / 1TE367 / DO-214BA / 1 A / -55°C~+150°C / RoHS / 1300 V / TAPE ON REEL / 1500 PCS |
| EGF1T-E3/67A | VISHAY/威世 | 1.815 | 9,00 | RECTIFIER / 1TE367 / DO-214BA / 1 A / -55°C~+150°C / RoHS / 1300 V / TAPE ON REEL / 1500 PCS |
| MD5832-D256-V3Q18-X-P | WD/WESTERN-DIGITAL/西部數據 | 620 | 5,00 | FLASH-DISK ON CHIP / 32MB DOC / FBGA-85 / 55 NS / -40°C~+85°C / RoHS / 3.3 V / TAPE ON REEL / 1000 PCS 0.82 KG 35*35*5 CM |
| MD5832-D256-V3Q18-X-P | WD/WESTERN-DIGITAL/西部數據 | 613 | 8,00 | FLASH-DISK ON CHIP / 32MB DOC / FBGA-85 / 55 NS / -40°C~+85°C / RoHS / 3.3 V / TAPE ON REEL / 1000 PCS 0.82 KG 35*35*5 CM |
| MD5832-D256-V3Q18-X-P | WD/WESTERN-DIGITAL/西部數據 | 612 | 3,00 | FLASH-DISK ON CHIP / 32MB DOC / FBGA-85 / 55 NS / -40°C~+85°C / RoHS / 3.3 V / TAPE ON REEL / 1000 PCS 0.82 KG 35*35*5 CM |
| MD5832-D256-V3Q18-X-P/Y | WD/WESTERN-DIGITAL/西部數據 | 611 | 42,00 | FLASH-DISK ON CHIP / 32MB DOC / FBGA-85 / 55 NS / -40°C~+125°C / RoHS / 3.3 V / TRAY / 1000 PCS 1.22 KG 37*17*5 CM |
| MD5832-D256-V3Q18-X-P | WD/WESTERN-DIGITAL/西部數據 | 611 | 24,14 | FLASH-DISK ON CHIP / 32MB DOC / FBGA-85 / 55 NS / -40°C~+85°C / RoHS / 3.3 V / TAPE ON REEL / 1000 PCS 0.82 KG 35*35*5 CM |
| MD5832-D256-V3Q18-X-P | WD/WESTERN-DIGITAL/西部數據 | 610 | 8,20 | FLASH-DISK ON CHIP / 32MB DOC / FBGA-85 / 55 NS / -40°C~+85°C / RoHS / 3.3 V / TAPE ON REEL / 1000 PCS 0.82 KG 35*35*5 CM |
| MD3831-D16-V3Q18-X | WD/WESTERN-DIGITAL/西部數據 | 417 | 2,13 | FLASH-DISK ON CHIP / 16MB DOC / FBGA / Leaded / TAPE ON REEL / 1000 PCS 0.9 KG 35*35*5 CM |
| MD3331-D64-V3-X-P | WD/WESTERN-DIGITAL/西部數據 | 335 | 4,02 | FLASH-DISK ON CHIP / 64MB DOC / FBGA / -40°C~+125°C / RoHS / TAPE ON REEL / 1000 PCS |
| SK050M0010RT0 | YAGEO/國巨 | 0 | 18,20 | CAPACITOR / 050M0010 / Leaded |
| SK050M0R22AE1 | YAGEO/國巨 | 99 | 8,00 | OTHER / 050M0 / Leaded |
| SS050M2R20AA1 | YAGEO/國巨 | 98 | 65,00 | CAPACITOR / 050M2R20 / Leaded |
